FBGA-60
Abstract: FBGA60 fbga60 package
Text: New Products MBM29BS64LF 64M-bit x16 Burst Mode Flash Memory MBM29BS64LF FUJITSU has developed a new burst mode flash memory device operating with a 1.8 V single power supply. This device incorporates an original FUJITSU sense system that reduces the current consumption (mean value in the standby mode)
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MBM29BS64LF
64M-bit
64M-bit
fMBM29BSxxx
128M-bit
MBM29BS64LF,
FBGA-60
FBGA60
fbga60 package
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direct rdram rambus
Abstract: RDRAM Clock rambus channel fujitsu rdram
Text: September 1992 Edition 1.1 fujÍtsu DATA SHEET MB814953 4.5 MBIT RDRAM W DESCRIPTION The MB814953 is a new generation ultra high speed CMOS Rambus™ DRAM organized as 512KX9. The MB814953 uses advanced circuit design techniques with standard CMOS process technology. It utilizes the 18,432 sense amplifiers as a
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MB814953
512KX9.
MB814953-P
KV0005-929K1
direct rdram rambus
RDRAM Clock
rambus channel
fujitsu rdram
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CoolRunner
Abstract: memory device sense amplifier
Text: Fast Zero Power Traditional CPLDs • CPLDs migrated from Bipolar to CMOS – Easier platform to design upon – Lower power consumption – Continued to use the same Bipolar design technique to implement Product Terms • Product Term Construction Sense Amplifier
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100mV
CoolRunner
memory device sense amplifier
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K4004
Abstract: SN75361* equivalent SN75361A SN75107 SN55109A
Text: SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity
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SN75207B
SLLS096C
SN75107A
SN75107B
10-mV
SN7520S
SLYT012A
SLYT010A
SLLA067
K4004
SN75361* equivalent
SN75361A
SN75107
SN55109A
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base station receiver GSM
Abstract: adaptive analog filter potentiometer potentiometer, 10 k, 10 turn potentiometer RESISTOR POTENTIOMETER X9470 X9470V24I
Text: X9470 IGNS E W DES N R O F N DED EM ENT COMME RE PL AC D E N OT R E D N E enter at MM Data Sheet PRELIMINARY port C p u S O R E CO l N a m/tsc nic our Tech r www.intersil.co t c ta n o c o TERSIL 1-888-IN March 8, 2005 FN8204.0 RF Power Amplifier PA Bias Controller
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X9470
FN8204
X9470
base station receiver GSM
adaptive analog filter potentiometer
potentiometer, 10 k, 10 turn potentiometer
RESISTOR POTENTIOMETER
X9470V24I
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SN55109A
Abstract: 1N916 207B SN55110A SN75107A SN75107B SN75207B SN75361A SN75452B
Text: SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity
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SN75207B
SLLS096C
SN75107A
SN75107B
10-mV
SN75207B
SN55109A
1N916
207B
SN55110A
SN75361A
SN75452B
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SN55109A
Abstract: SN75361A 1N916 207B SN55110A SN75107A SN75107B SN75207B SN75452B SN75107
Text: SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity
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SN75207B
SLLS096C
SN75107A
SN75107B
10-mV
SN75207B
SN55109A
SN75361A
1N916
207B
SN55110A
SN75452B
SN75107
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G37 IC
Abstract: SN55109A
Text: SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C - JULY 1973 - REVISED MARCH 1997 Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics N PACKAGE TOP VIEW ±10-mV Input Sensitivity 1A[ 1
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SN75207B
SLLS096C
SN75107A
SN75107B
10-mV
i02fl
G37 IC
SN55109A
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MC3430
Abstract: DS1651J DS3651 DS3651J DS3651N J16A N16A 2DS1651
Text: DS1651/DS3651 Quad High Speed MOS Sense Amplifiers General Description Features The DS1651/DS3651 is TTL compatible high speed circuits intended for sensing in a broad range of MOS memory system applications. Switching speeds have been enhanced over conventional sense amplifiers by application of Schottky technology, and TRI-STATE strobing is incorporated, offering a high impedance output state for bused organization.
