Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MG75Q Search Results

    SF Impression Pixel

    MG75Q Price and Stock

    Toshiba America Electronic Components MG75Q2YS1-AC.F

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MG75Q2YS1-AC.F 48
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Toshiba America Electronic Components MG75Q1JS43

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MG75Q1JS43 6
    • 1 $124.54
    • 10 $119.75
    • 100 $119.75
    • 1000 $119.75
    • 10000 $119.75
    		Buy Now

    Toshiba America Electronic Components MG75Q2YS51

    INSULATED GATE BIPOLAR TRANSISTOR, 100A I(C), 1200V V(BR)CES, N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MG75Q2YS51 2
    • 1 $42.9
    • 10 $42.9
    • 100 $42.9
    • 1000 $42.9
    • 10000 $42.9
    		Buy Now

    MG75Q Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG75Q1BS11 Toshiba N channel IGBT Original PDF
    MG75Q1BS11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75Q1BS11 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG75Q1BS11 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG75Q1JA40 Toshiba HIGH POWER SWITCHING APPLICATIONS CHOPPER APPLICATIONS Scan PDF
    MG75Q1JS40 Toshiba Silicon N-channel IGBT GTR module for high power switching, chopper applications Original PDF
    MG75Q1ZS50 Toshiba High Power Switching Applications Motor Control A Original PDF
    MG75Q1ZS50 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG75Q2DS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75Q2YK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75Q2YK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75Q2YK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG75Q2YK1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG75Q2YK1 Westcode Semiconductors NPN transistor for high power switching and notor control applications, 1200V, 75A Scan PDF
    MG75Q2YL1 Unknown Scan PDF
    MG75Q2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75Q2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75Q2YS11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75Q2YS11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75Q2YS11 Toshiba GTR Module: Silicon N-Channel IGBT Scan PDF

    MG75Q Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TOSHIBA IGBT DATA BOOK

    Abstract: TOSHIBA IGBT MG75Q1BS11 IGBT Guide
    Text: MG75Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75Q1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C


    Original     		MG75Q1BS11 2-33D2A TOSHIBA IGBT DATA BOOK TOSHIBA IGBT MG75Q1BS11 IGBT Guide PDF

    MG75Q1BS11

    Abstract: No abstract text available
    Text: MG75Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75Q1BS11 High Power Switching Applications Motor Control Applications l Enhancement-mode l The electrodes are isolated from case. Unit: mm Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C


    Original     		MG75Q1BS11 2-33D2A MG75Q1BS11 PDF

    Untitled

    Abstract: No abstract text available
    Text: MG75Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1JS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode


    Original     		MG75Q1JS40 2-94D1A PDF

    Untitled

    Abstract: No abstract text available
    Text: MG75Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS51 High Power Switching Applications Motor Control Applications l High input impedance l High speed : tf = 0.3 µs Max @Inductive load l Low saturation voltage : CE (sat) = 3.6 V (Max) l Enhancement-mode


    Original     		MG75Q2YS51 2-108D1A PDF

    MG75Q2YS50

    Abstract: IGBT control circuit
    Text: MG75Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS50 High Power Switching Applications Motor Control Applications l High input impedance l High speed : tf = 0.3 µs Max @Iinductive load l Low saturation voltage : VCE (sat) = 3.6 V (Max) l Enhancement-mode


    Original     		MG75Q2YS50 2-94D4A MG75Q2YS50 IGBT control circuit PDF

    MG75Q1ZS50

    Abstract: No abstract text available
    Text: MG75Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs Max @inductive load Low saturation voltage : VCE (sat) = 3.6 V (Max) Enhancement-mode


    Original     		MG75Q1ZS50 2-94D7A MG75Q1ZS50 PDF

    MG75Q2YS42

    Abstract: No abstract text available
    Text: MG75Q2YS42 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS42 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs Max trr = 0.5µs (Max) l Low saturation voltage : VCE(sat) = 4.0V (Max)


    Original     		MG75Q2YS42 2-108A2A MG75Q2YS42 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		MG75Q2YS50 Tempe30 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG75Q1BS11 M G 7 5 Q 1 BS1 1 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT U nit in mm HIGH POWER; SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= l.O.us Max. Low Saturation Voltage: V q e (sat) = 2.7V (Max.)


