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    MEDIUM POWER BIPOLAR TRANSISTORS ROHM Search Results

    MEDIUM POWER BIPOLAR TRANSISTORS ROHM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    MEDIUM POWER BIPOLAR TRANSISTORS ROHM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    rds035

    Abstract: rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198
    Text: Standard Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Small signal type MOSFET RHU002N06 Medium Power Bipolar Transistors 0.5W-1.2W MPT3 Package Description CPT3 MPT3 Item Application Driver Low VCE (sat) High hFE High voltage SW High voltage-High speed SW


    Original     		RHU002N06 2SD2167 56to270 2SB1132 2SD1664 82to390 2SB1188 2SD1766 2SB1182 2SD1758 rds035 rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198 PDF

    2SD 92 M

    Abstract: N 2222
    Text: Bipolar transistors-US/European series Bipolar transistors-US/European series The series name of ROHM’s bipolar transistors is used to classify these products as follows: PNP 2SA series 2SB series NPN 2SC series 2SD series In addition to these series, there are similar transistors that are manufactured to the US and


    OCR Scan     		bipolar80 2SD 92 M N 2222 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F ►External dim ensions (Units: mm) •F e a tu re s 1) High V ceo. V = 80V ceo 2SD1898 2) High IC. Ic = 1 A (D C ) 3) G ood hre linearity. 4) c + 0 .2 5 - 0.1 1.6 ± 0.1


    OCR Scan     		2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F 2SD1898 1260/2S 2SB1181. SC-62 2SD1768S 2SD1733 2SD1863) 2SD1898) 2SD1381F) PDF

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23 PDF

    double TRANSISTOR SMD MARKING CODE mc

    Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578 PDF

    cdma Booster schematic

    Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
    Text: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….


    Original     		B132-H9014-X-X-7600 NB07-1094 cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz PDF

    CARD UMT 162

    Abstract: 350nm mosfet Medium Power Bipolar Transistors rohm autofocus IC 103 chip resistor Rohm PMR03 MDDI 1.5 cds motion sensor module laser diode for printer mobile touch panel ic
    Text: Divisional Review Divisional Review IC Integrated Circuit Field: Overview Power ICs DIGITAL CAMERAS. ROHM is continually working to strengthen and broaden its extensive power product lineup through the pursuit of power technology and by integrating disparate technical


    Original     		PDF

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    2sb1147

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K •Features ^External dim ensions (Units: mm) 1) Very low VcE(sai). 2 .9 ± 0 .2 VcE(sat) = — 0.13V (Typ.) ( Ic / I b 1 1+02 — 0.1 1.9±0.2 = 500m A/50m A) n 0,8±0.1 0.950.95 2) H igh cu rre n t c a p a c ity in co m p a c t


    OCR Scan     		2SD1781K 2SB1147K. SC-59 2sb1147 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 0.5A 2SC2411K/2SC4097/2SC1741S •F e a tu re s 1) High IcMax. IcMax. = 0.5mA 2) Low VcE(sat). O ptim al fo r low v o lt­ age operation. 3) Complements the 2SA1036K/2SA1577 / 2SA854S. •E x te rn a l dimensions (Units: mm)


    OCR Scan     		2SC2411K/2SC4097/2SC1741S 2SA1036K/2SA1577 2SA854S. 2SC2411K 2SC4097 SC-59 PDF

    2SD2144S

    Abstract: No abstract text available
    Text: Transistors High-current gain Medium Power Transistor 20V, 0.5A 2SD2114K/2SD2144S • F e a tu re s • E x te rn a l d im en sion s (Units: mm) 1 ) High D C current gain. hFE = 1200 (Typ.) 2SD2114K 2.9±0.2 ! V ebo = 1 2 V (Min.) 3) 1 1+02 ” - 0.1 I ,1-9±0-2


    OCR Scan     		2114K/2SD 2144S 2SD2114K SC-59 2SD2144S 2SD2114K/2SD2144S 100mV 2SD2144S PDF

    2SD1863

    Abstract: 2sd1733 2SD1898
    Text: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F •F e a tu re s 1) High ►External dimensions (Units: mm) V ceo . V ceo = 8 0 V 2SD1898 2) High IC. Ic = 1A (DC) 4.5±g:? c+0.2 5 _ 0.1 3) Good hre linearity. 4) Low VcEfsat),


    OCR Scan     		2SD1898 2SD1733 2SD1768S 2SD1863 2SD1381F 2SD1898 2SB12 /2SB1241 SC-62 PDF

    d1664

    Abstract: Transistor 1501 2sb1237
    Text: Transistors Medium Power Transistor -32V, -1A 2SB1132/2SA1515S/2SB1237 •F e a tu re s 1) • E x te rn a l dim ensions (Units: mm) LOW VcE(satl. VcE(sat) = - 0 .2 V (Typ.) 2SA1515S 2SB1132 4 S+0.2 (Ic /le = -5 0 0 m A /- 5 0 m A ) 5 - 0.1 16 2) C om plim ents 2S D 1664/2S D 1858.


