LT3973-3.3
Abstract: CDR01-CDR06 C1206 KEMET packaging PEF55801VV1.3 CDR05BX823BKW CDR31-CDR35 MIL-PRF-55681 kemet 31G-4 CDR02 LT1432-3.3
Text: CERAMIC CHIP/MIL-PRF-55681 KEMET CAPACITOR OUTLINE DRAWINGS CHIP DIMENSIONS “SOLDERGUARD I” * SOLDER L W “SOLDERGUARD II” T TINNED BW NICKEL ELECTRODES SILVER METALLIZATION NICKEL ELECTRODES Military Designation - “S” or “U” KEMET Designation - “H”
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CHIP/MIL-PRF-55681
CDR01
CDR02
CDR03
CDR04
C0805
C1805
C1808
C1812
CDR05
LT3973-3.3
CDR01-CDR06
C1206 KEMET packaging
PEF55801VV1.3
CDR05BX823BKW
CDR31-CDR35
MIL-PRF-55681 kemet
31G-4
CDR02
LT1432-3.3
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55CU
Abstract: No abstract text available
Text: 0105 - 12 12 Watts, 28 Volts, Class AB Defcom 100 - 500 MHz GENERAL DESCRIPTION CASE OUTLINE The 0105-12 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 100-500 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused
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MIL-PRF-55681
Abstract: C180 cdr01 capacitors kemet capacitor c1206 CDR02 CDR03 CDR31 CDR32 CDR33 CDR01-CDR06
Text: CERAMIC CHIP/MIL-PRF-55681 CAPACITOR OUTLINE DRAWINGS CHIP DIMENSIONS “SOLDERGUARD I” * SOLDER L W “SOLDERGUARD II” T TINNED BW NICKEL ELECTRODES SILVER METALLIZATION NICKEL ELECTRODES Military Designation - “S” or “U” KEMET Designation - “H”
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CHIP/MIL-PRF-55681
CDR01
CDR02
CDR03
CDR04
C0805
C1805
C1808
C1812
CDR05
MIL-PRF-55681
C180
cdr01 capacitors
kemet capacitor c1206
CDR02
CDR03
CDR31
CDR32
CDR33
CDR01-CDR06
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rt6010
Abstract: 2200uf, 63v electrolytic capacitor j453 transistor x 313 63v 2200uF 200B MDS140L 25-mils J345 1030 PULSED 32uS MODE-S
Text: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The
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MDS140L
MDS140L
rt6010
2200uf, 63v electrolytic capacitor
j453
transistor x 313
63v 2200uF
200B
25-mils
J345
1030 PULSED 32uS MODE-S
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MS2205
Abstract: No abstract text available
Text: MS2205 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • 1025-1150 MHz GOLD METALLIZATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 4 W MINIMUM GP= 10 dB COMMON BASE CONFIGURATION .280 2LFL M220 Epoxy Sealed DESCRIPTION:
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MS2205
MS2205
400mW
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88-108 mhz w power
Abstract: 88-108 an power 88-108 mhz 55ht fm emitter 88-108 mhz Power w 88-108mhz fm transistor
Text: FM 150 150 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION The FM 150 is a high power COMMON EMITTER bipolar transistor. It is designed for FM systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.
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100Ma
88-108 mhz w power
88-108
an power 88-108 mhz
55ht
fm emitter
88-108 mhz Power w
88-108mhz
fm transistor
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TAN15
Abstract: No abstract text available
Text: TAN15 15 Watts, 40 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN15 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor
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TAN15
TAN15
25oC2
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SD2941-10
Abstract: EE-19 transformer SD2931-10 VK200
Text: SD2941-10 RF power transistors HF/VHF/UHF N-channel MOSFETs General features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175W min. with 15dB gain @ 175MHz ■ Low RDS on ■ Thermally enhanced packaging for lower
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SD2941-10
175MHz
SD2941-10
SD2931-10.
