MEDIUM POWER TRANSISTOR Search Results

MEDIUM POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MEDIUM POWER TRANSISTOR Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Medium Power Transistors and Rectifiers for Power Management Applications		NXP Semiconductors	Medium Power Transistors and Rectifiers for Power Management Applications		Original	PDF

MEDIUM POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TBD438 Abstract: BD433 TBD436 TBD437 434 NPN transistors Text: BD433, 434, 435, 436, 437, 438 Medium Power Transistors General Purpose TO-126 Features: • NPN Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum	Original	PDF	BD433, O-126 O-126 TBD433 TBD434 TBD438 BD433 TBD436 TBD437 434 NPN transistors
bipolar transistor ghz s-parameter Abstract: 1565E HBFP-0450 LL2012-F 5e19 bipolar transistor s-parameter COND10 Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction HBFP-0450 Medium Power Amplifier Design Avago Technologies’ HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in	Original	PDF	HBFP-0450 HBFP-0450 OT-343 SC-70) 031-inch 59257503E-13 292E-1 bipolar transistor ghz s-parameter 1565E LL2012-F 5e19 bipolar transistor s-parameter COND10
7333 A Abstract: Power Transistors TO-126 Case farnell ic 901 BD437 Text: BD437 Medium Power Transistors General Purpose TO-126 Features: • NPN Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C	Original	PDF	BD437 O-126 O-126 7333 A Power Transistors TO-126 Case farnell ic 901 BD437
Power Transistors TO-126 Case Abstract: BD438 7333 A 9016 g farnell Text: BD438 Medium Power Transistors General Purpose TO-126 Features: • PNP Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C	Original	PDF	BD438 O-126 O-126 Power Transistors TO-126 Case BD438 7333 A 9016 g farnell
TEA15xx-series Abstract: laptop inverter ccfl low noise transistors bc638 power transistor transistors equivalents TV power transistor datasheet AN10117-01 PNP SOT89 laptop motherboard resistors Royer oscillator Schottky Diode SC-62 Text: Application Note Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Philips Semiconductors 1.2/W97 TRAD Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Application Note Philips Semiconductors	Original	PDF	AN10117-01 2/W97 AN10116: AN10230: PMEG1020EA PMEG2010EA D-22529 TEA15xx-series laptop inverter ccfl low noise transistors bc638 power transistor transistors equivalents TV power transistor datasheet AN10117-01 PNP SOT89 laptop motherboard resistors Royer oscillator Schottky Diode SC-62
Thomson-CSF POLYESTER capacitors Abstract: Thomson-CSF POLYESTER capacitors TPC thomson film capacitors .22 uf 400 volt ac capacitor thyristor control arc welding rectifier circuit thyristor control spot welding circuit KJE transistor mil-m-24519 FAV36B0804K capacitor snubber Polypropylene 1 uf Text: A KYOCERA GROUP COMPANY AVX Medium Power Film Capacitors For Power Applications Contents MEDIUM POWER FILM CAPACITORS DC FILTERING FFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4	Original	PDF	5M505-C Thomson-CSF POLYESTER capacitors Thomson-CSF POLYESTER capacitors TPC thomson film capacitors .22 uf 400 volt ac capacitor thyristor control arc welding rectifier circuit thyristor control spot welding circuit KJE transistor mil-m-24519 FAV36B0804K capacitor snubber Polypropylene 1 uf
BC237 Abstract: MSA1022 msc2295 BF391 "direct replacement" Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement Mode Silicon Gate TMOS E–FET SOT–223 for Surface Mount MEDIUM POWER TMOS FET 700 mA 240 VOLTS RDS on = 6.0 OHM This TMOS medium power field effect transistor is designed for	Original	PDF	M218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237 MSA1022 msc2295 BF391 "direct replacement"
Medium Power Bipolar Transistors Abstract: 2N5320 2N5322 Text: 2N5320, 2N5322 Series Medium Power Bipolar Transistors Features: • High performance, low frequency devices typically with current ratings 1A. Up to 1W power dissipation. • Silicon power switching transistors. • Medium power amplifier and switching applications.	Original	PDF	2N5320, 2N5322 Medium Power Bipolar Transistors 2N5320
2N5322 2N5320 Abstract: 2N5320 2N5322 2N532 Text: 2N5320 & 2N5322 Medium Power Transistors Features: • High performance, low frequency devices typically with current ratings 2A. Up to 1W power dissipation. • Silicon Power Switching Transistors. • Medium Power Amplifier and Switching Applications. 2N5320 NPN	Original	PDF	2N5320 2N5322 2N5320 2N5322 2N5322 2N5320 2N532
NTE315 Abstract: 10MHZ Text: NTE315 Silicon NPN Transistor, Medium Power Amp Features: D AF – HF Medium Power Amplifier Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–to–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V	Original	PDF	NTE315 100mA 10MHZ NTE315 10MHZ
PNP TRANSISTOR "SOT89" Abstract: SOT-89 TRANSISTOR PNP PNP TRANSISTOR SOT89 transistor PNP 5 w Text: PNP ᒦ৖ൈहࡍྯ૵਌ PNP Medium Power Transistor PNP Medium Power Transistor FHFCX593 PNP ᒦ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Medium Power Amplifier 中等功率放大 Complement to FHFCX493 SOT-89 PIN ASSIGNMENT 引腳說明	Original	PDF	FHFCX593 OT-89 FHFCX493 OT-89 FHFCX593 Char20 -250mA -25mA -500mA PNP TRANSISTOR "SOT89" SOT-89 TRANSISTOR PNP PNP TRANSISTOR SOT89 transistor PNP 5 w
NPN Transistor 1A 100V Abstract: sot89 "NPN TRANSISTOR" npn TRANSISTOR SOT89 100v 1a transistor transistor Ib 1A NPN transistor Ic 1A NPN Text: NPN ᒦ৖ൈहࡍྯ૵਌ NPN Medium Power Transistor NPN Medium Power Transistor FHFCX493 NPN ᒦ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Medium Power Amplifier 中等功率放大 Complement to FHFCX593 SOT-89 PIN ASSIGNMENT 引腳說明	Original	PDF	FHFCX493 OT-89 FHFCX593 OT-89 FHFCX493 500mA 100mA 100MHZ NPN Transistor 1A 100V sot89 "NPN TRANSISTOR" npn TRANSISTOR SOT89 100v 1a transistor transistor Ib 1A NPN transistor Ic 1A NPN
AA3R Abstract: 2SB772S V/AA3R Text: UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES	Original	PDF	2SB772S 2SB772S 2SD882S OT-223 2SB772SL 2SB772S-AA3-R 2SB772SL-AA3-R OT-223 QW-R207-012 AA3R V/AA3R
RF Transistor s-parameter Abstract: HBFP-0450 ADS MODEL HBFP0450 Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction Hewlett-Packard’s HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in a 4-lead SOT-343 SC-70 surface mount package. Described as a high performance, medium	Original	PDF	HBFP-0450 OT-343 SC-70) 031-inch 5968-2788E RF Transistor s-parameter HBFP-0450 ADS MODEL HBFP0450

