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    onsemi MBRS130T3G

    DIODE SCHOTTKY 30V 1A SMB
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    DigiKey MBRS130T3G Digi-Reel 26,644 1
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    MBRS130T3G Reel 25,000 2,500
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    Vishay Semiconductors VS-MBRS130L-M3-5BT

    DIODE SCHOTTKY 30V 1A DO214AA
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    DigiKey VS-MBRS130L-M3-5BT Digi-Reel 23,687 1
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    VS-MBRS130L-M3-5BT Cut Tape 23,687 1
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    VS-MBRS130L-M3-5BT Reel 22,400 3,200
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    onsemi MBRS130LT3G

    DIODE SCHOTTKY 30V 2A SMB
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    DigiKey MBRS130LT3G Digi-Reel 18,145 1
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    MBRS130LT3G Cut Tape 18,145 1
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    MBRS130LT3G Reel 18,000 2,500
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    MBRS130LT3G Ammo Pack 9 Weeks, 2 Days 1
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    Vishay Semiconductors VS-MBRS130-M3-5BT

    DIODE SCHOTTKY 30V 1A DO214AA
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    DigiKey VS-MBRS130-M3-5BT Digi-Reel 2,889 1
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    VS-MBRS130-M3-5BT Cut Tape 2,889 1
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    onsemi MBRS130

    DIODE SCHOTTKY 30V 1A DO214AA
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    MBRS130 Digi-Reel 1
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    MBRS130 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBRS130 Fairchild Semiconductor 1.0 Ampere Schottky Power Rectifiers Original PDF
    MBRS130 Motorola Schottky Power Rectifier(Surface Mount Power Package) Original PDF
    MBRS130 On Semiconductor 1A 30V Schottky Rectifier Original PDF
    MBRS130L Fairchild Semiconductor Schottky Rectifier Original PDF
    MBRS130L Fairchild Semiconductor 1.0 Ampere Schottky Power Rectifiers Original PDF
    MBRS130L Fairchild Semiconductor 1.0 Ampere Schottky Power Rectifiers Original PDF
    MBRS130L Fairchild Semiconductor SCHOTTKY POWER RECTIFIER Original PDF
    MBRS130L Fairchild Semiconductor SCHOTTKY POWER RECTIFIER Scan PDF
    MBRS130L_NL Fairchild Semiconductor 1.0 Ampere Schottky Power Rectifiers Original PDF
    MBRS130LT3 EIC Semiconductor Schottky Barrier Rectifiers Original PDF
    MBRS130LT3 Motorola Silicon Diode Original PDF
    MBRS130LT3 On Semiconductor Schottky Power Rectifier Original PDF
    MBRS130LT3 On Semiconductor 1A 30V Low Vf Schottky Rectifier; Package: SMB; No of Pins: 2; Container: Tape and Reel; Qty per Container: 2500 Original PDF
    MBRS130LT3 ON Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 2A SMB Original PDF
    MBRS130LT3 On Semiconductor MBRS130 - DIODE 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AA, PLASTIC, CASE 403A-03, SMB, 2 PIN, Rectifier Diode Original PDF
    MBRS130LT3/D On Semiconductor 1.0 AMPERE 30 VOLTS Original PDF
    MBRS130LT3/D On Semiconductor 1.0 AMPERE 30 VOLTS Original PDF
    MBRS130LT3-D On Semiconductor Schottky Power Rectifier Surface Mount Power Packa Original PDF
    MBRS130LT3G On Semiconductor 1A 30V Low Vf Schottky Rectifier Original PDF
    MBRS130LT3G On Semiconductor 1A 30V Low Vf Schottky Rectifier; Package: SMB; No of Pins: 2; Container: Tape and Reel; Qty per Container: 2500 Original PDF

    MBRS130 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN-994

    Abstract: MBRS130TR
    Text: Bulletin PD-20584 rev. D 03/03 MBRS130TR SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics Characteristics Description/ Features MBRS130TR Units The MBRS130TR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small


    Original
    PD-20584 MBRS130TR MBRS130TR AN-994 PDF

    403A-03

    Abstract: MBRS130LT3 CASE 403A MBRS130LT3 marking
    Text: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metal–to–silicon


    Original
    MBRS130LT3/D MBRS130LT3 403A-03 MBRS130LT3 CASE 403A MBRS130LT3 marking PDF

    marking B13 diode SCHOTTKY

    Abstract: No abstract text available
    Text: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS130T3 marking B13 diode SCHOTTKY PDF

    diode 1bl3

    Abstract: 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3
    Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS130LT3 diode 1bl3 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-20588 rev. A 09/01 MBRS130LTR 1 Amp SCHOTTKY RECTIFIER SMB Description/Features Major Ratings and Characteristics Characteristics MBRS130LTR Units The MBRS130LTR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small


    Original
    PD-20588 MBRS130LTR MBRS130LTR PDF

    MBRS130LTRPBF

    Abstract: AN-994
    Text: Bulletin PD-20403 07/04 MBRS130LTRPbF SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0 Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Value Units IF(AV) Rectangular waveform 1.0 A VRRM 30 V IFSM @ tp= 5 µs sine 230 A VF @ 1.0Apk, TJ= 125°C


    Original
    PD-20403 MBRS130LTRPbF MBRS130LTRPbF 12-Mar-07 AN-994 PDF

    AN-994

    Abstract: No abstract text available
    Text: Bulletin PD-20436 07/04 MBRS130TRPbF SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0 Amp VR = 30V Major Ratings and Characteristics Description/ Features Characteristics Value Units IF(AV) Rectangular waveform 1.0 A VRRM 30 V IFSM @ tp= 5 µs sine 230 A 0.42 V - 55 to 125


