Untitled
Abstract: No abstract text available
Text: PRELIMINARY AS6064 AS6064 19.0 dBm 17.5 dB 4.5 dB 33 dB SMTO-8 Package for Amplifiers Medium Output Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Medium Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Medium Noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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AS6064
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AS6064 AS6064 19.0 dBm 17.5 dB 4.5 dB 33 dB SMTO-8 Package for Amplifiers Medium Output Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Medium Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Medium Noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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AS6064
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power amplifier circuit diagram
Abstract: SSOP14 package SSOP14 pcb SSOP14 NJG1301V NJG1302V NJG1304E Low frequency amplifier circuit high gain distortion diagram
Text: AMPLIFIERS MEDIUM POWER AMPLIFIER GaAs MMIC MEDIUM POWER AMPLIFIER GaAs MMIC NJG1301V NJG1302V/ NJG1304E DATA SHEET DATA SHEET DATA SHEET • GENERAL DESCRIPTION ■ GENERAL DESCRIPTION NJG1301V is a medium power amplifier, which is designed for use of output stage of Japanese PHS and digital wireless
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NJG1301V
NJG1302V/
NJG1304E
NJG1301V
21dBm-output
NJG1302V/NJG1304E
21dBm)
195/180mA
-55/-70dBc
power amplifier circuit diagram
SSOP14 package
SSOP14 pcb
SSOP14
NJG1302V
NJG1304E
Low frequency amplifier circuit
high gain distortion diagram
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Untitled
Abstract: No abstract text available
Text: 2/99 AC1523 AC1525 5 TO 1500 MHz TO-8 CASCADABLE AMPLIFIERS Typical Values Low Noise Figure . . . . . . . . . . . . . . . . . . . . . . . . Medium Gain. . . . . . . . . . . . . . . . . . . . . . . . . . . . Medium Output Power . . . . . . . . . . . . . . . . . . . .
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AC1523
AC1525
AC1523/AC1525
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AC1525
Abstract: No abstract text available
Text: 2/99 AC1523 AC1525 5 TO 1500 MHz TO-8 CASCADABLE AMPLIFIERS Typical Values Low Noise Figure. . . . . . . . . . . . . . . . . . . . . . . Medium Gain . . . . . . . . . . . . . . . . . . . . . . . . . . Medium Output Power . . . . . . . . . . . . . . . . . . .
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AC1523
AC1525
AC1523
AC1523/AC1525
AC1525
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Untitled
Abstract: No abstract text available
Text: 2/99 AC1523 AC1525 5 TO 1500 MHz TO-8 CASCADABLE AMPLIFIERS Typical Values Low Noise Figure . . . . . . . . . . . . . . . . . . . . . . . . Medium Gain. . . . . . . . . . . . . . . . . . . . . . . . . . . . Medium Output Power . . . . . . . . . . . . . . . . . . . .
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AC1523
AC1525
AC1523
AC1523/AC1525
AC1525
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Untitled
Abstract: No abstract text available
Text: 2/99 AC1523 AC1525 5 TO 1500 MHz TO-8 CASCADABLE AMPLIFIERS Typical Values Low Noise Figure . . . . . . . . . . . . . . . . . . . . . . . . Medium Gain. . . . . . . . . . . . . . . . . . . . . . . . . . . . Medium Output Power . . . . . . . . . . . . . . . . . . . .
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AC1523
AC1525
AC1523
AC1523/AC1525
AC1525
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Untitled
Abstract: No abstract text available
Text: 2/10 AS6064 AS6064 17.5 dB +19.0 dBm 3.5 dB 37 dB SMTO-8 Package for Amplifiers Medium Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Medium Output Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Low Noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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AS6064
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SSPA
Abstract: x-band power transistor Solid State Microwave SSPA C Band
Text: Solid State Medium Power Amplifier Broadband X Band Solid State RF Medium Power Amplifier Aethercomm P/N MPA 7984-35-23 is a medium • 25 dBm P1dB minimum power, broadband solid state power amplifier SSPA • +35 dBm OIP3 minimum for use in commercial or military systems.
