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    Toshiba America Electronic Components MG100Q1JS40

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    Bristol Electronics MG100Q1JS40 5 1
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    Quest Components MG100Q1JS40 4
    • 1 $84.5
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    MG100Q Datasheets (47)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MG100Q1JS40 Toshiba TRANS IGBT MODULE N-CH 1200V 100A 5(2-108A4A) Original PDF
    MG100Q1JS40 Toshiba Silicon N-channel IGBT GTR module for high power switching,chopper applications Original PDF
    MG100Q1JS40 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG100Q1ZS40 Toshiba TRANS IGBT MODULE N-CH 1200V 100A 5(2-108A3A) Original PDF
    MG100Q1ZS40 Toshiba Silicon N-channel IGBT GTR module for high power switching,chopper applications Original PDF
    MG100Q1ZS40 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG100Q1ZS50 Toshiba TRANS IGBT MODULE N-CH 1200V 150A 5(2-95A6A) Original PDF
    MG100Q1ZS50 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG100Q1ZS50 Toshiba GTR MODULE SILICON N CHANNEL IGBT Scan PDF
    MG100Q2Y51 Toshiba HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Scan PDF
    MG100Q2YK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100Q2YK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100Q2YK1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG100Q2YK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG100Q2YK1 Westcode Semiconductors NPN transistor for high power switching and notor control applications, 1200V, 100A Scan PDF
    MG100Q2YL1 Unknown Scan PDF
    MG100Q2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100Q2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100Q2YS11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100Q2YS11 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    MG100Q Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG100Q1ZS50

    Abstract: No abstract text available
    Text: MG100Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode


    Original     		PDF MG100Q1ZS50 2-95A6A MG100Q1ZS50

    dc to dc chopper using igbt

    Abstract: TOSHIBA IGBT DATA BOOK MG100Q1ZS40
    Text: MG100Q1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode


    Original     		PDF MG100Q1ZS40 2-108A3A dc to dc chopper using igbt TOSHIBA IGBT DATA BOOK MG100Q1ZS40

    Untitled

    Abstract: No abstract text available
    Text: MG100Q2YS42 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS42 High Power Switching Applications Motor Control Applications High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode


    Original     		PDF MG100Q2YS42 2-109C1A

    Untitled

    Abstract: No abstract text available
    Text: MG100Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG100Q2YS65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2


    Original     		PDF MG100Q2YS65H 2-95A4A

    Untitled

    Abstract: No abstract text available
    Text: MG100Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG100Q2YS65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2


    Original     		PDF MG100Q2YS65H 2-95A4A

    MG100Q2YS65H

    Abstract: No abstract text available
    Text: MG100Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG100Q2YS65H High Power & High Speed Switching Applications • High input impedance · Enhancement-mode · The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC


    Original     		PDF MG100Q2YS65H 2-95A4A MG100Q2YS65H

    MG100Q1JS40

    Abstract: No abstract text available
    Text: MG100Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1JS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode


    Original     		PDF MG100Q1JS40 2-108A4A MG100Q1JS40

    Untitled

    Abstract: No abstract text available
    Text: MG100Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (max) Enhancement-mode


    Original     		PDF MG100Q1ZS50 2-95A6A

    MG100Q2YS40

    Abstract: No abstract text available
    Text: MG100Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS40 Unit: mm High Power Switching applications Motor Control Applications l High input impedance l High speed : tf = 0.5µs Max trr = 0.5µs (Max) l Low saturation voltage : VCE (sat) = 4.0V (Max)


    Original     		PDF MG100Q2YS40 2-108A2A MG100Q2YS40

    MG100Q2YS40

    Abstract: No abstract text available
    Text: MG100Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS40 Unit: mm High Power Switching applications Motor Control Applications High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode


    Original     		PDF MG100Q2YS40 2-108A2A MG100Q2YS40

    MG100Q2YS1

    Abstract: No abstract text available
    Text: GTR MODULL SILICON N CHANNEL IGBT MG100Q2YS1 HI GH POWER S WIT C H I N G A P P L I C A T I O N S . Unit M O T O R C ONT R O L A P P L I C A T I O N S . in m m • High Input Impedance • High Speed : t f =0. 5fis Max. t r r = 0 . 5 (is ( M a x . ) •Low Saturación Voltage:


    OCR Scan     		PDF MG100Q2YS1 MG100Q2YS1

    BY575

    Abstract: No abstract text available
    Text: TOSHIBA MG100Q2YS50 MG100Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS U nit in mm M O T O R CONTRO L APPLICATIONS H igh Input Impedance High Speed : tf=0.3/*s Max. @ Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG100Q2YS50 BY575

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA INSULATED GATE BIPO LAR TRAN SISTO R MG100Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 1.Ojas Max. t|y = 0.5ns (Max.)


