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    KMZ11B1

    Abstract: hx 36 MLC716 MS-012AA SC17 KA 209 MGD804 MSA925
    Text: DISCRETE SEMICONDUCTORS DATA SHEET KMZ11B1 Magnetic field sensor Preliminary specification Supersedes data of 1996 Nov 08 File under Discrete Semiconductors, SC17 1996 Dec 11 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ11B1 DESCRIPTION


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    PDF KMZ11B1 KMZ11B1 SCA52 147021/00/03/pp8 hx 36 MLC716 MS-012AA SC17 KA 209 MGD804 MSA925

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    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification Magnetic field sensor KMZ11B1 DESCRIPTION The KMZ11B1 is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field


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    PDF KMZ11B1 KMZ11B1 MGD804 OT96-1 076E03S MS-012AA