    OCR Scan     		2SB1132/2SA1515S/2SB1237 2SB1132 2SA1515S 1664/2S SC-72 SC-62 2SB1237 2SB1132) d1664 Transistor 1501 2sb1237 PDF

    Motorola transistor smd marking codes

    Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
    Text: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,


    Original     		PDF

    Transistor 2SD1858

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 •F e a tu re s 1) (Ic / I b 2) • E x te r n a l dim ensions (Units: mm) Low VcE(sat) = 0.15V (typical). 2SD1664 2SD1858 = 5 0 0 m A /5 0 m A ) 6 .8 ± 0 2 C om plem ents the e+ 0 .2 5-0.1


    OCR Scan     		2SD1664 2SD1858 2SD1664 SC-62 Ta--25 2SD1664) 2SD1858) Transistor 2SD1858 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2212 / 2SD2143 / 2SD1866 / 2SD1764 2SD1856 Transistors Medium Power Transistor Motor relay or Solenoid drive I 2SD 2212 / 2SD 2143 / 2SD1866 / 2SD 1764 •F e a tu re s 1) 2) 3) 4 ) Built-in Strong Built-in Built-in •A b s o lu te maximum ratings (T a = 2 5 't )


    OCR Scan     		2SD2212 2SD2143 2SD1866 2SD1764 2SD1856 2SD2212 2SD2143 2SD1866 PDF

    ATIC 59 C1

    Abstract: e01n
    Text: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Low VcE(sat) = 0.15V (typical). (I c / I b = 500m A/50m A) 2) Complements the 2SB 1132/2SB1237. •S tru ctu re Epitaxial planar type


    OCR Scan     		2SD1664 2SD1858 1132/2SB1237. 2SD1858 O-220, 0Dlb713 O-220FN O-220FN O220FP ATIC 59 C1 e01n PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1900 2SC5053 Transistors Medium Power Transistor —50V, —1A 2SA1900 I • Features 1) ^Absolute maximum ratings (Ta—2 5 t ) L o w VcEfsat). (T y p .— 0 .1 5 V a t Ic/I b = — 5 0 0 /— 5 0 m A ) 2 ) Pc = 2W Parameter Collector-base voltage C otiector-emitter voltage


    OCR Scan     		2SA1900 2SC5053 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. PDF

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H PDF

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S •F e a tu re s IcMax. = - 5 0 0 m A 2) • E x t e r n a l d im e n s io n s (U nits: m m ) L a rg e lc. 2SA1577 2SA1036K L o w VcE(sat). O p tim a l f o r lo w - v o lt'¿±0.1


    OCR Scan     		2SA1036K/2SA1577/2SA854S 2SA1577 2SA1036K SC-59 SC-70 0Dlb713 O-220FN O-220FN O220FP T0-220FP, PDF

    TRANSISTOR S1A 64 smd

    Abstract: SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030
    Text: Discrete Semiconductors Selection Guide 2010 Diodes, transistors, ESD and signal conditioning devices Excellence in portfolio and performance Diodes Introducing new package technology Page 7 Portable and increasingly smaller end products fuel the race towards more sophisticated functionality in smaller form


    Original     		OT1061 OT1118 PSSI2021SAY PTVS10VP1UP TRANSISTOR S1A 64 smd SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030 PDF

    2sb1147

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K # Features •E x te rn a l dim ensions (Units: mm) 1) Very low VcE(sat). VcE(sat) = —0.13V (Typ.) 2.9±0.2 = 500m A/50m A) 1 9 ± 0.2 (Ic / I b 2) < <+0.2 1 1- 0 1 0.8 + 0.1 High cu rre n t ca p a city in co m p a ct


    OCR Scan     		2SD1781K 2SB1147K. SC-59 2sb1147 PDF

    2SD1898

    Abstract: 2SD1863 B1241 D1733
    Text: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F •F e a tu re s •E x te rn a l dim ensions (Units: mm) 1) High V ceo. V ceo = 8 0 V 2SD1898 2) High IC. Ic = 1A (DC) 3) Good hFE linearity. 4) 1.6 ± 0 1 r— 1 -m Low VcE(sat).


    OCR Scan     		2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F 2SD1898 1260/2S SC-62 2SD1768S 2SD1898 2SD1863 B1241 D1733 PDF