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    METELICS DETECTOR DIODE Search Results

    METELICS DETECTOR DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    METELICS DETECTOR DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GaAs tunnel diode

    Abstract: Germanium Schottky diode tunnel diode GaAs SMGS11 germanium diode germanium diodes Microwave detector diodes SMS202
    Text: FOR IMMEDIATE RELEASE: January 11, 2010 CONTACT: Jim Godbout Aeroflex / Metelics VP Sales and Marketing 408-328-3321 James.godbout@aeroflex.com Teresa Farris Aeroflex / Metelics MARCOM Manager 719-594-8035 Teresa.farris@aeroflex.com PLASTIC SMT SCHOTTKY MIXER/DETECTOR DIODES


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MSS39,000 Series P-Type Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS39,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biased-detector applications up to 40


    Original     		PDF MSS39

    018pF

    Abstract: B10B Microwave detector diodes MSS39 mss39,152-h20 Aeroflex mss39 CA P86
    Text: MSS39,000 Series P-Type Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS39,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biased-detector applications up to 40


    Original     		PDF MSS39 018pF B10B Microwave detector diodes mss39,152-h20 Aeroflex mss39 CA P86

    A17025

    Abstract: MSS39 K 2642
    Text: MSS39,000 Series P-Type Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS39,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biased-detector applications up to 40


    Original     		PDF MSS39 A17025 A17025 K 2642

    Untitled

    Abstract: No abstract text available
    Text: MSS20,000 Series Zero Bias Schottky Diodes Description Features The Aeroflex / Metelics MSS20,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave zero-bias detector applications up to 40 GHz.


    Original     		PDF MSS20

    Metelics MSS20-141

    Abstract: MSS20 C15 9 pin mss20.143 142-B10D
    Text: MSS20,000 Series Zero Bias Schottky Diodes Description Features The Aeroflex / Metelics MSS20,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave zero-bias detector applications up to 40 GHz.


    Original     		PDF MSS20 046-C15 047-C15 A17027 Metelics MSS20-141 C15 9 pin mss20.143 142-B10D

    MSS20.143-B10D

    Abstract: mss20 b10d 050c1 MSS20, 143-B10D MSS-20 mss20,140 mss20,146 mss20.140 mss20.050
    Text: MSS20,000 Series Zero Bias Schottky Diodes Description Features The Aeroflex / Metelics MSS20,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave zero-bias detector applications up to 40 GHz.


    Original     		PDF MSS20 MSS20.143-B10D b10d 050c1 MSS20, 143-B10D MSS-20 mss20,140 mss20,146 mss20.140 mss20.050

    SMS201

    Abstract: AEROFLEX SMS-201 A 0503 METELICS DETECTOR DIODE
    Text: SMS201 Silicon Schottky Diodes 1 1 PIN FUNCTION 1 ANODE 2 CATHODE 2 2 0503 Molded Plastic DFN Package Description Features The SMS201 is a silicon Schottky diode in a molded plastic DFN package. It is designed for a broadband zero bias detector. It has a high cutoff frequency and


    Original     		PDF SMS201 SMS201 A17104 AEROFLEX SMS-201 A 0503 METELICS DETECTOR DIODE

    Untitled

    Abstract: No abstract text available
    Text: SMS202 Silicon Schottky Diodes 1 1 PIN FUNCTION 1 ANODE 2 CATHODE 2 2 0503 Molded Plastic DFN Package Description Features The SMS202 is a silicon Schottky diode in a molded plastic DFN package. It is designed for a broadband zero bias detector. It can be used up to 18 GHz and


    Original     		PDF SMS202 SMS202 A17105

    MZB600

    Abstract: No abstract text available
    Text: Zero Bias Detector Diode MZB600 Features • Very Low Forward Voltage: 300 mV maximum @ 1 mA • Low Tangential Signal Sensitivity: -42 dBm typical • Low Junction Capacitance: CJ = 0.2 pF typical • High breakdown voltage: 3 V minimum • Available in Beam Lead, Multijunction Chip or Packaged


    Original     		PDF MZB600 CS19-6 MZB600

    MZB600-19-6-W

    Abstract: MZB600 MZB600-19-6-R
    Text: Zero Bias Detector Diode MZB600 Features • Very Low Forward Voltage: 300 mV maximum @ 1 mA • Low Tangential Signal Sensitivity: -42 dBm typical • Low Junction Capacitance: CJ = 0.2 pF typical • High breakdown voltage: 3 V minimum • Available in Beam Lead, Multijunction Chip or Packaged