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Untitled
Abstract: No abstract text available
Text: HMC441LP3 / 441LP3E v05.0812 LINEAR & POWER AMPLIFIERS - SMT GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications Features The HMC441LP3 / HMC441LP3E is a medium PA for: Gain: 14 dB • Point-to-Point Radios Saturated Power: +20 dBm @ 20% PAE
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HMC441LP3
441LP3E
HMC441LP3E
HMC441LP3
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Untitled
Abstract: No abstract text available
Text: RF2127 2 MEDIUM POWER LINEAR AMPLIFIER Typical Applications • Commercial and Consumer Systems • PCS Communication Systems • Portable Battery-Powered Equipment 2 POWER AMPLIFIERS • DECT Cordless Applications Product Description The RF2127 is a medium-power, high-efficiency, linear
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RF2127
RF2127
1800MHz
1900MHz,
100mW
RF2125
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RF2125
Abstract: RF2127 L0320 73C7
Text: RF2127 2 MEDIUM POWER LINEAR AMPLIFIER Typical Applications • Commercial and Consumer Systems • PCS Communication Systems • Portable Battery-Powered Equipment Product Description 2 POWER AMPLIFIERS • DECT Cordless Applications -A- The RF2127 is a medium-power, high-efficiency, linear
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RF2127
RF2127
1800MHz
1900MHz,
100mW
RF2125
L0320
73C7
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Untitled
Abstract: No abstract text available
Text: HMC441LP3 / 441LP3E v05.0812 LINEAR & POWER AMPLIFIERS - SMT GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications Features The HMC441LP3 / HMC441LP3E is a medium PA for: Gain: 14 dB • Point-to-Point Radios Saturated Power: +20 dBm @ 20% PAE
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HMC441LP3
441LP3E
HMC441LP3E
HMC441LP3
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150–200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.
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MJE341
MJE344
r14525
MJE341/D
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HMC441LP3E
Abstract: HMC441LP3
Text: HMC441LP3 / 441LP3E v03.0907 LINEAR & POWER AMPLIFIERS - SMT 9 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications Features The HMC441LP3 / HMC441LP3E is a medium PA for: Gain: 14 dB • Point-to-Point Radios Saturated Power: +20 dBm @ 20% PAE
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HMC441LP3
441LP3E
HMC441LP3E
HMC441LP3
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Untitled
Abstract: No abstract text available
Text: HMC442 v00.0602 MICROWAVE CORPORATION GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC442 is ideal for use as a medium power amplifier for: Saturated Power: +23 dBm @ 25% PAE • Point-to-Point Radios
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HMC442
HMC442
96mm2)
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Untitled
Abstract: No abstract text available
Text: HMC442 v00.0602 MICROWAVE CORPORATION GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC442 is ideal for use as a medium power amplifier for: Saturated Power: +23 dBm @ 25% PAE • Point-to-Point Radios
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HMC442
HMC442
96mm2)
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Untitled
Abstract: No abstract text available
Text: HMC442 v04.0913 LINEAR & POWER AMPLIFIERS - CHIP GaAs pHEMT MMIC MEDIUM POWER AMPLIFIERS, 17.5 - 25.5 GHz Typical Applications Features The HMC442 is ideal for use as a medium power amplifier for: Saturated Power: +23 dBm @ 25% PAE • Point-to-Point and Point-to-Multi-Point Radios
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HMC442
HMC442
025mm
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HMC442
Abstract: No abstract text available
Text: HMC442 v01.0304 MICROWAVE CORPORATION GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC442 is ideal for use as a medium power amplifier for: Saturated Power: +23 dBm @ 25% PAE • Point-to-Point Radios
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HMC442
HMC442
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Untitled
Abstract: No abstract text available
Text: HMC441LH5 v01.0907 LINEAR & POWER AMPLIFIERS - SMT 9 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz Typical Applications Features The HMC441LH5 is a medium PA for: Gain: 5 dB • Telecom Infrastructure Saturated Power: +21.5 dBm @ 25% PAE • Military Radio, Radar & ECM
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HMC441LH5
HMC441LH5
25mm2
MIL-PRF-38535
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2N5321
Abstract: 2N5320 2N5322 2N5323
Text: 2N5320 2N5321 MEDIUM-POWER AMPLIFIERS DESCRIPTION The 2N5320 and 2N5321 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power applications in industrial and commercial equipments.
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2N5320
2N5321
2N5320
2N5321
2N5322
2N5323.
2N5323
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2SC2340
Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
Text: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers
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L427414
r-33-0S
NE568
NE56800
operate-69
2SC2340
MR 6500
BM74
2SC2339
NE56800
NE56803
NE56853
NE56854
NE56857
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2SC2340
Abstract: transistor BJ 102 131 NE56800 2SC2339 NE568 NE56803 NE56853 NE56857 NE56887 ne56853e
Text: NEC/ 1SE D CALIFORNIA □42 741 4 0001323 4 r-3 3 -c S NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • H IG H f s : 4.2 G H z The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers
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L427414
r-33-0S
NE568
NE56800
2SC2340
transistor BJ 102 131
NE56800
2SC2339
NE56803
NE56853
NE56857
NE56887
ne56853e
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amplifiers
Abstract: Low Noise Amplifiers Medium Power Amplifiers power amplifiers
Text: A m plifier s Contents PAGE Broadband GaAs FET Amplifiers Low Noise Amplifiers Medium Power Amplifiers Limiting Amplifiers # • ,«11». Narrowband GaAs FET Amplifiers Low Noise Amplifiers Medium Power Amplifiers . 139 Module GaAs FET Amplifiers
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