MG200Q1ZS11 Search Results

MG200Q1ZS11 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MG200Q1ZS11		Toshiba	GTR Module Silicon N Channel IGBT		Original	PDF
MG200Q1ZS11		Toshiba	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)		Scan	PDF

Catalog Datasheet	Type	Document Tags	PDF
MG200Q1ZS11 Abstract: No abstract text available Text: MG200Q1ZS11 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS11 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 1.0µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.)	Original	MG200Q1ZS11 2-109B5A MG200Q1ZS11	PDF
ss125c Abstract: No abstract text available Text: TOSHIBA MG200Q1ZS11 MG2 0 0 Q 1 Z S 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=1.0,«s Max. trr = 0.5/us (Max.) Low Saturation Voltage : V c e (sat) = 2.7V (Max.)	OCR Scan	MG200Q1ZS11 sS125 ss125c	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A MG200Q1ZS11 MG200Q1ZS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=1.0,«s Max. trr = 0.5^s (Max.) Low Saturation Voltage •	OCR Scan	MG200Q1ZS11 2-109B5A	PDF
HT 4906 Abstract: diode 3a05 MG200Q1ZS11 3A05 diode Text: TOSHIBA M G200Q1ZS11 MG2 0 0 Q 1 Z S 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • High Input Impedance High Speed : tf=l. Vs(M ax. trr = 0.5^8 (Max.) Low Saturation Voltage	OCR Scan	MG200Q1ZS11 MG200Q1 2-109B5A HT 4906 diode 3a05 MG200Q1ZS11 3A05 diode	PDF