LF44xx
Abstract: LF4460 full hd video processor LF4415 "Frame rate conversion"
Text: LF4460 LF4430 LF4415 PRELIMINARY Video Memory / FIFO FRAME MEMORY Features Selectable I/O VDD = 1.8V, 2.5V, 3.3V Selectable Core VDD = 1.8V, 2.5V, 3.3V 172 ball FBGA package 15 x 15 x 1.4mm Depth expansion is supported for Multi-frame HDTV, Multiframe SDTV, and other formats:
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LF4460
LF4430
LF4415
60Mbit
150MHz
LDS-44xx-A
LF44XX
LF4460
full hd video processor
LF4415
"Frame rate conversion"
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2388
Abstract: 8051 microcontroller pdf free download MSU2031 MSU2051 U2031
Text: MOSEL VITELIC MOSEL VITELIC INC. MSU2031 Preliminary October 1996 8 - Bit Microcontroller Features General 8051 family compatible 64 K byte External Memory 8 bit bus I/O ports ROM less for U2031 128 byte RAM Two 16 bit Timers Event Counters 128 byte depth stack
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MSU2031
U2031
U2031
PID251*
2388
8051 microcontroller pdf free download
MSU2031
MSU2051
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C451
Abstract: C4517 CY7C451 CY7C453
Text: CY7C451 CY7C453 512 x 9 Cascadable Clocked and 2K x 9 Cascadable Clocked FIFOs with Programmable Flags Features D Functional Description 512 x 9 CY7C451 and 2,048 x 9 (CY7C453) FIFO buffer memory D D Expandable in width and depth HighĆspeed 70ĆMHz standalone;
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CY7C451
CY7C453
CY7C451)
CY7C453)
70MHz
50MHz
C451
C4517
CY7C451
CY7C453
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KRL Electronics
Abstract: No abstract text available
Text: KM75C03A CMOS FIFO First-in First-out FIFO 2048x9 CMOS Memory FEATURES DESCRIPTION • First-in, First-out dual port memory — 2048 x 9 organization • Very high speed independent of depth/width — 20ns cycle times • Asynchronous and simultaneous read and write
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KM75C03A
2048x9
datC03A
KM75C03A
600mil)
32-PIN
KRL Electronics
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Untitled
Abstract: No abstract text available
Text: AC725 • ACT725 54AC/74AC725 • 54ACT/74ACT725 512 x 9 First-In, First-Out Memory FIFO D escription The 512 x 9 FIFO is a first-in, first-out dual port memory capable of asynchronous, simultaneous read and write. Other important features are: expansion capability in both the word depth and
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AC725
ACT725
54AC/74AC725
54ACT/74ACT725
8888K
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Untitled
Abstract: No abstract text available
Text: KM75C02A CMOS FIFO First-in First-out FIFOj 1024 x 9 CMOS Memory FEATURES DESCRIPTION • First-in, First-out dual port memory — 1024 x 9 organization • Very high speed independent of depth/width — 25ns cycle times • Asynchronous and simultaneous read and write
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KM75C02A
150mA
KM75C02A
IDT7202A.
75C02A
32-PIN
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D • T'ìbMlMa Q0142ß7 G3T PRELIMINARY KM75C04A CMOS FIFO First-in First-out FIFO 4 K x 9 CMOS Memory FEATURES DESCRIPTION • First-in, First-out dual port memory — 4K x 9 organization • Very high speed independent of depth/width
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Q0142Ã
KM75C04A
150mA
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM75C04A CMOS FIFO First-in First-out FIFO 4 K x 9 CMOS Memory FEATURES DESCRIPTION • First-in, First-out dual port memory — 4K x 9 organization • Very high speed independent of depth/width — 25ns cycle times • Asynchronous and simultaneous read and write
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KM75C04A
150mA
KM75C04A
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KM75C01
Abstract: No abstract text available
Text: KM75C01A CMOS FIFO First-in First-out FIFO 5 1 2 x 9 CMOS Memory FEATURES DESCRIPTION • First-in, First-out dual port memory — 512 x 9 organization • Very high speed independent of depth/width 25ns cycle times • Asynchronous and simultaneous read and write
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KM75C01A
T7201A
KM75C01A
600mil)
300mil)
32-PIN
KM75C01
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Untitled
Abstract: No abstract text available
Text: CMOS FIFO KM75C03A First-in First-out FIFO 2 0 4 8 x 9 CMOS Memory FEATURES DESCRIPTION • First-in, First-out dual port memory — 2048 x 9 organization • Very high speed independent of depth/width — 25ns cycle times • Asynchronous and simultaneous read and write
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KM75C03A
150mA
KM75C03A
32-PIN
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C26K
Abstract: No abstract text available
Text: KM75C03A CMOS FIFO First-in First-out FIFO 2 0 4 8 x 9 CMOS Memory FEATURES DESCRIPTION • First-in, First-out dual port memory — 2048 x 9 organization • Very high speed independent o f depth/width — 20ns cycle times • Asynchronous and simultaneous read and write
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KM75C03A
150mA
KM75C03A
emp15.
