LP133X3
Abstract: MP-98703NM-AO-354-2 lp133 ES1978 LP133X4 MP-98703NM-FO-354-2 3F7 DIODE Insyde bios tdk inv lcd 7931B
Text: Specifications Processor Module - Intel Mobile Pentium III 450/500/600/650 MHz with SpeedStep technology Memory - Provide 64-bit data bus system memory - Two PC 100, 144 pin SODIMM sockets, support 3.3V Sync DRAM SODIMM - Expandable memory up to 256MB, depend on 32/64/128 MB SODIMM Module
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64-bit
256MB,
256KB
29F020)
100MHz)
1024x768x16M
1280x1024x16M
LC80-31B08-7GI-1
80-31B08-7GJ-1
LP133X3
MP-98703NM-AO-354-2
lp133
ES1978
LP133X4
MP-98703NM-FO-354-2
3F7 DIODE
Insyde bios
tdk inv lcd
7931B
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nvidia chip
Abstract: nForce2 nvidia nforce2 NVIDIA nForce nForce2 SPP nFORCE nForce2 IGP NVIDIA NVIDIA nForce 4 NVIDIA nForce application
Text: Technical Brief NVIDIA nForce2 Memory Architecture A Scalable, Synchronous, DualDDR Design nForce2 Memory Architecture Due to the proliferation of digital consumer electronic devices, PC digital media authoring applications, and the increasing availability of high bandwidth network
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b796
Abstract: EF86 F66B B745 MOTOROLA CD3000 ec71 EFD8 transistor C618 AN2153 M68HC11
Text: Freescale Semiconductor Freescale Semiconductor, Inc. Semiconductor Products Sector Application Note Order this document by AN2153/D AN2153 A Serial Bootloader for Reprogramming the MC9S12DP256 FLASH Memory By Gordon Doughman Field Applications Engineer, Software Specialist
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AN2153/D
AN2153
MC9S12DP256
M68HC12
16-bit
b796
EF86
F66B
B745 MOTOROLA
CD3000
ec71
EFD8
transistor C618
AN2153
M68HC11
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ef84
Abstract: EF86 b745 diode ef98 EFD8 f64b b796 CD3000 ec71 ece5
Text: Freescale Semiconductor, Inc. Order this document by AN2153/D AN2153 Freescale Semiconductor, Inc. Semiconductor Products Sector Application Note A Serial Bootloader for Reprogramming the MC9S12DP256 FLASH Memory By Gordon Doughman Field Applications Engineer, Software Specialist
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AN2153/D
AN2153
MC9S12DP256
M68HC12
16-bit
ef84
EF86
b745 diode
ef98
EFD8
f64b
b796
CD3000
ec71
ece5
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Untitled
Abstract: No abstract text available
Text: EVALUATION KIT AVAILABLE 71M6543FT/71M6543HT General Description The 71M6543FT/71M6543HT 71M654x are 4th-generation three-phase metering systems-on-chips (SoCs) with a 5MHz, 8051-compatible MPU core, low-power RTC with digital temperature compensation, flash memory,
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71M6543FT/71M6543HT
71M654x)
8051-compatible
22-bit
32-bit
71M654x
71M6x03
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MOLEX 39-00-0038
Abstract: No abstract text available
Text: 505 SERIES Multi-Turn Rotary Position Sensor TYPICAL APPLICATIONS: Memory seat, lumbar position and similar applications where a multi-turn sensor is required Features/Benefits: • Thru-hole and shaft drive versions • Compact size • Single output - Analog
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Tota248-359-2687
124Europe
MOLEX 39-00-0038
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54S287
Abstract: HARRIS SEMICONDUCTORS QML MARKING 7611 harris 93417 prom 7611 prom SL82S129
Text: INCH-POUND MIL-M-38510/203E 18 September 2007 SUPERSEDING MIL-M-38510/203D 19 January 2006 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON Inactive for new design after 24 July 1995
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MIL-M-38510/203E
MIL-M-38510/203D
CDKB/18324
CFJ/07263
CCXP/27014
CDWO/34371
CECD/50364
54S287
HARRIS SEMICONDUCTORS QML MARKING
7611 harris
93417 prom
7611 prom
SL82S129
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Untitled
Abstract: No abstract text available
Text: INCH-POUND MIL-M-38510/210F 19 June 2013 SUPERSEDING MIL-M-38510/210E 27 March 2006 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 16,384 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON Inactive for new design after 24 July 1995
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MIL-M-38510/210F
MIL-M-38510/210E
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77s191
Abstract: Signetics 82S191