    Original     		PDF MZB600 CS19-6 MZB600-19-6-W MZB600-19-6-R

    MZB600

    Abstract: No abstract text available
    Text: Zero Bias Detector Diode MZB600 Features • Very Low Forward Voltage: 300 mV maximum @ 1 mA • Low Tangential Signal Sensitivity: -42 dBm typical • Low Junction Capacitance: CJ = 0.2 pF typical • High breakdown voltage: 3 V minimum • Available in Beam Lead, Multijunction Chip or Packaged


    Original     		PDF MZB600 CS19-6

    MSPD2018

    Abstract: MSPD1012-E50 MSPD2018-E50 MSPD-1012-E50 MSPD1012E50 sampling phase detector SPD MSPD1000 Sampling Phase Detectors impulse generator microwave Sampling Phase Detector
    Text: Sampling Phase Detector Modules MSPD1000, MSPD1002, MSPD1012 & MSPD2018 Features E50 & E50SM Description The Sampling Phase Detector (SPD) module is a hybrid circuit providing a fast Step Recovery Diode, coupling capacitors and a low barrier Schottky pair.


    Original     		PDF MSPD1000, MSPD1002, MSPD1012 MSPD2018 E50SM) A17135 MSPD2018 MSPD1012-E50 MSPD2018-E50 MSPD-1012-E50 MSPD1012E50 sampling phase detector SPD MSPD1000 Sampling Phase Detectors impulse generator microwave Sampling Phase Detector

    J-STD-20C

    Abstract: METELICS DETECTOR DIODE J-STD-20-C A 0503 SMS-202
    Text: SMS202 Silicon Schottky Diodes 1 1 PIN FUNCTION 1 ANODE 2 CATHODE 2 2 0503 Molded Plastic DFN Package Description Features The SMS202 is a silicon Schottky diode in a molded plastic DFN package. It is designed for a broadband zero bias detector. It can be used up to 18 GHz and


    Original     		PDF SMS202 SMS202 A17105 J-STD-20C METELICS DETECTOR DIODE J-STD-20-C A 0503 SMS-202

    148-E20

    Abstract: MSS39 148-H20 bd513
    Text: B5E D METELICS CORP bD513S2 OOOOlbM MSS-39,000 SERIES P-TYPE SCHOTTKY DETECTOR DIODES 1 T * 0 -7 - 0 7 metelics CORPORATION FEATURES • • • • • • Low Rs Extremely Low l/f Noise LowTSS Strong Beam Leads Tight Batch Matching Available Hi-Rel Available MIL-S-19500, MIL-STD-750


    OCR Scan     		PDF bD513S2 MSS-39 MIL-S-19500, MIL-STD-750) 148-E20 MSS39 148-H20 bd513

    Untitled

    Abstract: No abstract text available
    Text: METELICS 25E CORP bOS135S D 0000172 SAMPLING PHASE DETECTOR Ô 0 7 -0 1 * metelics CORPORATION FEATURES • • • • Phase Locking to 22 GHz Broadband Capability Fully Integrated Module Phase Locks DRO’s and VCO’s MAXIMUM RATINGS Storage Temperature. -6 5to+ 150°C


    OCR Scan     		PDF bOS135S MSPD-1000-E50 MSPD-1002-E50 MSPD-1012-E50 MSPD-1020-E50

    metelics FSCM 59365

    Abstract: MSS39 MSS-39045-C15 FSCM 59365
    Text: M ETELICS CORP HE T-Û7-07 D§ tiQSlBSa OODQDTS 5 | M SS-39,000 Series Detector P-Type Schottky D iodes metelics CORPORATION Features Applications • Low Rs • Biased detector • Extremely low l/f noise • Unbiased power monitor > — 15 dBm • Lower TSS


    OCR Scan     		PDF MIL-S-19500, MIL-STD-750) SS-39 MSS-39 041-C 041-P55 041-P86 metelics FSCM 59365 MSS39 MSS-39045-C15 FSCM 59365

