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    MGF1954A Search Results

    MGF1954A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGF1954A Mitsubishi Original PDF
    MGF1954A-01 Mitsubishi Original PDF

    MGF1954A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGF1954A-01

    Abstract: k MESFET S parameter MGF1954A
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1954A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1954A is a 200mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power


    Original     		PDF MGF1954A MGF1954A 200mW 23dBm 12GHz MGF1954A-01 MGF1954A-01 k MESFET S parameter

    MGF1954A

    Abstract: No abstract text available
    Text: October /2003 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1954A Microwave Power MES FET Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF1954A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		PDF MGF1954A MGF1954A 23dBm 12GHz 3000pcs

    mitsubishi microwave

    Abstract: MGF1954A
    Text: Aug. /2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1954A Microwave Power MES FET Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF1954A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		PDF MGF1954A MGF1954A 23dBm 12GHz 100mA 3000pcs mitsubishi microwave

    FET GAAS marking a

    Abstract: gaas fet marking mitsubishi top side marking
    Text: < Power GaAs FET > MGF1954A Leadless ceramic package DESCRIPTION The MGF1954A power MES FET is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB


    Original     		PDF MGF1954A MGF1954A 23dBm 12GHz 100mA 000pcs/reel FET GAAS marking a gaas fet marking mitsubishi top side marking

    Untitled

    Abstract: No abstract text available
    Text: Aug. /2004 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1954A Microwave Power MES FET Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF1954A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		PDF MGF1954A MGF1954A 23dBm 12GHz 100mA 3000pcs

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


    Original     		PDF H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf

    gaas fet marking B

    Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
    Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source


    Original     		PDF QL-1104E-A July/2008) GD-26, MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A MGF1954A MGF4851A gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"