EE-19 transformer
SD2931-10
VK200
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1035 transistor
Abstract: M.P transistor
Text: 1035 MP 35 Watt, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1035 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes
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25oC2
1035 transistor
M.P transistor
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G200
Abstract: f 0952
Text: PTF 102028 18 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 102028 is an 18–watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
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P4525-ND
P5182-ND
1-877-GOLDMOS
1522-PTF
G200
f 0952
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55ay
Abstract: DME150
Text: DME 150 150 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The DME 150 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven
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25oC2
DME150
55ay
DME150
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Di 762 transistor
Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33
Text: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System
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PH1920-33
lN4245
73050258-S
Di 762 transistor
transistor a015
transistor npn a 1930
wacom connector
wacom
33w NPN
13MM
PH1920-33
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TGF1350
Abstract: No abstract text available
Text: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation
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TGF1350
TGF1350
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1N3891 equivalent
Abstract: 12v diode 10A
Text: -Jolìtrm i Devices. Inc. [^ @QJJ©T ©ATTM, ' MEDIUM TO HIGH VOLTAGE CHIP N UM BER PINI EPITAXIAL PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 50,000 A Aluminum Cathode: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:
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457mm)
1N3889,
1N3890,
1N3891,
1N3892
C-122
1N3891 equivalent
12v diode 10A
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Untitled
Abstract: No abstract text available
Text: -Ætttrun Ä \Y Ä [L VERY HIGH VOLTAGE, FAST SWITCHING Devices. Inc. NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER (FORMERLY 42 CONTACT METALLIZATION B ase a n d emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilver" also available)
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83mra)
203mm)
JAN2N3902,
JAN2N5157,
SDT401,
SDT430,
2N5466,
2N5468
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2N4307
Abstract: No abstract text available
Text: C o n t ra n Devices. Inc LOW TO MEDIUM VOLTAGE, FAST SWITCHING CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:
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203mm)
2N4307
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Untitled
Abstract: No abstract text available
Text: -Æ tttran MEDIUM VOLTAGE, FAST RECOVERY Devices. Inc. CHIP NUMBER PIM EPITAXIAL FAST RECOVERY PLANAR POWER DIODE dfì CONTACT METALLIZATION Anode: > 50,000 A Aluminum Cathode: Gold Polished silicon or "Chrom e Nickel Silver" also available Mso available on:
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305mm)
C-125
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NPN Transistor 50A 400V
Abstract: 1200PF
Text: C o n tr a n Devices. Inc. MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver” also available Also available on:
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470mm
938mm
938mm)
508mm)
700mm)
524mm)
203mm)
10MHz
NPN Transistor 50A 400V
1200PF
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SDT13301-SDT13305
Abstract: No abstract text available
Text: C ^ isnuxmr ©ättail o n tra n Devices. Inc VERY HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER _ IMPIM TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION B a se and emitter: > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrom e Nickel Silver” also availab le
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305mm)
SDT13301-SDT13305
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1N3902
Abstract: No abstract text available
Text: ^ ©mKSTT ©ÄTTÄtL© =Æutnm MEDIUM TO HIGH VOLTAGE Devices. Inc. CHIP NUMBER PIM EPITAXIAL PLANAR POW ER DIODE CONTACT METALLIZATION Anode: > 50,000 A Aluminum Cathode: Gold Polished silicon or "Chrom e Nickel Silver" also available Also availab le on:
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457mm)
1N3899.
1N3900,
1N3901,
1N3902
C-123
1N3902
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Transistors high frequency Bipolar NPN
Abstract: No abstract text available
Text: Temic S e m i <; <> n ! u c t o r s Features Benefits • Full range of matrices up to 1000 com ponents The Series A arrays are excellently suitable for the • Single-level metallization, second level possible production o f c u s to m e r specific integrated circuits
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144pF
Transistors high frequency Bipolar NPN
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Untitled
Abstract: No abstract text available
Text: Contran Ä ¥Ä 1L© M E D IU M VOLTAGE, FAST SW ITCHING, HIGH GAIN Devices. Inc MONOLITHIC N P N EPITAXIAL PLANAR POWER DARLINGTON TR A N S IS TO R * (FORMERLY 0 3 ] CHIP NUMBER c -n CONTACT METALLIZATION B a se and emitter: > 30,000 A Aluminum Collector: Gold
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203mm)
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2N6261
Abstract: No abstract text available
Text: -Jiolitron [ ^ » © T ©ATTM.©' Devices. Inc MEDIUM VOLTAGE CH IP N UM BER NPN SINGLE DIFFUSED MESA TRANSISTOR FORMERLY 06 CONTACT METALLIZATION B ase, Emitter a n d Collector Solder C o ated 95/5% le ad /tin . ASSEMBLY RECOMMENDATIONS It is ad v isa b le that:
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2N3054,
2N3441,
2N6260,
2N6261.
2N6263
C-110
2N6261
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Untitled
Abstract: No abstract text available
Text: K J iä \ß t U l i Semiconductors Intermittent- and Wipe/Wash Control for Wiper Systems Description With the U264xB, TEMIC Semiconductors developed a generate ”x” versions using different metallization family of intermittent- and wipe/wash control circuits for masks. Thus, it is easy to verify a broad range of time sewindshield or backlite wiper systems with identical basic quences which can be set independently of each other,
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U264xB,
D-74025
02-Dec-97
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