Text: INCH-POUND MIL-M-38510/210E 27 March 2006 SUPERSEDING MIL-M-38510/210D 16 May 1986 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 16,384 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON Inactive for new design after 24 July 1995
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MIL-M-38510/210E
MIL-M-38510/210D
MIL-M-38510/210E
77s191
Signetics 82S191
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signetics PROM
Abstract: monolithic memories 5330
Text: INCH-POUND MIL-M-38510/207E 5 October 2007 SUPERSEDING MIL-M-38510/207D 16 February 2007 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 256-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON Inactive for new design after 24 July 1995
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MIL-M-38510/207E
MIL-M-38510/207D
256-BIT,
signetics PROM
monolithic memories 5330
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54s571
Abstract: signetics memories bipolar SL82S SL82
Text: INCH-POUND MIL-M-38510/204F 21 September 2009 SUPERSEDING MIL-M-38510/204E 02 November 2005 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 2048-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON Inactive for new design after 24 July 1995
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MIL-M-38510/204F
MIL-M-38510/204E
2048-BIT,
54s571
signetics memories bipolar
SL82S
SL82
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Untitled
Abstract: No abstract text available
Text: INCH-POUND MIL-M-38510/209F 15 April 2013 SUPERSEDING MIL-M-38510/209E 23 February 2006 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 8192-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON Inactive for new design after 24 July 1995
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MIL-M-38510/209F
MIL-M-38510/209E
8192-BIT,
MIL-PRF-38535.
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77S185
Abstract: mil-prf 38510 cross index 77S180 77S184 marking 209e
Text: INCH-POUND MIL-M-38510/209E 23 February 2006 SUPERSEDING MIL-M-38510/209D 30 September 1986 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 8192-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON Inactive for new design after 24 July 1995
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MIL-M-38510/209E
MIL-M-38510/209D
8192-BIT,
MIL-PRF-38535.
77S185
mil-prf 38510 cross index
77S180
77S184
marking 209e
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GLT4160M04-60J3
Abstract: GLT4160M04-60TC GLT4160M04-70J3 GLT4160M04-70TC GLT4160M04E-60J3 GLT4160M04E60TC GLT4160M04E-70J3 GLT4160M04E70TC
Text: G -LINK GLT4160M04 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Jan 2000 Rev. 1.3 Features : Description : ∗ ∗ ∗ ∗ The GLT4160M04 is a highperformance CMOS dynamic random access memory containing 16,777,216 bits organized in a x4 configuration. The
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GLT4160M04
GLT4160M04
2048-cycle
GLT44016-40J4
256Kx16
400mil
GLT4160M04-60J3
GLT4160M04-60TC
GLT4160M04-70J3
GLT4160M04-70TC
GLT4160M04E-60J3
GLT4160M04E60TC
GLT4160M04E-70J3
GLT4160M04E70TC
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GLT4160M04-60J3
Abstract: GLT4160M04-70J3 GLT4160M04-80J3 GLT4160M04E-60J3 GLT4160M04E-70J3 GLT4160M04E-80J3 GLT4160M04S-60J3 GLT4160M04S-70J3 GLT4160M04S-80J3
Text: G -LINK GLT4160M04 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Nov. 2001 Rev. 2.1 Features : Description : ∗ ∗ ∗ ∗ The GLT4160M04 is a highperformance CMOS dynamic random access memory containing 16,777,216 bits organized in a x4 configuration. The
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GLT4160M04
GLT4160M04
2048-cycle
300mil
GLT4160M04-60J3
GLT4160M04-70J3
GLT4160M04-80J3
GLT4160M04E-60J3
GLT4160M04E-70J3
GLT4160M04E-80J3
GLT4160M04S-60J3
GLT4160M04S-70J3
GLT4160M04S-80J3
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AN2153
Abstract: M68HC11 M68HC12 MC9S12DP256 0000FFA8 5B30
Text: Order this document by AN2153/D AN2153 Semiconductor Products Sector Application Note A Serial Bootloader for Reprogramming the MC9S12DP256 FLASH Memory By Gordon Doughman Field Applications Engineer, Software Specialist Dayton, Ohio Introduction The MC9S12DP256 is a member of the M68HC12 Family of 16-bit
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AN2153/D
AN2153
MC9S12DP256
M68HC12
16-bit
AN2153
M68HC11
0000FFA8
5B30