Q9-Q17
D18-DN
C26K
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MK4501N-80
Abstract: MK4501-15 MK4501N-12 MK4501N-15 mostek 4501 4501 d 9l reset MK4501N-65 Scans-004797 MK4501N-10
Text: 512 x 9 C M O S B iP O R T FIFO MEMORY COMPONENTS FEATURES □ First-In, First-Out Memory Based Architecture □ Flexible 512 x 9 organization □ Low Power HCMOS technology □ Asynchronous and simultaneous read/write □ Bidirectional applications □ Fully expandable by word width or depth
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MK4501-65
MK4501-80
MK4501-10
MK4501-12
MK4501-15
MK4501-20
MK4501
MK4501N-65
MK4501N-80
MK4501N-10
MK4501N-12
MK4501N-15
mostek 4501
4501 d
9l reset
Scans-004797
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Untitled
Abstract: No abstract text available
Text: KM75C01A CMOS FIFO First-in First-out FIFO 5 1 2 x 9 CMOS Memory FEATURES DESCRIPTION • First-in, First-out dual port memory — 5 1 2 x 9 organization • Very high speed independent of depth/width — 25ns cycle tim es • Asynchronous and simultaneous read and_ write
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KM75C01A
150mA
KM75C01A
MK4501
IDT7201A
32-PIN
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4AC17
Abstract: texas instruments fifo cascaded SN74ACT7808
Text: SN74ACT7808 2048 x 9 STROBED FIRST-IN, FIRST-OUT MEMORY _SCAS205B - FEBRUARY 1991 - REVISED SEPTEMBER 1995 Load Clocks and Unload Clocks Can Be Asynchronous or Coincident * 2048 Words by 9 Bits • Expansion Logic for Depth Cascading 9 Empty, Full, and Half-Full Flags
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SN74ACT7808
2048-word
4AC17
texas instruments fifo cascaded
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Untitled
Abstract: No abstract text available
Text: CY7C420, CY7C421 CY7C424, CY7C425 CY7C428, CY7C429 W" ‘ *K- CYPRESS SEMICONDUCTOR Features • 512 x 9,1,024 x 9,2,048 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 33.3-MHz read/write independent of depth/width
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CY7C420,
CY7C421
CY7C424,
CY7C425
CY7C428,
CY7C429
300-mil
CY7C421,
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Untitled
Abstract: No abstract text available
Text: KM75C102A CMOS PROGRAMMABLE FLAG FIFO Programmable-Flags, 1KX9 FIFO FEATURES DESCRIPTION • First-In-First-Out Dual Port Memory —1K x 9 Organization • Very High Speed independent of depth/width — 30ns Cycle Time • Two Fully configurable Almost Full and Almost
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KM75C102A
120mA
32-Pin
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AM7202A
Abstract: PDW028
Text: Am7202A Advanced Micro Devices High Density First-In First-Out FIFO 1024 x 9-Bit CMOS Memory DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ Status flags—full, half-full, empty Retransmit capability Expandable In both width and depth Increased noise immunity for xF—CMOS
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Am7202A
15491b-18
PDW028
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Untitled
Abstract: No abstract text available
Text: KM75C103A CMOS PROGRAMMABLE FLAG FIFO Programmable-Flag$, 2 K X 9 FIFO FEATURES DESCRIPTION • FirsMn-Flrst-Out Dual Port Memory —2K x 9 Organization • Vary High Speed independent of depth/width —30ns Cycle Time • Two Fully configurable Almost Full and Almost
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KM75C103A
--30ns
120mA
32-Pin
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t-1549
Abstract: AM7202A PDW028
Text: Am7202A Advanced Micro Devices High Density First-In First-Out FIFO 1024 x 9-Bit CMOS Memory DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ Status flags—full, half-full, empty Retransmit capability Expandable In both width and depth Increased noise immunity for xF—CMOS
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Am7202A
15491b-18
t-1549
PDW028
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Untitled
Abstract: No abstract text available
Text: KM75C102A CMOS PROGRAMMABLE FLAG FIFO Programmable-Flags, 1 KX9 FIFO FEATURES DESCRIPTION • First-In-First-Out Dual Port Memory — 1K x 9 Organization • Very High Speed independent of depth/width —30ns Cycle Time • Two Fully configurable Almost Full and Almost
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KM75C102A
120mA
32-Pin
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a7w 511
Abstract: A7W 19 a7w 3 PIN a7w 16 AM7201 AM7201-25 AM7201-35 AM7201-50 PDW028 75G-14
Text: a Am7201 Advanced Micro Devices High Density First-In First-Out FIFO 512 x 9-Bit CMOS Memory DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ Status flags—full, half-full, empty Retransmit capability Expandable In both width and depth Increased noise Immunity forXF—CMOS
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Am7201
10175G-20
a7w 511
A7W 19
a7w 3 PIN
a7w 16
AM7201-25
AM7201-35
AM7201-50
PDW028
75G-14
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D8203
Abstract: No abstract text available
Text: KM75C101A CMOS PROGRAMMABLE FLAG FIFO Programmable-Flags, 5 1 2 X 9 FIFO FEATURES DESCRIPTION • First-ln-First-Out Dual Port Memory —512x9 Organization • Very High Speed independent of depth/width —30ns Cycle Time • Two Fully configurable Almost Full and Almost
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KM75C101A
--512x9
--30ns
120mA
32-Pin
D8203
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Untitled
Abstract: No abstract text available
Text: CY7C451 CY7C453 m r cypress Functional Description Features • 512 x 9 CY7C451 and 2,048 x 9 (CY7C453) FIFO buffer memory • Expandable in width and depth • High-speed 70-MHz standalone; 50-MHz cascaded • Supports free-running 50% duly cycle clock inputs
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CY7C451
CY7C453
CY7C451)
CY7C453)
70-MHz
50-MHz
300-mil
32-pin
DD15475
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M7202A
Abstract: No abstract text available
Text: Am7202A Advanced Micro Devices High Density First-In First-Out FIFO 1024 x 9-Bit CMOS Memory DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ Status flags—full, half-full, empty Retransmit capability Expandable In both width and depth Increased noise immunity for xF—CMOS
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Am7202A
15491B-18
M7202A
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