    Original
    PD-20436 MBRS130TRPbF MBRS130TRPbF 12-Mar-07 AN-994 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-MBRS130-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable Cathode • Very low forward voltage drop Anode • High frequency operation • Guard ring for enhanced ruggedness and long


    Original
    VS-MBRS130-M3 J-STD-020, VS-MBRS130-M3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    mic29152bu

    Abstract: 118k 100uF 10v MIC29152 transistor c111 C105 Diode transistor c106 transistor C110 22uf 350v C106
    Text: 3.3V and 2.7V Palm-Top Supply • • • • VSOURCE C105 22uF 35V + C142 0.1uF R84 10.0k 1% R85 20.0k 1% 1,2,9 20 11 R87 SUSPDIS SW VCC3 D3 MBRS130L Sync FB 4-7 R86 33.2k 1% + C107 100uF 10V 12 R89 20.0k 1% 2 R142 2M 19 14-17 13 Input R88 10k 1% PGND Bias


    Original
    MBRS130L 100uF MIC2178 MIC2178BWM 200kHz 600uA MIC29152 6800pF MIC29152BU mic29152bu 118k 100uF 10v MIC29152 transistor c111 C105 Diode transistor c106 transistor C110 22uf 350v C106 PDF

    403A-03

    Abstract: MBRS130T3 MBRS130T3G
    Text: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS130T3 403A-03 MBRS130T3 MBRS130T3G PDF

    SMB MARKING mj

    Abstract: Diode SMB marking code 14
    Text: Bulletin PD-20584 rev. E 07/04 MBRS130TR SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0 Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Value Units IF(AV) Rectangular waveform 1.0 A VRRM 30 V IFSM @ tp= 5 µs sine 230 A VF @ 1.0Apk, TJ= 125°C


    Original
    PD-20584 MBRS130TR MBRS130TR SMB MARKING mj Diode SMB marking code 14 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-20588 rev. C 05/02 MBRS130LTR 1 Amp SCHOTTKY RECTIFIER SMB Description/Features Major Ratings and Characteristics Characteristics MBRS130LTR Units The MBRS130LTR surface-mount Schottky rectifier has been designed for applications requiring low forward drop


    Original
    PD-20588 MBRS130LTR MBRS130LTR IR13L PDF

    1bl3

    Abstract: diode 1bl3 MBRS130LT3 on 1bl3 MBRS130LT3G Micro-D
    Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS130LT3 MBRS130LT3/D 1bl3 diode 1bl3 MBRS130LT3 on 1bl3 MBRS130LT3G Micro-D PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-MBRS130LTRPbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable • Very low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode


    Original
    VS-MBRS130LTRPbF J-STD-020, 2002/95/EC VS-MBRS130LTRPbF 11-Mar-11 PDF

    1BL3 marking code

    Abstract: MBRS130LT3G SBRS8130LT3G 1bl3 diode MBRS130LT 1BL3
    Text: MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS130LT3G, SBRS8130LT3G MBRS130LT3/D 1BL3 marking code MBRS130LT3G 1bl3 diode MBRS130LT 1BL3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBRS130L MBRS130L Features • Compact surface mount package with J-bend leads. • 1.5 Watt Power Dissipation package. • 1.0 Ampere, forward voltage less than 395 mv. SMB/DO-214AA Color Band Denotes Cathode Mark: 1BL3 Schottky Rectifiers Absolute Maximum Ratings*


    Original
    MBRS130L SMB/DO-214AA PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-MBRS130LTRPbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable • Very low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode


    Original
    VS-MBRS130LTRPbF J-STD-020, 2002/95/EC VS-MBRS130LTRPbF 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-20584 rev. E 07/04 MBRS130TR SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0 Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Value Units IF(AV) Rectangular waveform 1.0 A VRRM 30 V IFSM @ tp= 5 µs sine 230 A VF @ 1.0Apk, TJ= 125°C


    Original
    PD-20584 MBRS130TR MBRS130TR 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-20403 07/04 MBRS130LTRPbF SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0 Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Value Units IF(AV) Rectangular waveform 1.0 A VRRM 30 V IFSM @ tp= 5 µs sine 230 A VF @ 1.0Apk, TJ= 125°C


    Original
    PD-20403 MBRS130LTRPbF MBRS130LTRPbF 08-Mar-07 PDF

    AN-994

    Abstract: MBRS130LTR
    Text: Bulletin PD-20588 rev. D 03/03 MBRS130LTR SCHOTTKY RECTIFIER 1 Amp SMB Description/ Features Major Ratings and Characteristics Characteristics MBRS130LTR Units IF AV Rectangular waveform 1.0 A VRRM 30 V IFSM @ tp= 5 µs sine 230 A VF @ 1.0Apk, TJ= 125°C


    Original
    PD-20588 MBRS130LTR MBRS130LTR IR13L AN-994 PDF

    AN-994

    Abstract: MBRS130LTR
    Text: Bulletin PD-20588 rev. B 02/02 MBRS130LTR 1 Amp SCHOTTKY RECTIFIER SMB Description/Features Major Ratings and Characteristics Characteristics MBRS130LTR Units The MBRS130LTR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small


    Original
    PD-20588 MBRS130LTR MBRS130LTR AN-994 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-20584 rev. C 05/02 MBRS130TR SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics Characteristics Description/Features MBRS130TR Units The MBRS130TR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small


    Original
    PD-20584 MBRS130TR MBRS130TR PDF

    Untitled

    Abstract: No abstract text available
    Text: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS130T3 MBRS130T3/D PDF

    1bl3

    Abstract: No abstract text available
    Text: MBRS130L PA.RCH.LD s e m i c o n d u c t o r Tm DISCRETt ECH°nW0 L 0 “ eSSIGNAL SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high


    OCR Scan
    MBRS130L 1bl3 PDF