MX0912B350Y
Abstract: No abstract text available
Text: 7=:3 3 —/s ’ Data sheet status Preliminary specification date of Issue June 1992 MX0912B350Y NPN Silicon planar epitaxial microwave power transistor SbE D PHILIPS INTERNATIONAL • 711DûEb ÜDHb3SM DESCRIPTION APPLICATION FEATURES • Interdigitated structure; high
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MX0912B350Y
7110A2b
ampl95
T-33-15
MX0912B350Y
711D6Eb
D04b3L
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NPN Silicon Epitaxial Planar Transistor
Abstract: Zv-z 21 MX0912B350Y
Text: Data sheet sta tu s Preliminary specification date o t Issue July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION D ESCRIPTION • Interdigitated structure; high em itter efficiency. • D iffused em itter ballasting
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MX0912B350Y
M90-1196/Y
NPN Silicon Epitaxial Planar Transistor
Zv-z 21
MX0912B350Y
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MX0912B350Y
Abstract: No abstract text available
Text: Data sheet status Preliminary specification date of Issue June 1992 P H IL IP S MX0912B350Y NPN Silicon planar epitaxial microwave power transistor SbE ]> INTERNATIONAL • 7110ûSb GD4b354 ÔÛT « P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high
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MX0912B350Y
GD4b354
FO-91B
MCA926
7110fl2b
MX0912B350Y
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