Untitled
Abstract: No abstract text available
Text: MG200Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.)
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MG200Q1US51
15tended
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MG200Q1US51
Abstract: No abstract text available
Text: MG200Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode
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MG200Q1US51
MG200Q1US51
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Untitled
Abstract: No abstract text available
Text: MG200Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode
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MG200Q1US51
2-109F1A
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MG200Q1US41
Abstract: mg200q1us
Text: MG200Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 4.0V (Max.)
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MG200Q1US41
2-109A4A
MG200Q1US41
mg200q1us
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MG200Q1US51
Abstract: No abstract text available
Text: MG200Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm 2–M4 2–M6 4– 6.6 0.3 Low saturation voltage : VCE sat = 3.6V (Max.) E G E C 24 0.3 20 0.3 29 0.3 Enhancement-mode
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MG200Q1US51
2-109F1A
MG200Q1US51
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Untitled
Abstract: No abstract text available
Text: MG200Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) l Low saturation voltage : VCE (sat) = 4.0V (Max.)
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MG200Q1US41
2-109A4A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG200Q1US51 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG200 1 US51 H IG H P O W E R S W IT C H IN G AP PLIC A TIO N S M O T O R C O N T R O L A P P L IC A T IO N S • H ig h I n p u t Im p ed an ce • H i g h s p e e d : tf = 0 .3 /is M a x .
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MG200Q1US51
MG200
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MG200Q1US41
Abstract: No abstract text available
Text: TO SHIBA MG200Q1US41 M G 2 0 0 Q 1 US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 2-M 4 • • High Input Impedance High Speed : tf=0.5/^s Max. : trr = 0.5/^s (Max.) Low Saturation Voltage
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MG200Q1US41
2-109A4A
MG200Q1US41
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Untitled
Abstract: No abstract text available
Text: TO SHIBA MG200Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q1US41 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 2-M 4 • • High Input Impedance High Speed : tf= 0.5/iS Max. : trr = 0.5,us (Max.) Low Saturation Voltage
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MG200Q1US41
2-109A4A
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transistor JSW
Abstract: jSw Diode
Text: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US 5 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG200Q1US51
transistor JSW
jSw Diode
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Untitled
Abstract: No abstract text available
Text: MG200Q1US41 U nit in mm HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. • • • • • High Input Impedance High Speed : tf=0.5//s M ax. : trr = 0.5//s(Max.) Low Saturation Voltage : VçE(sat) =4.0V (Max.) Enhancement-Mode The Electrodes are Isolated from Case.
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MG200Q1US41
2-109A4A
Temp00
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Induetive Load Low Saturation Voltage ; v Uifi (sat) —°-ovuviaJi.;
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MG200Q1US51
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MG200Q1US51
Abstract: MG200Q1
Text: TOSHIBA MG200Q1US51 M G 2 0 0 Q 1 US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)
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MG200Q1US51
2-109F1A
Tc-25Â
MG200Q1US51
MG200Q1
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MG200Q1US51
Abstract: TV-19 tlf 106
Text: TO SHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. @Induetive Load • Low Saturation Voltage : VCE (Sat) = 3.6V (Max.)
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MG200Q1US51
2-109F1A
Tc-25Â
MG200Q1US51
TV-19
tlf 106
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG200Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q1US41 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 2-M 4 • • High Input Impedance High Speed : tf= 0.5/iS Max. : trr = 0.5,us (Max.) Low Saturation Voltage
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MG200Q1US41
2-109A4A
200Q1US41
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MG200Q1US1
Abstract: No abstract text available
Text: GTR MODULL SILICON N CHANNEL IGBT MG200Q1US1 HIGH POWER SWITCHING APPLICATIONS. U n i t i n mm MOTOR CONTROL APPLICATIONS. • H ig h I n p u t Im p e d a n c e • H igh S p e e d : t f = 0 . 5 u s M ax . t r r =0.5iis(Max.) • Low S a t u r a t i o n V o l t a g e : V^jr^s a t )= 4 . 0V (M ax. )
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MG200Q1US1
MG200Q1US1
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TRANSISTOR BC 629
Abstract: S408 S408 diode
Text: TOSHIBA MG200Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 0 0 Q 1 US41 U nit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 2 -m • • • High Input Impedance High Speed : tf= 0.5//s Max. : trr = 0.5,us (Max.) Low Saturation Voltage
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MG200Q1US41
TRANSISTOR BC 629
S408
S408 diode
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG200Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M r, 7 n n n 1 n <;n 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed tf —0.5//S Max. : (Max.) Low Saturation Voltage * v CE(sat) = 4*ov (Max.)
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MG200Q1US41
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GT250101
Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a
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2-99A1A
2-99B1A
GT250101
MG150J2YS40
MG75Q2YS11
MG400Q1US11
MG200Q1JS9
MG75J2YS40
MG50J6ES40
MG200Q2YS91
MG75J6ES40
mg100q2ys9
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MG15J6ES40
Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
Text: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40
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MG15J6ES40
MG2SJ6KS40
MG50J2YS50
MG50J6KS50
MG75J2YS50
MG75J6KS50
100J2YS50
MG100J6KS50
MG150J2YS50
MG200J2YS50
MG150Q2YS40
MG300J2YS50
MG300Q2YS40
MG75Q2YS40
MG25Q2YS40
MG200Q2YS40
MG300Q2YS4
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MG200J2YS50
Abstract: 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG200Q1US41 MG300Q1US41 MG300Q1US51 MG400J2YS50 mg200q2ys50
Text: MHTEPTEKC www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 M o A y n u IG B T $ u p M b i T o s h i b a fln a n a 3 0 H p a 6 o H nxT eM ne paT yp np0M3B0AMTenb Kofl: Uce lc Icm :o t -4 0 °C a o + 1 2 5 °C : T o s h ib a Ucesat npH lc Tr(typ.j Tf(typ.)
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flnana30H
ot-40Â
MG200Q1US41
2-109A4A
MG300Q1US41
MG300Q1US51
2-109F1A
MG400Q1US41
MG200J2YS50
2-94D4A
MG75Q2YS50
MG300J2YS50
2-109C1A
MG400J2YS50
mg200q2ys50
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IGBT 200A 1200V
Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D
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bup203
t0220)
BUP212
BUP213
BUP313
BUP313D
BUP314
BUP314D
GT20D101-T0s
GT20D201-T0s
IGBT 200A 1200V
T0247
T0220AB
BUP313D
IGBT IRG4BC20KD
igbt 20A 1200v
IGBT 1200V 60A
T0247A
BUP314D
MG50Q2YS40
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j2y transistor
Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,
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O220AB
O-126
j2y transistor
T15J10
MP4704
MG100M2CK1
2sb834
MP3103
MG50J6ES91
MP3002
mp4505
2sc497
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GT80J101
Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
Text: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412
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GT8J101
GT8J102
GT8Q101
GT15J101
GT15J102
GT8Q102
MG300J2YS50
MG400J1US51
MG400J2YS50
MG800J1US51
GT80J101
MG75Q2YS40
MG360V1US41
MG100Q2YS42
MG75J6ES50
GT60M301
MG15J6ES40
MG300Q2YS40
MG150Q2YS40
mg100j6es5
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