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Abstract: No abstract text available
Text: www.BT2000.co.uk +44 0 118 9324600 INNOVATIVE ELECTRONIC SOLUTIONS Fukushima Futaba Electric Co Ltd Futaba, Futaba, based in Fukushima, Fukushima, Japan, was established in 1964 as a Metal Oxide Oxide Film Resistor manufacturer. They have now expanded into the production of ceramic substrates
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IC 7555 datasheet
Abstract: 7555 ic
Text: MIS/MOS Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor For applications in RF, Microwave and GHz ranges, AVX offers MIS/MOS Capacitors. These are Single Layer Capacitors SLCs that use Silicon Nitride or Silicon Dioxide to
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S-MOS00M1006-N
IC 7555 datasheet
7555 ic
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Untitled
Abstract: No abstract text available
Text: MIS/MOS Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor For applications in RF, Microwave and GHz ranges, AVX offers MIS/MOS Capacitors. These are Single Layer Capacitors SLCs that use Silicon Nitride or Silicon Dioxide to
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epcos
Abstract: No abstract text available
Text: EPCOS Worldwide Addresses EPCOS Deutschlandsberg, Austria EPCOS in Deutschlandsberg, headquarters of the Ceramic Components Division, is the center of competence for metal oxide varistors, thermistors, ceramic capacitors, microwave ceramics and sensor technology.
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MOV surge protection circuit diagram
Abstract: offline UPS Varistor LED 150v varistor 220-240v varistor delta UPS circuit diagram MOVs application varistor tco thermal cutoff Thermal Cutoffs
Text: APPLICATION NOTES Designing with thermally protected TMOV Varistors in TVSS Applications Introduction Metal Oxide Varistors MOVs are commonly used to suppress transients in many applications such as: Transient Voltage Surge Suppressors (TVSS), Uninterruptible
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VARISTOR k275
Abstract: capacitor S14 k275 varistor s14 k420 varistor k35 S14 K275 k275 VDR SURGE ARRESTER EPCOS 230 07 0 capacitor S14 k275 08 18 07 k275 varistor VARISTOR s14 K30
Text: US_aussen_BD.qxd 20.12.2007 13:33 Uhr Seite 1 EPCOS Data Book 2008 SIOV Metal Oxide Varistors b y E P C O S A G • C o r p o r a t e C e n t e r Edition 11/2007 · Ordering No. EPC:62006-7600 · Printed in Germany · DB 11078. 2008 P u b l i s h e d SIOV Metal Oxide Varistors
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MOV surge protection circuit diagram
Abstract: 220-240v varistor 150v varistor circuit diagram for mov mov 6kv 3ka varistor mov 250 ac 220-240V delta UPS circuit diagram varistor fail
Text: Designing with thermally protected TMOV Varistors in TVSS Applications Application Notes Introduction Metal Oxide Varistors MOVs are commonly used to suppress transients in many applications such as: Transient Voltage Surge Suppressors (TVSS), Uninterruptible Power Supplies (UPS),
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EC-635
MOV surge protection circuit diagram
220-240v varistor
150v varistor
circuit diagram for mov
mov 6kv 3ka
varistor
mov 250 ac
220-240V
delta UPS circuit diagram
varistor fail
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MIL-C-83513
Abstract: No abstract text available
Text: MOV Planar Arrays Multilayer Varistor Planar Arrays The MOV Metal Oxide Varistor Planar Array is an application specific component designed for use in multi-line EMI filter circuits typically found in filtered connectors. Capability Voltage Source Limited
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Leach Relay Reliability
Abstract: soil "electrical conductivity" 10T2 AN92 AN9211 Transient Voltage Suppression Devices, Harris
Text: Soldering Recommendations for Surface Mount and Multilayer Metal Oxide Varistors Application Note July 1999 AN9211.2 Introduction In recent years, electronic systems have migrated towards [ /Title the manufacture of increased density circuits, with the same
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AN9211
DB450.
