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    METAL RECTIFIER DIODE 40A Search Results

    METAL RECTIFIER DIODE 40A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    METAL RECTIFIER DIODE 40A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    common anode schottky to220

    Abstract: rectifier diode common anode Common Anode dual Schottky Rectifier SB16-40AM
    Text: SB16-45M SB16-45AM SB16-45RM SEME LAB DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI–REL APPLICATIONS MECHANICAL DATA Dimensions in mm 4.6 1 0.6 0.8 3.6 Dia. 1 0 .6 1 3 .5 16.5 SB16-40M SB16-40AM SB16-40RM FEATURES 1 23 • HERMETIC TO220 METAL PACKAGE


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    SB16-45M SB16-45AM SB16-45RM SB16-40M SB16-40AM SB16-40RM SB16-40M SB16-40AM common anode schottky to220 rectifier diode common anode Common Anode dual Schottky Rectifier PDF

    Untitled

    Abstract: No abstract text available
    Text: IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C G G IC = 40A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 24A C n-channel Applications G Gate E G IRGP4262D-EPbF


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    IRGP4262DPbF IRGP4262D-EPbF O-247AD O-247AC PDF

    DF378F

    Abstract: DF103B NR231A rectifier three phase 40a alternator exploded view power circuit of three phase control rectifier HRP2540 washer lock Transient Voltage Suppression Devices, Harris
    Text: HRP2540 S E M I C O N D U C T O R Power Rectifier/Power Surge Suppressor April 1995 Features Package • Low Forward Voltage Drop 1.1V Max at 100A JEDEC TO-220AB A • High Reverse Energy Capability K A • Controlled Maximum Avalanche Voltage (40V Max at 40A)


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    HRP2540 O-220AB TA9673) 25oC/W NR231A DF103B DF378F 09kgf DF378F DF103B NR231A rectifier three phase 40a alternator exploded view power circuit of three phase control rectifier HRP2540 washer lock Transient Voltage Suppression Devices, Harris PDF

    LE17

    Abstract: No abstract text available
    Text: SCHOTTKY RECTIFIER DIODE SML4045CP1 • Hermetic TO3 Package • VRRM = 45V, IF =40A • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VRRM VRWM VR IO IFSM TJ TSTG Repetitive Peak Reverse Voltage


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    SML4045CP1 O-204AA) LE17 PDF

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    Abstract: No abstract text available
    Text: SCHOTTKY RECTIFIER DIODE SML4045CP1 • Hermetic TO3 Package • VRRM = 45V, IF =40A • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VRRM VRWM VR IO IFSM TJ TSTG Repetitive Peak Reverse Voltage


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    SML4045CP1 81C/W) O-204AA) PDF

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G G C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 25A E n-channel Applications G IRG7PH44K10DPbF


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    IRG7PH44K10DPbF IRG7PH44K10D-EPbF IRG7PH44K10DPbFÂ 247ACÂ IRG7PH44K10Dâ 247ADÂ O-247AC O-247AD PDF

    Untitled

    Abstract: No abstract text available
    Text: 40A Integrated PowIRstage FEATURES IR3552 DESCRIPTION • Peak efficiency up to 94.5% at 12VIN to 1.8VOUT, 93.3% at 1.2VOUT The IR3552 integrated PowIRstage contains a low quiescent current synchronous buck gate driver IC which is co-packed with control and synchronous


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    IR3552 12VIN IR3552 PDF

    Untitled

    Abstract: No abstract text available
    Text: SB40150CT SB40200CT 40A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip       Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability


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    SB40150CT SB40200CT O-220 O-220, MIL-STD-202, PDF

    3 watt 70v zener diode

    Abstract: inkjet print head interface K784P
    Text: Inkjet Printer Table of Contents ACCESS SENSORS, Door Sensor. 3 CONTROL BOARD, DSP


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    00V-600V; DO-220AA V-540V; V-440V DO-204AL DO-41) DO-204AC DO-15) 3 watt 70v zener diode inkjet print head interface K784P PDF

    Untitled

    Abstract: No abstract text available
    Text: SB4020CT SB40100CT 40A DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip       Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability


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    SB4020CT SB40100CT O-220 O-220, MIL-STD-202, PDF

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


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    Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415 PDF

    feature of ic UM 66

    Abstract: wo02 Trench MOS Schottky Rectifier um 66 ic "A low barrier Schottky metal was used" 40L15CT 65PQ015 80CPT015 wo-02
    Text: Increased Efficiency and Improved Reliability in “ORing” functions using Trench Schottky Technology Davide Chiola, Stephen Oliver, Marco Soldano International Rectifier, El Segundo, USA. As presented at PCIM Europe, 2002 Abstract – Presented in this paper are the characteristics of the first Trench MOS Schottky Diode released to


