5Bp power control
Abstract: Motorola CMOS Dynamic RAM 2m x 8 Nippon capacitors
Text: MOTOROLA Order this document by MCM36204/D SEMICONDUCTOR TECHNICAL DATA MCM36204 2M x 36 Bit ECC Dynamic Random Access Memory Module for Error Correction Applications The MCM36204 is a 72M dynamic random access memory DRAM module organized as 2,097,152 x 36 bits. The module is a double-sided 72-lead single-inline memory module (SIMM) consisting of eighteen MCM54400AN DRAMs
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MCM36204/D
MCM36204
MCM36204
72-lead
MCM54400AN
MCM36204/D*
5Bp power control
Motorola CMOS Dynamic RAM 2m x 8
Nippon capacitors
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MCM81430
Abstract: MCM81430S70 5Bp power control 30 pin simm memory dynamic MCM81430S60 Nippon capacitors
Text: MOTOROLA Order this document by MCM81430/D SEMICONDUCTOR TECHNICAL DATA MCM81430 1M x 8 Bit Dynamic Random Access Module S PACKAGE SIMM MODULE CASE 839A-01 The MCM81430 is an 8M dynamic random access memory DRAM module organized as 1,048,576 x 8 bits. The module is a 30-lead single-in-line memory module (SIMM) consisting of two MCM54400AN DRAMs housed in a 20/26 J-lead small
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MCM81430/D
MCM81430
39A-01
MCM81430
30-lead
MCM54400AN
MCM81430/D*
MCM81430S70
5Bp power control
30 pin simm memory dynamic
MCM81430S60
Nippon capacitors
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MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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SG379/D
1N965BRL
ZEN15V
1N751AS
1N967BRL
ZEN18V
1N751ASRL
1N968BRL
ZEN20V
MC68B21CP
xcm916x1cth16
transistor marking code 12W SOT-23
sg379
MC68B54P
XC68HC805P18CDW
mc68b50cp
MC2830
NE555N
CHN NE555N
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MCM32130SH70
Abstract: simm 72 dram Nippon capacitors MCM32130-70
Text: MOTOROLA Order this document by MCM32130/D SEMICONDUCTOR TECHNICAL DATA MCM32130 MCM32T100 1M x 32 Bit Dynamic Random Access Memory Module The MCM32130 is a 32M dynamic random access memory DRAM module organized as 1,048,576 x 32 bits. The module is a 72–lead single–in–line memory
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MCM32130/D
MCM32130
MCM32T100
MCM32130
MCM54400AN
MCM32130/D*
MCM32130SH70
simm 72 dram
Nippon capacitors
MCM32130-70
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simm 72 dram
Abstract: Nippon capacitors
Text: MOTOROLA Order this document by MCM36104/D SEMICONDUCTOR TECHNICAL DATA MCM36104 1M x 36 Bit ECC Dynamic Random Access Memory Module for Error Correction Applications The MCM36104 is a 36M dynamic random access memory DRAM module organized as 1,048,576 x 36 bits. The module is a 72-lead single-in-line memory
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MCM36104/D
MCM36104
MCM36104
72-lead
MCM54400AN
MCM36104/D*
simm 72 dram
Nippon capacitors
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MCM40100
Abstract: Nippon capacitors
Text: MOTOROLA Order this document by MCM40100/D SEMICONDUCTOR TECHNICAL DATA MCM40100 1M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The MCM40100 is a 40M dynamic random access memory DRAM modules organized as 1,048,576 x 40 bits. The module is a 72–lead single–in–line
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MCM40100/D
MCM40100
MCM40100
MCM54400AN
MCM40100/D*
Nippon capacitors
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MCM40200
Abstract: Nippon capacitors
Text: MOTOROLA Order this document by MCM40200/D SEMICONDUCTOR TECHNICAL DATA MCM40200 2M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The MCM40200 is an 80M dynamic random access memory DRAM module organized as 2,097,152 x 40 bits. The module is a double–sided 72–lead
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MCM40200/D
MCM40200
MCM40200
MCM54400AN
MCM54400AN
MCM40200/D*
Nippon capacitors
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MCM91430S
Abstract: motorola 30-pin simm memory dynamic 30-pin simm memory
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91430 1M x 9 Bit Dynamic Random Access Memory Module The MCM91430 is a 9M dynamic random access memory DRAM module orga nized as 1,048,576 x 9 bits. The module is a 30-lead single -in-line memory module (SIMM) consisting of two MCM54400AN and one 1M DRAM housed in a 20/26 J lead small outline package (SOJ) and mounted on a substrate along with a 0.22 pF