2N6718 Abstract: IC350 2N6718L Text: UNISONIC TECHNOLOGIES CO., LTD. 2N6718 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES 1 High Power: 850mW High Current: 1A	Original	PDF	2N6718 2N6718 850mW O-126C 2N6718L 2N6718-T6C-A-K 2N6718L-T6C-A-K O-126C QW-R217-007 IC350 2N6718L
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1-7 OHM MAX This TMOS medium power field effect transistor is designed for	OCR Scan	PDF	OT-223
PCOT Abstract: BCW67f BCW66 bss65 BSV62 BCW65A BCW65B BCW65C BCW66F BCW66G Text: SOT-23 TABLE 2 -S IL IC O N PLANAR MEDIUM POWER TRANSISTORS Devices in this table are suitable for medium current, medium power sw itching and general purpose applications. Ratings and Characteristics at 25 °C ambient temperature. _ _ _ _ _ V /lavimnm □	OCR Scan	PDF	OT-23 BCW65A BCW65B BCW65C BCW66F BCW66G BCW66H BFQ31/31A 2-00t BFS17/17R PCOT BCW67f BCW66 bss65 BSV62
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1.7 OHM MAX This TMOS medium power field effect transistor is designed for	OCR Scan	PDF	MMFT960T1 OT-223 b3b7255
t2406 MOTOROLA Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount MEDIUM POWER TM OS FET 700 mA 240 VOLTS This TM OS medium power field effect transistor is designed for	OCR Scan	PDF	MMFT2406T1 OT-223 b3b755S t2406 MOTOROLA
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM This advanced E -F E T is a TMOS medium power MOSFET	OCR Scan	PDF	OT-223
2SC2340 Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857 Text: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers	OCR Scan	PDF	L427414 r-33-0S NE568 NE56800 operate-69 2SC2340 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
FT-107 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT107T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 250 mA, 200 VOLTS R D S o n = 1 4 0HM MAX This TMOS medium power field effect transistor is designed for	OCR Scan	PDF	MMFT107T1 OT-223 b3b7255 GGT3744 FT-107
2SC2340 Abstract: transistor BJ 102 131 NE56800 2SC2339 NE568 NE56803 NE56853 NE56857 NE56887 ne56853e Text: NEC/ 1SE D CALIFORNIA □42 741 4 0001323 4 r-3 3 -c S NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • H IG H f s : 4.2 G H z The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers	OCR Scan	PDF	L427414 r-33-0S NE568 NE56800 2SC2340 transistor BJ 102 131 NE56800 2SC2339 NE56803 NE56853 NE56857 NE56887 ne56853e
Untitled Abstract: No abstract text available Text: SCS'THOMSON RfflDœiilLICTMDei STZT5550 STZT5551 MEDIUM POWER AMPLIFIER . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING ciRCurrs . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL	OCR Scan	PDF	STZT5550 STZT5551 STZT5400 STZT5401 P008B

MEDIUM POWER TRANSISTOR Search Results

MEDIUM POWER TRANSISTOR Result Highlights (5)

MEDIUM POWER TRANSISTOR Datasheets (1)

MEDIUM POWER TRANSISTOR Datasheets Context Search

TBD438

bipolar transistor ghz s-parameter

7333 A

Power Transistors TO-126 Case

TEA15xx-series

Thomson-CSF POLYESTER capacitors

BC237

Medium Power Bipolar Transistors

2N5322 2N5320

NTE315

PNP TRANSISTOR "SOT89"

NPN Transistor 1A 100V

AA3R

RF Transistor s-parameter

2N6718

Untitled

PCOT

Untitled

t2406 MOTOROLA

Untitled

2SC2340

FT-107

2SC2340

Untitled