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    MCL-25 RF Search Results

    MCL-25 RF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    LXMS21NCMH-230 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    MCL-25 RF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    varistor 10k 391

    Abstract: hybrid ic FBA 1001 1001 fba hybrid 10K ohms 0805 package LPC4045 FBA 1001 Varistor 391 10k KL32 510k 25 varistor WK73
    Text: NEW Products are highlighted in RED Bolivar Drive * PO Box 547 * Bradford, PA 16701 * USA * 814-362-5536 * Fax: 814-362-8883 * www.koaspeer.com Multilayer Inductor Size Ref. Series MCL MHL Ferrite Beads CZB CZP FBA Metal Oxide Varistor 25% 0201 0.6x0.03 0402


    Original     		PDF CRxx10Y 10Meg MRGF16 varistor 10k 391 hybrid ic FBA 1001 1001 fba hybrid 10K ohms 0805 package LPC4045 FBA 1001 Varistor 391 10k KL32 510k 25 varistor WK73

    NN12

    Abstract: P35-4229-000-200
    Text: P35-4229-000-200 GaAs MMIC SPDT REFLECTIVE SWITCH, DC - 20GHz Features • Ultra Broadband • Low insertion loss 2.0dB typ at 18GHz • • Fast switching speed High isolation 45dB at 10GHz • Through GaAs Vias for improved performance Description The P35-4229-000-200 is a high performance Gallium Arsenide monolithic single pole double throw broadband RF


    Original     		PDF P35-4229-000-200 20GHz 18GHz 10GHz P35-4229-000-200 462/SM/01574/200 NN12

    4235

    Abstract: NN12 P35-4235-000-200
    Text: P35-4235-000-200 GaAs MMIC SPST ABSORPTIVE SWITCH, DC - 20GHz Features • • • • • Broadband Low insertion loss 1.8dB typ at 18GHz Fast switching speed High isolation 50dB at 18GHz Through GaAs Vias for improved performance Description The P35-4235-000-200 is a high performance Gallium Arsenide monolithic single pole single throw broadband RF


    Original     		PDF P35-4235-000-200 20GHz 18GHz P35-4235-000-200 462/SM/01573/200 4235 NN12

    NN12

    Abstract: P35-0702R
    Text: P35-0702R GaAs MMIC SPDT REFLECTIVE SWITCH, DC - 2GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • SO8 surface mount package 0.5dB typ at 1GHz Description The P35-0702R is a high performance Gallium Arsenide monolithic single pole double throw RF switch


    Original     		PDF P35-0702R P35-0702R 463/SM/00022/200 NN12

    GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz

    Abstract: NN12 P35-4227-3T
    Text: P35-4227-3T GaAs MMIC SPDT TERMINATED SWITCH, DC - 3GHz Features • Broadband performance • High Isolation; 45dB typ at 1GHz • • Ultra low DC power consumption Fast switching speed; 3ns typical • SO8 surface mount plastic package Description The P35-4227-3T is a high performance Gallium Arsenide single pole double throw broadband RF


    Original     		PDF P35-4227-3T P35-4227-3T S20atic 463/SM/00057/200 GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz NN12

    NN12

    Abstract: P35-4230-000-200
    Text: P35-4230-000-200 GaAs MMIC SPST TERMINATED SWITCH, DC - 4GHz Features • Broadband performance • Low insertion loss; 1.6dB typ at 2GHz • • Ultra low DC power consumption Fast switching speed; 3ns typical Description The P35-4230-000-200 is a high performance Gallium Arsenide single pole single throw broadband RF


    Original     		PDF P35-4230-000-200 P35-4230-000-200 462/SM/01745/200 NN12

    NN12

    Abstract: P35-4250-0 P35-4250-3
    Text: P35-4250-0 GaAs MMIC SP4T REFLECTIVE SWITCH, DC - 4GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • Small die size; 0.67 mm 0.6dB typ at 2GHz 2 Description The P35-4250-0 is a high performance Gallium Arsenide single pole four throw RF switch MMIC. It is