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    WO02/19433 feature of ic UM 66 wo02 Trench MOS Schottky Rectifier um 66 ic "A low barrier Schottky metal was used" 40L15CT 65PQ015 80CPT015 wo-02 PDF

    piezo injector

    Abstract: Automotive ECU IC automotive ecu circuit engine diesel injector MOSFET driver WSLT2512
    Text: Diesel ECU and Fuel Injector Drivers Table of Contents CAN-BUS, ESD Protection. 3 CAN-BUS, ISO9141 Bus Transceiver. 4


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    ISO9141 O-277A 0V-50VDC; SM5A27HE3 DO-218AB SM8A27HE3 piezo injector Automotive ECU IC automotive ecu circuit engine diesel injector MOSFET driver WSLT2512 PDF

    mosfet SMD 6 PIN IC FOR PWM

    Abstract: 210nH IR3553MTRPBF ir3550 IR3553
    Text: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to 3.3V


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    IR3550 IR3551 IR3553 IR3553 3553M mosfet SMD 6 PIN IC FOR PWM 210nH IR3553MTRPBF PDF

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    Abstract: No abstract text available
    Text: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to (VCC - 2.5V)


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    IR3550 IR3551 IR3553 IR3553 3553M PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-40EPS16PbF, VS-40APS16PbF, VS-40EPS16-M3, VS-40APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A TO-247AC modified FEATURES TO-247AC • Very low forward voltage drop • 150 °C max. operating junction temperature


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    VS-40EPS16PbF, VS-40APS16PbF, VS-40EPS16-M3, VS-40APS16-M3 O-247AC O-247AC -JESD47 VS-40EPS16PbF VS-40EPS16-M3 2002/95/EC. PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-40EPS16PbF, VS-40APS16PbF, VS-40EPS16-M3, VS-40APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A TO-247AC modified FEATURES TO-247AC • Very low forward voltage drop • 150 °C max. operating junction temperature


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    VS-40EPS16PbF, VS-40APS16PbF, VS-40EPS16-M3, VS-40APS16-M3 O-247AC O-247AC -JESD47 VS-40EPS16PbF VS-40EPS16-M3 2002/95/EC. PDF

    pn junction diode structure

    Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
    Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode 1 Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss


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    igbt inverter welder schematic

    Abstract: SCHEMATIC 1000w smps 48V SMPS 1000w 24V 10A SMPS smps 500w half bridge smps 1000W full bridge mosfet smps 48V 100w SMPS inverter welder schematic half bridge converter 2kw
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Discrete Solutions for Power Supplies Across the board. Around the world. Discrete Solutions for Power Supplies Fairchild Semiconductor is one of the world’s leading providers of Discrete Power Products, including Metal Oxide Semiconductor Field


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    PQFN 8 leads

    Abstract: ir3551 smd diode schottky code marking SR MOSFET current sense amplifier
    Text: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V The IR3553 integrated PowIRstage® is a synchronous buck gate driver co-packed with a control MOSFET and a synchronous MOSFET with integrated Schottky diode. It is


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    IR3550 IR3551 IR3553 3553M PQFN 8 leads ir3551 smd diode schottky code marking SR MOSFET current sense amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: OM6Û17SA OM6019SA OM6Q18SA OM6020SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • • • Isolated Hermetic Metal Package Fast Switching Low RDS 0n Available Screened To MIL-S-19500, TX, TXV And S Levels


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    OM6019SA OM6Q18SA OM6020SA O-254AA MIL-S-19500, bV0HQ73 PDF

    Untitled

    Abstract: No abstract text available
    Text: _ L!_ _ _ _ _ _ _ _— N AMER PHILIPS/DISCRETE bbSBTBl 0011243 4 • OLE D BYV18 SERIES T-03-17 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward


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    BYV18 T-03-17 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D bbS3T31^ DQ113T1 E • | BYV43_SERIES T-03-19 ' SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and zero


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    bbS3T31^ DQ113T1 BYV43_ T-03-19 BYV43-40A, DD114D5 BYV43SERIES M1246 BYV43 PDF

    Untitled

    Abstract: No abstract text available
    Text: HRP2540 S em iconductor April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device


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    HRP2540 TA9673) O-22QAB 1-25OC/W NR231A DF103B DF378F 09kgf PDF