MC424

Abstract: TWT Wiring MC400 MC474 MC524 MC574
Contextual Info: D U A L J-K F L IP -F L O P C O M M O N C L O C K \ MTTL I MC500/400 series MC524 . MC574 MC424 • MC474 » <'F) OUTPUT DRIVE CLOCK MCS 24 MCS?« MC 434 MC 474 Since these flip -flo p s are charge-storage devices, there is a restriction on th e clock fall tim e th at must be observed.

MC424

Abstract: MC524 MC574 mc400 mc474 MC600 MC674 kd28
Contextual Info: d u a l j- K f l i p - f l o p C O M M O N C L O C K \ M T T L I MC500/400 series • MC524 . MC574 MC424 • MC474 m emory when the clock goes to the high state. When the clock returns low, the information is transferred to the bi­ stable section and the Q and 3 outputs. The information on

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-424LFG641 3.3 V OPERATION 4M -W ORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424LFG641F and MC-424LFG641FW are a 4,194,304 words by 64 bits dynamic RAM modules on which

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-424LFC721 3.3 V OPERATION 4M-WORD BY 72-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424LFC721F and M C-424LFC721FW are a 4,194,304 words by 72 bits dynamic RAM modules on which

Contextual Info: i l 1992 MC-424000A36 4,194,304 X 36-Bit Dynamic CMOS RAM Module LlMJ W NEC Electronics Inc. Preliminary Information August 1992 _ Description Pin Configuration The MC-424000A36 is a fast-page dynamic RAM mod­ ule organized as 4,194,304 words by 36 bits and de­

Contextual Info: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-424LFC72 3.3 V OPERATION 4M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The MC-424LFC72FY and M C-424LFC72FW are 4,194,304 words by 72 bits dynamic RAM modules on which 5

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-424000AB72F 4 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-424000AB72F is a 4,194,304 w ords by 72 bits dynam ic RAM m odule on which 18 pieces o f 16 M DRAM: /¿PD4217400 are assembled.

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-424LFG641 3.3 V OPERATION 4M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424LFG641F and M C-424LFG641FW are a 4,194,304 words by 64 bits dynam ic RAM modules on which

MC-424000F32B-60

Contextual Info: PRELIMINARY DATA SHEET CMOS INTEGRATED CIRCUIT JEC / MC-424000F32 4 M-WORD BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-424000F32 is a 4,194,304 words by 32 bits dynamic RAM module on which 8 pieces of 16M DRAM: jiPD4217405 are assembied.

Contextual Info: SEC NEC Electronics Inc. MC-424256A36BH/FH 262,144 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-424256A36BH/FH is a fast-page dynamic RAM module organized as 262,144 words by 36 bits and designed to operate from a single + 5-volt power sup­

MC-424000A8BA-60

Abstract: MC-424000A8
Contextual Info: NEC Electronics Inc. Description MC-424000A8 4,194,304 X 8-Bit Dynamic CMOS RAM Module Pin Configuration The MC-424000A8 is a fast-page 4,194,304-word by 8-bit dynamic RAM module designed to operate from a single +5-volt power supply. Advanced CMOS cir­ cuitry, including a single-transistor storage cell, multi­

HYM536410AM70

Abstract: KMM5364103AK-6 KMM53632000AKA-60 KMM53632000AK-6U KMM5364103AK-70 KMM53632000AK6 KMM5362003C-60 4MX36 KMM53616000AK 16MX36
Contextual Info: Page 1 12/09/97 AP450GX MP Server System 12/9/97 The following tables list SIMM/DIMM devices known to be compatible with the specified Intel platforms. In general, SIMM devices, which are faster than those specified for a given platform, will work although no extra performance will be realized. The memory devices

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

424256

Abstract: nec 424256 upd42256 424256 memory JRC 062 062 JRC 42256 41256 dram NEC 421000 mC 421000
Contextual Info: SEC M C -42512A 36, -424512A 36 524,288 X 36-B it D ynam ic CM OS RAM Module NEC Electronics Inc. Prelim inary Information A p ril 1992 Description Pin Configuration T h e M C -4 2 5 1 2 A 3 6 a n d th e M C -4 2 4 5 1 2 A 3 6 a re d y n a m ic RAM m o d u le s o rg a n iz e d as 5 2 4 ,2 8 8 w o rd s by 3 6 bits

4001BC

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-424FC721 4M-WORD BY 72-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424FC721 is a 4,194,304 words by 72 bits dynamic RAM module on which 18 pieces of 16 M DRAM : µPD4216405 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-424LFC72 3.3 V OPERATION 4M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The MC-424LFC72FY and MC-424LFC72FW are 4,194,304 words by 72 bits dynamic RAM modules on which 5 pieces of 64M DRAM µPD4265165 , and 4 pieces of 64M DRAM (µPD4265165) and 2 pieces of 16M DRAM

upd4216400

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-424000AC72F 4 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-424000AC72F is a 4,194,304 words by 72 bits dynamic RAM module on which 18 pieces of 16 M DRAM: µPD4216400 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the

Contextual Info: N E C ELECTRONICS INC blE D • L427S2S D0344[]fl Sib ■ NECE MC-424000A36 4,194,304 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configuration The M C-424000A36 is a fast-page dynam ic RAM mod­ ule organized as 4,194,304 words by 36 bits and de­

Contextual Info: NEC NEC Electronics Inc. MC-424512A36BH/FH 524,288 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-42512A36BH/FH is a fast-page dynamic RAM module organized as 524,288 words by 36 bits and designed to operate from a single + 5-volt power sup­

Nec K 872

Contextual Info: NEC MC-424512A36 524,288 X 36-Bit Dynamic RAM Module NEC Electronics Inc. Description Pin Configuration The M C-424512A36 is a page mode dynamic RAM module organized as 524,288 words by 36 bits and designed to operate from a single + 5-volt power sup­ ply. Advanced circuitry ensures minimum power dissi­

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-424000AB72F 4 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC D escription The MC-424000AB72F is a 4,194,304 w ords by 72 bits dynam ic RAM m odule on w hich 18 pieces o f 16 M DRAM: /¿PD4217400 are assembled.

CI 4001

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-424000AB72F 4 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC D escription The MC-424000AB72F is a 4,194,304 w ords by 72 bits dynam ic RAM m odule on w hich 18 pieces o f 16 M DRAM: /JPD4217400 are assembled.

SIMM 30-pin

Contextual Info: MC-424100A8 4,194,304 X 8-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A8 is a fast-page 4,194,304-word by 8-bit 30-Pin Leaded SIMM dynam ic RAM module designed to operate from a single + 5-volt power supply. Advanced CMOS cir­

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-424000AC72F 4 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-424000AC72F is a 4,194,304 words by 72 bits dynamic RAM module on which 18 pieces of 16 M DRAM: /iPD4216400 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the