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MCM91430
30-lead
MCM54400AN
MCM91430S
motorola 30-pin simm memory dynamic
30-pin simm memory
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TCA 3189
Abstract: MCM81430S
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 1Mx8 Bit Dynamic Random Access Module MCM81430 MCM8L1430 The MCMB1430 and MCM8L1430 are 8M dynamic random access memory DRAM modules organized as 1,048,576 x 8 bits. The modules are 30-lead single-in-line memory modules (SIMM) consisting of two MCM54400AN DRAMs
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MCM81430
MCM8L1430
MCMB1430
MCM8L1430
30-lead
MCM54400AN
8L1430
TCA 3189
MCM81430S
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MCM81430S80
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 8 Bit Dynamic Random Access Module MCM81430 MCM8L1430 The MCM81430 and MCM8L1430 are 8M dynamic random access memory DRAM modules organized as 1,048,576 x 8 bits. The modules are 30-lead singlein-line memory modules (SIMM) consisting of two MCM54400AN DRAMs housed in
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MCM81430
MCM8L1430
30-lead
MCM54400AN
8L1430
MCM81430S6Û
MCM81430S70
MCM81430S80
MCM8L1430S60
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91430 1M x 9 Bit Dynamic Random Access Memory Module The MCM91430 is a 9M dynamic random access memory DRAM module orga nized as 1,048,576 x 9 bits. The module is a 30-lead single-in-line memory module (SIMM) consisting of two MCM54400AN and one 1M DRAM housed in a 20/26 J-lead
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MCM91430
30-lead
MCM54400AN
91430L60
91430L70
91430SC60
91430SC70
91430S60
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Untitled
Abstract: No abstract text available
Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA MCM81430 1M x 8 Bit Dynamic Random Access Module The MCM81430 is an 8M dynamic random access memory DRAM module or ganized as 1,048,576 x 8 bits. The module is a 30-lead single-in-line memory mod ule (SIMM) consisting of two MCM54400AN DRAMs housed in a 20/26 J-lead small
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MCM81430
30-lead
MCM54400AN
MCM81430S60
MCM61430S70
MCM81430L60
MCM81430L70
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM81430 1M x 8 Bit Dynamic Random Access Module The MCM81430 is an 8M dynamic random access memory DRAM module or ganized as 1,048,576 x 8 bits. The module is a 30-lead s in gle -in-line memory module (SIMM) consisting of two MCM54400AN DRAMs housed in a 20/26 J-lea d
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MCM81430
30-lead
MCM54400AN
81430S60
81430S
81430L60
81430L70
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32130S
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM32130 1M x 32 Bit Dynamic Random Access Memory Module The MCM32130 is a 32M dynamic random access memory DRAM module organized as 1,048,576 x 32 bits. The module is a 72-lead single-in-line memory module (SIMM) consisting of eight MCM54400AN DRAMs housed in standard 300
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MCM32130
72-lead
MCM54400AN
32130S
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ic nn 5198 k
Abstract: nn 5198 k mcm54400
Text: M OTOROLA SEMICONDUCTOR -TECHNICAL DATA 1M x 36 Bit ECC Dynamic Random Access Memory Module MCM36104 for Error Correction Applications The MCM36104 is a 36M dynamic random access memory DRAM module organized as 1,048,576 x 36 bits. The module is a 72-lead single-in-line memory
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MCM36104
72-lead
MCM54400AN
MCM36200
ic nn 5198 k
nn 5198 k
mcm54400
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM40200 2M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The MCM40200 is an SOM dynamic random access memory DRAM module organized as 2,097,152 x 40 bits. The module is a double-sided 72-lead
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MCM40200
72-lead
MCM54400AN
MCM40200AS60
MCM40200AS70
MCM40200ASG60
MCM40200ASG70