    Untitled

    Abstract: No abstract text available
    Text: IDE metelics SURFACE MOUNT SOT23 AND SOD323 SCHOTTKY MIXERS AND DETECTOR DIODES CORPORATION FEATURES Surface Mount Package Tape and Reel Available Reliability Gold Metallized Chip Silicon Nitride/Oxide Passivation Low Series Resistance Low Capacitance Wide Dynamic Range


    OCR Scan     		PDF OD323 OD323 b051352

    MSPD1020E50

    Abstract: sampling phase detector SPD MSPD-1020-E50 MSPD1012-E50 MSPD1020-E50 sampling mixer MSPD-1012-E50 mspd1012 ,"diode srd" MSPD1012E50
    Text: THE SAMPLING PHASE DETECTOR metelics C O R P O R ATIO N The Sampling Phase Detector SPD is composed of a comb generator, a coupling network and a single balanced mixer. It is designed to be used in phase locking circuits for microwave oscillators. The following description of the operation of the SPD refers


    OCR Scan     		PDF MSPD-1020 100MHz 19dBm 23dBm 21dBm MSPD1020E50 sampling phase detector SPD MSPD-1020-E50 MSPD1012-E50 MSPD1020-E50 sampling mixer MSPD-1012-E50 mspd1012 ,"diode srd" MSPD1012E50

    back Tunnel diode

    Abstract: "back diode" Germanium power DIODE tunnel MBD back diode
    Text: METELICS 11E CORP D I b OS 1 35 2 0 0Ü Q 13 0 3 IRLANAR BACK TUNNEL DIODES i lo w freq u en cy Detector Series (To 2 GHz) FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth


    OCR Scan     		PDF MIL-STD-19500 -65to+ 17dBmCW MBD-1050-C19 MBD-1050-A20 MBD-1050-T80 MBD-1050-T54 MBD-1050-H20 MBD-1050-E26 MBD-205s back Tunnel diode "back diode" Germanium power DIODE tunnel MBD back diode

    ZO diode

    Abstract: SOT230 SMSD3004
    Text: TflEj metelics SURFACE M O U N T SOT23 A N D S O D 323 SCHOTTKY MIXERS A N D DETECTOR DIODES * CORPORATION FEATURES Surface Mount Package Tape a n d Reel A vailable Reliability G old M etallized Chip Silicon N itride/O xide Passivation Low Series Resistance


    OCR Scan     		PDF OD323 ZO diode SOT230 SMSD3004

    SMSD3012

    Abstract: No abstract text available
    Text: SURFACE M O U N T SOT23 A N D S O D 323 SCHOTTKY MIXERS A N D DETECTOR DIODES metelics CORPORATION MAXIMUM RATINGS PACKAGE CHARACTERISTICS Operating/Storage Temperature R a n g e -65°C to +150°C Max Power Dissipation per P a c k a g e .250mW


    OCR Scan     		PDF 250mW SMST3012 SMST4012 SMST6012 SMST3004 SMST4004 SMST6004 SMSD3012 SMSD4012 SMSD6012

    MPND-4005

    Abstract: MPND4005 MCE Metelics MBP-1030 metelics anti-parallel
    Text: MTLXS00066 metelics SCHOTTKY FOR MIXER, DOUBLER OR BIASED DETECTOR • ojsmoi4i ' ojeioooq PART NUMBER MSS-30, MSS-40, MSS-50, MSS-60, 142 141 146 144 TYPE VF @ 1 mA mV MAX. RD @ 5 mA SINGLE SINGLE SINGLE SINGLE 230 TO 350 335 TO 505 415 TO 625 580 TO 675


    OCR Scan     		PDF MTLXS00066 MSS-30, MSS-40, MSS-50, MSS-60, PCR46 MPND-4005 MPND4005 MCE Metelics MBP-1030 metelics anti-parallel

    MBD3057-C18

    Abstract: MBD2057-C18 MBD-1057-C18 mbd1057-c18 MBD-2057-C18 back Tunnel diode mbd 1057 MBD-3057-C18 MBD-3057-H20 "back diode"
    Text: ISPMAR BACK TUNNEL DIODES Iflgl i Frequency Detector Series (To 18 GHz) metelics ID CORPORATION FEATURES • • • • • R u g g e d G e rm a n iu m P lanar Construction Excellent T e m p e ra tu re Stability N o D C Bias R eq uired W id e V id e o B andw idth


    OCR Scan     		PDF