    Original     		PDF P35-4250-0 P35-4250-0 462/SM/00027/200 NN12 P35-4250-3

    GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz

    Abstract: NN12 P35-4215-0 P35-4215-1R P35-4215-1T
    Text: P35-4215-0 GaAs MMIC SPDT REFLECTIVE/NON-REFLECTIVE SWITCH, DC - 4GHz Features • • Broadband performance Low insertion loss; 0.5dB typ at 2GHz • Ultra low DC power consumption • Fast switching speed; 3ns typical • Chip form Description The P35-4215-0 is a high performance Gallium Arsenide single pole double throw broadband RF switch


    Original     		PDF P35-4215-0 P35-4215-0 462/SM/00025/200 GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz NN12 P35-4215-1R P35-4215-1T

    NN12

    Abstract: P35-4227-3R
    Text: P35-4227-3R GaAs MMIC SPDT REFLECTIVE SWITCH, DC - 3GHz Features • Broadband performance • High Isolation; 40dB typ at 1GHz • • Ultra low DC power consumption Fast switching speed; 3ns typical • SO8 surface mount plastic package Description The P35-4227-3R is a high performance Gallium Arsenide single pole double throw broadband RF


    Original     		PDF P35-4227-3R P35-4227-3R 463/SM/00058/200 NN12

    soic14 150

    Abstract: NN12 P35-4245-3 SOIC14
    Text: P35-4245-3 GaAs MMIC DPDT REFLECTIVE SWITCH, DC - 2GHz Features • Broadband performance • Low insertion loss; 0.7dB typ at 1GHz • • Ultra low DC power consumption Fast switching speed; 3ns typical • SO14 surface mount package Description The P35-4245-3 is a high performance Gallium Arsenide double pole double throw RF switch. It is


    Original     		PDF P35-4245-3 P35-4245-3 463/SM/00141/200 soic14 150 NN12 SOIC14

    NN12

    Abstract: P35-4252-0 P35-4252-3
    Text: P35-4252-0 GaAs MMIC SP4T TERMINATED SWITCH, DC - 4GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • Small die size; 0.67 mm 0.7dB typ at 2GHz 2 Description The P35-4252-0 is a high performance Gallium Arsenide single pole four throw RF switch MMIC. It is


    Original     		PDF P35-4252-0 P35-4252-0 462/SM/00030/200 NN12 P35-4252-3

    MCL 29

    Abstract: NN12 P35-4211-0 P35-4211-1
    Text: P35-4211-0 GaAs MMIC SPDT REFLECTIVE SWITCH, DC - 3GHz Features • Broadband performance • Low insertion loss; 0.5dB typ at 1GHz • Ultra low DC power consumption • Fast switching speed; 3ns typical • Chip form Description The P35-4211-0 is a high performance Gallium Arsenide monolithic single pole double throw RF switch,


    Original     		PDF P35-4211-0 P35-4211-0 462/SM/00029/200 MCL 29 NN12 P35-4211-1

    JESD22-C101A

    Abstract: TB-01 VNA-23 XX211 ENV08T1
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 3V & 5V operation • no external biasing circuit required • internal DC blocking at RF input and output • high directivity, 18 dB typ. • wide bandwidth, 0.5 to 2.5 GHz • low noise figure, 4.7 dB typ.


    Original     		PDF VNA-23 XX211 VNA-23 000ours J-Std-020C C/85RH JESD22-C101A TB-01 XX211 ENV08T1

    MIPI

    Abstract: JESD22-C101A TB-01 VNA-21
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 3V & 5V operation • no external biasing circuit required • internal DC blocking at RF input and output • high directivity, 20 dB typ. • wide bandwidth, 0.5 to 2.5 GHz • low noise figure, 6.4 dB typ.


    Original     		PDF VNA-21 XX211-1 VNA-21 J-Std-020C C/85RH MIPI JESD22-C101A TB-01

    Untitled

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 3V & 5V operation • no external biasing circuit required • internal DC blocking at RF input and output • high directivity, 18 dB typ. • wide bandwidth, 0.5 to 2.5 GHz • low noise figure, 4.7 dB typ.