    OCR Scan     		PDF MG100Q2YS11 PW03890796

    MG100Q1ZS40

    Abstract: ED 05 Diode
    Text: TO SHIBA MG100Q1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 00 Q 1 Z S 4 0 HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf=0.5/*s Max. trr= 0.5/^s (Max.) • Low Saturation Voltage : v CE(sat) = 4 -o v (Max.)


    OCR Scan     		PDF MG100Q1ZS40 2-108A3A MG100Q1ZS40 ED 05 Diode

    MG100Q1ZS50

    Abstract: 9416 Diode
    Text: TOSHIBA MG100Q1ZS50 MG100Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • High Input Impedance High Speed : tf = 0.3 jus Max. @Induetive Load Low Saturation Voltage : VCE (sat) = 3-6 v (Max.)


    OCR Scan     		PDF MG100Q1ZS50 100Q1ZS50 2-95A6A MG100Q1ZS50 9416 Diode

    PJ-019 diode

    Abstract: pj 59 diode
    Text: T O SH IB A MG100Q1JS40 TOSHIBA GTR MODULE MG1QQ SILICON N CHANNEL IGBT n 1 K i n m m w r • w HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5^s Max. trr = 0.5/üs (Max.) Low Saturation Voltage • V cE(sat) = 4*0V (Max.)


    OCR Scan     		PDF MG100Q1JS40 PJ-019 diode pj 59 diode

    MG100Q2YS42

    Abstract: No abstract text available
    Text: TOSHIBA MG100Q2YS42 Mfii n n n ? v < : i 9 TO SH IBA GTR M O D U LE SILICON N CH AN N EL IGBT Unit in mm HIGH PO W ER SW ITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • 4-FAST-on-Tab#110 High Input Impedance High Speed : tf=0.5^s Max. trr^O .5 ¿us (Max.)


    OCR Scan     		PDF MG100Q2YS42 2-109C1A MG100Q2YS42

    Untitled

    Abstract: No abstract text available
    Text: MG100Q2YS42 Unit in inm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.5//s Max. trr = 0.5//s(Max.) Low Saturation Voltage : VcE(sat) = 4-0V (Max-) Enhancement-Mode Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG100Q2YS42

    Untitled

    Abstract: No abstract text available
    Text: MG100Q2YS42 T O SH IB A MG100Q2YS42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4-FAST-on-Tab#110 \ • • • • • • High Input Impedance High Speed : tf=0.5/*s M ax. trr= 0.5(a s (Max.)


    OCR Scan     		PDF MG100Q2YS42 2-109C1A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG100Q1JS40 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG100Q1 JS40 M G 1 0 0 Q 1 JS 4 0 HIGH P O W E R SWITCHING APPLICATIONS U nit in mm CHO PPER APPLICATIONS. 2~JZ<5 6 ± 0 3 • High Input Impedance • High Speed : t f= 0 .5 ^ s (Max.)


    OCR Scan     		PDF MG100Q1JS40 MG100Q1 2-108A4A Tc-25

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG100Q2YS51A MG1 0 0 Q 2 Y S 5 1 A TENTATIVE TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT HIGH PO W E R SWITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3,t<s Max. Inductive Load


    OCR Scan     		PDF MG100Q2YS51A 961001EAA1 10/vs

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG1Q0Q2YS42 T O SH IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG100Q2YS42 HIGH P O W E R SW IT C H IN G APPLICATIO N S. Unit in mm M O T O R C O N T R O L APPLIC ATIO N S. • High Input Impedance • High Speed : tf=0.5/;s Max. trr = 0.5//s (Max.)


    OCR Scan     		PDF MG1Q0Q2YS42 MG100Q2YS42

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG100Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 00 Q 1 Z S 5 0 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf = 0.3 jus Max. @Inductive Load • Low Saturation Voltage


    OCR Scan     		PDF MG100Q1ZS50

    igbt toshiba mg

    Abstract: MG100Q2YS50A
    Text: TO SH IBA MG100Q2YS50A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. /^ \T _3_J.*_T _3 i g / i u u u c u v e L /u au


    OCR Scan     		PDF MG100Q2YS50A 2-95A4A MG100Qtruments, igbt toshiba mg MG100Q2YS50A