Leach Relay Reliability
soil "electrical conductivity"
10T2
AN92
Transient Voltage Suppression Devices, Harris
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MIL-STD-883 Method 2019
Abstract: No abstract text available
Text: MOS Cap Metal Oxide Semiconductor Single Layer Capacitor BENEFITS • • • • Very Stable Capacitance GHz Operation Customizable Small Size GENERAL INFORMATION For applications in RF, microwave, and GHz ranges, AVX now offers MOS Capacitors. MOS Capacitors are Single
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50MHz-25GHz
MIL-STD-883 Method 2019
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Mil-Std-883 Wire Bond shear Method 2011
Abstract: MIL-STD-883 method 2019
Text: MOS Cap Metal Oxide Semiconductor Single Layer Capacitor BENEFITS • • • • Very Stable Capacitance GHz Operation Customizable Small Size GENERAL INFORMATION For applications in RF, microwave, and GHz ranges, AVX now offers MOS Capacitors. MOS Capacitors are Single
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MIL-STD-883,
MIL-STD-202,
50MHz-25GHz
Mil-Std-883 Wire Bond shear Method 2011
MIL-STD-883 method 2019
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MSM6051
Abstract: circuit diagram of electronic calculator using microcontroller 0.1 MF CAPACITOR crystal 32.768 crystal 32768
Text: E2E0009-38-94 ¡ Semiconductor MSM6051 ¡ Semiconductor This version: Sep. 1998 MSM6051 Previous version: Mar. 1996 Built-in Melody Circuit and LCD Driver 4-Bit Microcontroller GENERAL DESCRIPTION The MSM6051 is a low-power microcontroller manufactured in complementary metal-oxide
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E2E0009-38-94
MSM6051
MSM6051
circuit diagram of electronic calculator using microcontroller
0.1 MF CAPACITOR
crystal 32.768
crystal 32768
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MSM5052
Abstract: QFP80-P-1420-0 thermistor 7 rom
Text: E2E0008-38-94 ¡ Semiconductor MSM5052 ¡ Semiconductor This version: Sep. 1998 MSM5052 Previous version: Mar. 1996 Built-in Temperature Circuit and LCD Driver 4-Bit Microcontroller GENERAL DESCRIPTION The MSM5052 is a low-power microcontroller manufactured in complementary metal-oxide
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E2E0008-38-94
MSM5052
MSM5052
QFP80-P-1420-0
80-BK
thermistor 7 rom
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Leach Relay Reliability
Abstract: Leach Suppressor Metal Oxide Varistor MOV SUPPRESSOR varistor 222 Metal-Oxide Varistor Harris Transient Voltage Suppression Manual AN9211 harris varistors Syfer Capacitors zinc-oxide nonlinear resistors
Text: Harris Semiconductor No. AN9211 Harris MOVs April 1993 Soldering Recommendations for Surface Mount Metal Oxide Varistors and Multilayer Transient Voltage Suppressors Authors: Marty Corbett and Neil McLoughlin Introduction In recent years, electronic systems have migrated towards
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AN9211
DB450)
Leach Relay Reliability
Leach Suppressor Metal Oxide Varistor
MOV SUPPRESSOR
varistor 222
Metal-Oxide Varistor
Harris Transient Voltage Suppression Manual
AN9211
harris varistors
Syfer Capacitors
zinc-oxide nonlinear resistors
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Microwave Generator
Abstract: SMCAP5100
Text: SURFACE MOUNT MIS CAPACITORS IN SOD 323 PACKAGE FEATURES • Dual insulating layer Nitride-Oxide for maximum reliability • Low Loss, typically 0.04 dB in a 50 Ohm system • Very low temperature coefficient TYPES • MC2 (50 Volt series) DESCRIPTION MIS (Metal-Insulating Layer-Silicon) Capacitors are
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94O86
Microwave Generator
SMCAP5100
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT MIS CAPACITORS IN SOD 323 PACKAGE FEATURES • Dual insulating layer Nitride-Oxide for maximum reliability • Low Loss, typically 0.04 dB in a 50 Ohm system • Very low temperature coefficient TYPES • MC2 (50 Volt series) DESCRIPTION MIS (Metal-Insulating Layer-Silicon) Capacitors are
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AN9211