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DS1651/DS3651
DS1651/DS3651
MC3430
DS1651J
DS3651
DS3651J
DS3651N
J16A
N16A
2DS1651
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SN75107
Abstract: SN55109A
Text: SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity
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SN75207B
SLLS096C
SN75107A
SN75107B
10-mV
SN7520
SN75107
SN55109A
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SN55109A
Abstract: 1N916 207B SN75107A SN75107B SN75207 SN75207B SN75361A SN75452B SN75361
Text: SN75207, SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096B – JULY 1973 – REVISED MAY 1995 • • • • • • • • • • • Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics
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SN75207,
SN75207B
SLLS096B
SN75107A
SN75107B
10-mV
SN75207B
SN55109A
1N916
207B
SN75207
SN75361A
SN75452B
SN75361
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SN55109A
Abstract: 1N916 207B SN75107A SN75107B SN75207 SN75207B SN75361A SN75452B SN75107
Text: SN75207, SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096B – JULY 1973 – REVISED MAY 1995 • • • • • • • • • • • Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics
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SN75207,
SN75207B
SLLS096B
SN75107A
SN75107B
10-mV
SN75207B
SN55109A
1N916
207B
SN75207
SN75361A
SN75452B
SN75107
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SN55109A
Abstract: 1N916 207B SN75107A SN75107B SN75207 SN75207B SN75361A SN75452B
Text: SN75207, SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096B – JULY 1973 – REVISED MAY 1995 • • • • • • • • • • • Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics
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SN75207,
SN75207B
SLLS096B
SN75107A
SN75107B
10-mV
SN75207B
SN55109A
1N916
207B
SN75207
SN75361A
SN75452B
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intel 8055
Abstract: BPK70 intel 7242
Text: in te i 7242 DUAL FORMATTER/SENSE AMPLIFIER FOR BUBBLE MEMORIES FIFO Data Block Buffer Error Detection/Correction Done Automatically Dual Channel Daisy-Chained Selects for Multiple Bubble Memory Systems On-Chip Sense Amplifiers MOS N-Channel Technology Automatically Handles Redundant
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20-Pin
tcYC-11
AFN-01358A
AFN-01358A
intel 8055
BPK70
intel 7242
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X9470
Abstract: X9470V24I
Text: Preliminary Information RF Power Amplifier PA Bias Controller X9470 DESCRIPTION • Programmable Bias Controller IC for Class A and AB LDMOS Power Amplifiers • Adaptive System on Chip Solution • Bias Current Calibration to better than ±4% using Reference Trim DCP
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X9470
X9470
X9470V24I
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sn75361
Abstract: SN55109A
Text: SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity
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SN75207B
SLLS096C
SN75107A
SN75107B
10-mV
SN7520i
sn75361
SN55109A
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SN55109A
Abstract: No abstract text available
Text: SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity
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SN75207B
SLLS096C
SN75107A
SN75107B
10-mV
SN75207B
SN55109A
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RTI Electronics
Abstract: instrumentation amplifier 524RP memory device sense amplifier
Text: PRELIMINARY SPACE ELECTRONICS INC. PRECISION INSTRUMENTATION AMPLIFIER SPACE PRODUCTS 524RP -INPUT -INPUT 1 16 RG1 +INPUT 2 15 OUTPUT NULL RG2 3 14 OUTPUT NULL INPUT NULL 4 13 G=10 INPUT NULL 5 12 G=100 REF. 6 11 -Vs 7 +Vs 8 1 PROTECTION - + + 4.44kΩ G=10
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524RP
F16-01
99Rev0
RTI Electronics
instrumentation amplifier
524RP
memory device sense amplifier
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DS3651-2
Abstract: DS3653
Text: DS1651,DS3651 DS1651/DS3651 Quad High Speed MOS Sense Amplifiers Literature Number: SNLS371 DS1651/DS3651 Quad High Speed MOS Sense Amplifiers General Description Features The DS1651/DS3651 is TTL compatible high speed circuits intended for sensing in a broad range of MOS memory system applications. Switching speeds have been enhanced
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DS1651
DS3651
DS1651/DS3651
SNLS371
DS3651-2
DS3653
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51G12
Abstract: SN75207 SN55109A
Text: SN75207, SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096B - JULY 1973 - REVISED MAY 1995 Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ±10-mV Input Sensitivity TTL-Compatible Circuitry
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SN75207,
SN75207B
SLLS096B
SN75107A
SN75107B
10-mV
SN75207
SN55109A,
SN75109A,
51G12
SN55109A
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PDF
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Untitled
Abstract: No abstract text available
Text: 55/75S20 • 55/75S24 • 55/75S234 DUAL SCHOTTKY CORE MEMORY SENSE AMPLIFIERS FAIRCHILD LINEAR INTEGRATED CIRCUITS GENERAL DESCRIPTION — The 55/75S20 series of Schottky sense amplifiers are designed for use with high-speed core memory systems, where a guaranteed narrow threshold uncertainty of ±2.5 mV is guaran
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55/75S20
55/75S24
55/75S234
55/75S20
75S20
75S24
55/75S234
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LD 7522
Abstract: LA 7522 diagram an 7522
Text: signotics DUAL GORE SENSE MEMORY AMPLIFIERS LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The 7520 Series Dual Core M em ory Sense A m p lifie rs are designed fo r use in high speed core m em ory systems. Three separate logic config ura tions allow fle x ib ility o f
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MC3430P
Abstract: MC3430
Text: Order this document by MC3430/D MC3430, MC3431 Quad, Differential Voltage Comparator/Sense Amplifiers The MC3430 thru MC3433 high speed comparators are ideal for applications as sense amplifiers in MOS memory systems. They are specified in a unique way which combines the effects of input offset voltage,
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MC3430/D
MC3430,
MC3431
MC3430
MC3433
MC3431
MC3430/D*
MC3430P
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DAP 07
Abstract: LM4840 LM4840LQ LM4840MH LM4840MT LQA028A PC99
Text: LM4840 Stereo 2W Audio Power Amplifiers with Digital Volume Control and Input Mux General Description Key Specifications The LM4840 is a monolithic integrated circuit that provides digital volume control and stereo bridged audio power amplifiers capable of producing 2W into 4Ω Note 1 with less
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LM4840
LM4840
DAP 07
LM4840LQ
LM4840MH
LM4840MT
LQA028A
PC99
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