    OCR Scan     		MG75Q1BS11 2-33D1A PDF

    MG75Q2YS52

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE MG75Q2YS52 MG75Q2YS52 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load Low Saturation Voltage : v CE(sat) = 3-ev (Max.)


    OCR Scan     		MG75Q2YS52 2-109C4AGE 10//s MG75Q2YS52 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG75Q1JS40 MG75Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M5 • • 2~05.6±o.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage


    OCR Scan     		MG75Q1JS40 2-94D3A Is75Q1JS40 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG75Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • 4 —FAST —ON —TAB #110 High Input Impedance High Speed : tf=0.5,«s Max. trr = 0.5,«s (Max.)


    OCR Scan     		MG75Q2YS40 2-94D1A 11in--- PDF

    MG75Q2YS42

    Abstract: 2805 diode bridge diode 3a05
    Text: TOSHIBA MG75Q2YS42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS42 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= O.ô^s Max. trr = 0.5/æ (Max.) Low Saturation Voltage : v CE(sat) =4.0V (Max.) Enhancement-Mode


    OCR Scan     		MG75Q2YS42 2-108A2A MG75Q2YS42 2805 diode bridge diode 3a05 PDF

    MG75Q1JS40

    Abstract: No abstract text available
    Text: T O SH IB A MG75Q1JS40 TOSHIBA GTR MODULE m •« ■ SILICON N CHANNEL IGBT r , 7 r n 1 i<;An m agr ■ w mm ■ ^ur HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5^s Max. trr = 0.5/üs (Max.) Low Saturation Voltage


    OCR Scan     		MG75Q1JS40 MG75Q1JS40 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= 0 .3 ^ s Max. Inductive Load Low Saturation Voltage • V c e (sat) —3.6V (Max.)


    OCR Scan     		MG75Q2YS50 TjS125 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG75Q2YS51 TOSHIBA GTR MODULE • « ■ a SILICON N CHANNEL IGBT Mr ■ mm Mr ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : t f = 0 .3 ^ s Max. Inductive Load Low Saturation Voltage • V c e (sat) —3.6V (Max.)


    OCR Scan     		MG75Q2YS51 JunctioG75Q2YS51 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG75Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M f i 7a > ; n 7 Y < ; n n •« ■ Mr ■ Mr ^wr HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=0.5,«s Max. trr = 0.5,«s (Max.) Low Saturation Voltage


    OCR Scan     		MG75Q2YS40 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MG75Q1JS40 MG75Q1 JS40 T O SH IB A GTR M O D U L E SILICO N N C H A N N E L IGBT HIGH P O W E R SW IT C H IN G APPLICATIO N S. Unit in mm C H O PPE R APPLIC ATIO N S. • • High Input Impedance High Speed : tf=0.5/^s Max. trr = 0.5/iS (Max.)


    OCR Scan     		MG75Q1JS40 MG75Q1 961001EAA2 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG75Q1JS40 MG75Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • 3-M 5 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.)


    OCR Scan     		MG75Q1JS40 2-94D3A PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG75Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT MG75Q2YS50 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS High Input Impedance High Speed : tf= 0.3/iS Max. @Inductive Load Low Saturation Voltage : ^ CE (sat) =3.6V (Max.)


    OCR Scan     		MG75Q2YS50 l25ec PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG75Q1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 7 5 Q 1 BS1 1 U n it in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance H ig h S p eed : tf=1.0,«s Max. Low Saturation Voltage: V q e ( s a t ) ~


    OCR Scan     		MG75Q1BS11 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG75Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		MG75Q2YS51 10/us PDF

    X15V

    Abstract: MG75Q2YS51
    Text: TOSHIBA MG75Q2YS51 MG75Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode


    OCR Scan     		MG75Q2YS51 2-108D1A 10//s X15V MG75Q2YS51 PDF

    X15V

    Abstract: DT700 MG75Q2YS50 MG75Q2 mg75q2ys
    Text: TOSHIBA MG75Q2YS50 MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode


    OCR Scan     		MG75Q2YS50 2-94D4A 10//s X15V DT700 MG75Q2YS50 MG75Q2 mg75q2ys PDF