Abstract: No abstract text available
Text: Harris Semiconductor No. AN9211.1 Harris Suppression Products January 1998 Soldering Recommendations for Surface Mount Metal Oxide Varistors and Multilayer Transient Voltage Suppressors Authors: Marty Corbett and Neil McLoughlin Introduction In recent years, electronic systems have migrated towards
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AN9211
1-800-4-HARRIS
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Socket Modules
Abstract: Section 3 MOV SUPPRESSOR RC SUPPRESSOR varistor relay wiring diagram A2 diode 70-ASMM-120 Relay coil ind cont eq METAL OXIDE VARISTOR
Text: SECTION 3 Advantages of the 70-SM Module System Magnecraft plug in modules are available in many variations allowing coverage for most applications on the market. The Metal Oxide Varistor MOV circuit protects by shunting potentially damaging electrical spikes away from the relay coil. The
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70-SM
Socket Modules
Section 3
MOV SUPPRESSOR
RC SUPPRESSOR
varistor relay wiring diagram
A2 diode
70-ASMM-120
Relay coil
ind cont eq
METAL OXIDE VARISTOR
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resistron
Abstract: Technology First
Text: CERMET CERMET RESISTRONICS PVT. LTD - \\\v THICK FILM METAL OXIDE RESISTORS THICK FILM METAL OXIDE RESISTORS CUL Series Developed with Indigenous Technology First Tim e In the C ountry Most Reliable Glass based Thick Metal Oxide Film Most Preferred for Capacitor Discharge application
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CUL75I
resistron
Technology First
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GE-MOV
Abstract: gemov ge varistor thyrector "silicon carbide" varistor GE-MOV Z SERIES ge mov V120MA2B V47MA2B V47MA2A
Text: SERIES Metal Oxide Varistors 33-430 VOLTS D.C. NOMINAL VARISTOR VOLTAGE . RATINGS OF 23-365 VOLTS D.C., 18-264 VOLTS RMS.1-.7 JOULEs L MA Description: GE-MOV zinc oxide varistors are voltage dependent, symmetrical resistors which perform in a manner similar to
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MSM5842
Abstract: MSM58422 58422 4 pin flat lem la 20 pb 1536X8 pflt5
Text: OKI semiconductor MSM58422_ CMOS 4-BIT SINGLE CHIP MICROCONTROLLER WITH FLT DRIVER GENERAL DESCRIPTION OKI’s M SM 58422 is a low-power, high-performance 4-bit single-chip microcontroller imple mented in complementary metal oxide sem iconductor technology.
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MSM5842
MSM58422
58422
4 pin flat
lem la 20 pb
1536X8
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Untitled
Abstract: No abstract text available
Text: O K I Bmloonduotor MSM6502/6512 CMOS 4 BIT SINGLE CHIP MICROCONTROLLER WITH LCD DRIVER GENERAL DESCRIPTION The OKI MSM6502/6512 is a low-power, high-performance 4 bit single-chip microcontroller im plemented in complementary metal oxide semiconductor technology.
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MSM6502/651
OLMS-40
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51132L
Abstract: ic. m5201 M65840FP m5201 KEY CONTROL 65840FP MITSUBISHI Digital Echo
Text: MITSUBISHI SOUND PROCESSOR ICS | M65840FP/SP DIGITAL KEY CONTROLLER DESCRIPTION The M 65840 is Complementary Metal Oxide Semiconductor Integrated Circuit is used to control the key of music in karaoke* players. This single chip has all functions necessary for key control.
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M65840FP/SP
32k-bit
84dBm
M65840FP/SP
1500p
16MHz
51132L
ic. m5201
M65840FP
m5201
KEY CONTROL
65840FP
MITSUBISHI Digital Echo
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM80 C31 F/MSM80 C5 1F CMOS 8-Bit Microcontroller GENERAL DESCRIPTION The OKI MSM80C31F/MSM80C51F microcontroller is a low-power, 8 -bit device implemented in OKI's silicon-gate complementary metal-oxide semiconductor process technology. The device
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MSM80C31F
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MSM80C51F
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