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MCM54400A-C
Abstract: mcm54400az M5440 M54400
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-C Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40°C to + 85°C The MCM54400A is a 0.7p CM OS high-speed, dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate pro
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MCM54400A-C
MCM54400A
300-mil
100-mil
4400A
MCM54400ANJ70
MCM54400A-C
mcm54400az
M5440
M54400
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32130S
Abstract: No abstract text available
Text: MOTOROLA SEM ICO ND U C TO R TECHNICAL DATA MCM32130 MCM32L130 1M x 32 Bit Dynamic Random Access Memory Module The MCM 32130S is a 32M, dynam ic random access memory DRAM module organized as 1,048,576 x 32 bits. The module is a 72-lead single-in-line memory
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32130S
72-lead
MCM54400AN
300-m
MCM32100SH70
MCM32100SH80
MCM32100SH10
MCM32L100SH70
MCM32L100SH80
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 36 Bit ECC Dynamic Random Access Memory Module MCM36104 for Error Correction Applications The MCM36104 is a 36M dynamic random access memory DRAM module organized as 1,048,576 x 36 bits. The module is a 72-lead s in gle -in-line
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MCM36104
72-lead
MCM54400AN
36104S60
36104S70
36104SG
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MCM54400AZ60
Abstract: mcm54400a MCM54400A-70 mcm54400az MCM5L4400AZ60 MCM5L4400A-70 mcm54400 MCM54400AN60
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A MCM5L4400A 1M x 4 CMOS Dynamic RAM Fast Page Mode The M C M 54400A is a 0 .7 ji CM OS high-speed dynam ic random access memory. It is organized as 1,048,576 four-bit w ords and fabricated with CMOS silicon-gate process
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4400A
MCM54400AN60
MCM54400AN70
MCM54400AN80
MCM5L4400AN60
MCM5L4400AN70
MCM5L4400AN80
MCM54400AN60R2
MCM54400AN70R2
MCM54400AZ60
mcm54400a
MCM54400A-70
mcm54400az
MCM5L4400AZ60
MCM5L4400A-70
mcm54400
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4116 Dram
Abstract: 32T200
Text: MOTOROLA SEMICONDUCTOR -TECHNICAL DATA MCM32230 MCM32T200 2M x 32 Bit Dynamic Random Access Memory Module The MCM32230 is a 64M dynamic random access memory DRAM module organized as 2,097,152 x 32 bits. The module is a 72-lead double sided single
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MCM32230
72-lead
MCM54400AN
32T200
32T200SH
MCM32T200
4116 Dram
32T200
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SC63594FN
Abstract: No abstract text available
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MCM72100 Product Preview 1M x 72 Bit Dynamic Random Access Memory Module TOP VIEW The MCM72100 is a dynamic random access memory DRAM module organized as 1,048,576 x 72 bits. The module is a 100-lead single-in-line memory module
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MCM72100
MCM72100
100-lead
MCM54400AN
SC63594FN
20-lead
10-bit
dri21
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32L230
Abstract: mcm54400
Text: MOTOROLA wm SEM ICONDUCTOR TECHNICAL DATA MCM32230 MCM32L230 2M x 32 Bit Dynamic Random Access Memory Module The MCM32230S is a 64M, dynamic random access memory DRAM module organized as 2,097,152 x 32 bits. The module is a 72-lead double sided single-in-line
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MCM32230
MCM32L230
MCM32230S
72-lead
MCM54400AN
300-mil-wide
MCM32230SH70
MCM32230SH80
MCM32230SH10
32L230
mcm54400
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MCM54400AZ70
Abstract: MCM54400AN70 MCM54400AZ80 MCM54400A-C MCM54400AN80 MCM54400A-C70 313X0
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-C Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40°C to + 85°C The M C M 54400A is a 0 .7 fi C M OS high-speed dynam ic random access memory. It is organized as 1,048,576 four-bit w ords and fabricated with C M OS silicon-gate process
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MCM54400A-C
4400A
MOTOD010
MCM54400A-C
--------------544Q0A-C
MCM54400AN70
MCM54400AN80
MCM54400AN70R2
MCM54400AZ70
MCM54400AZ80
MCM54400AN80
MCM54400A-C70
313X0
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