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bipolar rom 256*4
Abstract: prom 256x4 bit signetics 1016 82S226 82S229
Text: sggnotiBS 1024-BIT BIPOLAR READ ONLY MEMORY 256x4 ROM FEBRUARY 1975 82S226 82S229 DIGITAL 8000 SERIES TTL/MEMORY DESCRIPTION PIN CONFIGURATION Th e 82S226 (Open Collector Outputs) and the 82S229 (Tri-State Outputs) are Bipolar 1024-Bit Read O n ly Mem
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1024-BIT
256x4
82S226
82S229
82S226
82S229
82S126/129,
bipolar rom 256*4
prom 256x4 bit
signetics 1016
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1024-BIT
Abstract: 1024bit 82S226 82S229 signetics memories bipolar
Text: sggnotiBS 1024-BIT BIPOLAR READ ONLY MEMORY 256x4 ROM F E B R U A R Y 1975 82S226 82S229 DIGITAL 8000 SERIES TTL/MEMORY PIN CONFIGURATION DESCRIPTION Th e 82S226 (Open Collector Outputs) and the 82S229 (Tri-State Outputs) are Bipolar 1024-Bit Read O n ly Mem
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OCR Scan
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1024-BIT
256x4
82S226
82S229
82S226
82S229
82S126/129,
1024bit
signetics memories bipolar
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Z80000
Abstract: ABOTT Zilog Z80 family zilog z80 processor MARKING W1 AD nitto GE rr24 002 TDA 120t Z80 CPU Z9516
Text: P ro d u c t S p e c ific a tio n October 1988 Z80,000 CPU FEATURES • Full 32-bit architecture and implementation ■ 4G billion bytes of directly addressable memory in each of four address spaces ■ Linear or segmented address space ■ Virtual memory management integrated with CPU
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32-bit
Z8000
Z80000
ABOTT
Zilog Z80 family
zilog z80 processor
MARKING W1 AD
nitto GE
rr24 002
TDA 120t
Z80 CPU
Z9516
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M24 grade 8.8
Abstract: No abstract text available
Text: PRELIMINARY IDT7MB6136 IDT7MB6146 IDT7MB6156 128K x 18, 64K x 18 , 32K x 18 CMOS DUAL-PORT RAM SHARED MEMORY MODULE I n t e g r a t e d D e v ic e T e c h n o lo g y , I n c . FEATURES: DESCRIPTION: • High density 2 megabit/1 megabit/512K-bit CMOS DualPort static RAM (shared memory modules)
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IDT7MB6136
IDT7MB6146
IDT7MB6156
megabit/512K-bit
18-bit
B6136/6146/6156
28K/64K/32K
7MB6136
7MB6146
7MB6156
M24 grade 8.8
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intel 27010 eprom
Abstract: No abstract text available
Text: INTEL CORP Intel* MEMORY/LOGIC 50E D • 4fiS bl7b O O b t Ja M l4 5 ■ /3 -2 9 27010 1M (128K x 8) BYTE-WIDE EPROM ■ Compatible with 28-Pin JEDEC EPROMs: 27256, 27512 ■ Complete Upgrade Capability — PGM “Don’t Care” Status Allows Wiring in Higher Order Addresses
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28-Pin
intel 27010 eprom
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N82S181
Abstract: 82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330
Text: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.
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8192-BIT
1024x8)
82S180
/82S181
82S180
82S181
N82S181
N82S141
74S200
mmi 3601
6331-1 prom
tbp24sa10
93427C
n82s147
MMI 6330
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74s188 programming
Abstract: 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions
Text: The E ngineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Memory Data Book y for \ T exas In Design Engineers s t r u m e n t s >le of Contents • Alphanumeric Index • GENERAL INFORMATION Selection Guides • Glossary INTERCHANGEABILITY GUIDE
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38510/MACH
MIL-M-38510
74s188 programming
74S471
N82S06
74S470
dip18 package
str 52100
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
74S472 PROM PROGRAMMING
8080a
74S287 programming instructions
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FZL 141
Abstract: FZL 141 S EPROM 27c010 fzl 131 27010 eprom 27C010
Text: Philips Com ponents-Signetics D ocum ent No. ECN No. 27C010 1 MEG CMOS EPROM 128K x 8 Date o f Issue November 1990 S tatus Preliminary Specification Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES Philips Components-Signetics 27C010 CMOS EPROM is a 1,048,576-bit 5V
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27C010
27C010
576-bit
75msec
FZL 141
FZL 141 S
EPROM 27c010
fzl 131
27010 eprom
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