    Original     		PDF VNA-23 XX211-1 VNA-23 C/85RH

    P35-4250

    Abstract: NN12 P35-4250-3
    Text: P35-4250-3 GaAs MMIC SP4T REFLECTIVE SWITCH, DC - 2GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • SO16 surface mount package 0.7dB typ at 1GHz Description The P35-4250-3 is a high performance Gallium Arsenide single pole four throw RF switch. It is suitable


    Original     		PDF P35-4250-3 P35-4250-3 463/SM/00074/200 P35-4250 NN12

    MCLVNA2

    Abstract: marking mcl JESD22-C101A TB-01 VNA-22 marking mmic mini-circuits c.d.m. technology sam
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 3V & 5V operation • no external biasing circuit required • internal DC blocking at RF input and output • high directivity, 20 dB typ. • wide bandwidth, 0.5 to 2.5 GHz • low noise figure, 6.7 dB typ.


    Original     		PDF VNA-22 XX211-1 VNA-22 00ours J-Std-020C C/85RH MCLVNA2 marking mcl JESD22-C101A TB-01 marking mmic mini-circuits c.d.m. technology sam

    body marking MCL

    Abstract: marking MCL JESD22-C101A TB-01 VNA-21
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 3V & 5V operation • no external biasing circuit required • internal DC blocking at RF input and output • high directivity, 20 dB typ. • wide bandwidth, 0.5 to 2.5 GHz • low noise figure, 6.4 dB typ.


    Original     		PDF VNA-21 XX211-1 VNA-21 J-Std-020C C/85RH body marking MCL marking MCL JESD22-C101A TB-01

    Untitled

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 3V & 5V operation • no external biasing circuit required • internal DC blocking at RF input and output • high directivity, 18 dB typ. • wide bandwidth, 0.5 to 2.5 GHz • low noise figure, 4.7 dB typ.


    Original     		PDF VNA-23 XX211 VNA-23 C/85RH AS9100

    ENV08T1

    Abstract: mcl 224 marking mcl JESD22-C101A TB-01 VNA-28
    Text: High Directivity Monolithic Amplifier 0.5-2.5 GHz Product Features • 3V & 5V operation • no external biasing circuit required • internal DC blocking at RF input and output • high directivity, 18 dB typ. • wide bandwidth, 0.5 to 2.5 GHz • low noise figure, 3.7 dB typ.


    Original     		PDF VNA-28 XX211-1 VNA-28 J-Std-020C C/85RH ENV08T1 mcl 224 marking mcl JESD22-C101A TB-01

    NN12

    Abstract: P35-4245-0 P35-4245-3
    Text: P35-4245-0 GaAs MMIC DPDT REFLECTIVE SWITCH, DC - 6GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical 0.5dB typ at 2GHz Description The P35-4245-0 is a high performance Gallium Arsenide double pole double throw broadband RF switch


    Original     		PDF P35-4245-0 P35-4245-0 462/SM/00026/200 NN12 P35-4245-3

    mcl 600

    Abstract: No abstract text available
    Text: Plug-In Bandpass Filter 50Ω Elliptic Response 0"0 7 0"0 7 25 to 45 MHz Maximum Ratings Features -40oC to 85oC -55oC to 100oC 0.5W at 25oC Operating Temperature Storage Temperature RF Power Input • Good Return Loss, 20 dB Typ @ Pass Band • Small Size 0.77" X 0.40" X 0.40"


    Original     		PDF -40oC -55oC 100oC 2002/95/EC) PBP-35W M98898 EDR-7459U mcl 600

    NN12

    Abstract: P35-4750-1 P35-4755-P05
    Text: P35-4750-1 TRANSMIT/RECEIVE GAIN BLOCKS AND SWITCHES FOR 2.5GHz WLAN APPLICATIONS Features • • • Low receive current consumption Integrated RF routing switch Requires no external matching, RF coupling or biasing components Description This Gallium Arsenide Monolithic Integrated Circuit GaAs MMIC contains a two stage receive


    Original     		PDF P35-4750-1 P35-4750-1 463/SM/00081/200 NN12 P35-4755-P05

    Untitled

    Abstract: No abstract text available
    Text: Plug-In Bandpass Filter 50Ω Elliptic Response 0"0 7 0"0 7 25 to 45 MHz Maximum Ratings Features -40oC to 85oC -55oC to 100oC Operating Temperature Storage Temperature 0.5W at 25oC RF Power Input • Good Return Loss, 20 dB Typ @ Pass Band • Small Size 0.77" X 0.40" X 0.40"


    Original     		PDF -40oC -55oC 100oC 2002/95/EC) PBP-35W M98898 EDR-7459U