MGF4918D
Abstract: MGF4314D MGF4919F MGF4318D MGF4316D MGF4919 MGF4319F MGF4317D MGF-4317D MGF4914D
Text: LOW NOISE InGaAs HEMT M G F 4 x x x x Series T y p ic a l C h aracteristics Type MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E MGF4318E MGF4316F MGF4319F MGF4416D MGF4417D MGF4418D MGF4511D MGF4714AP MGF4914D MGF4916D MGF4917D MGF4918D MGF4914E MGF4918E MGF4916F
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GD-16
GD-15
GD-18
MGF4314D
MGF4316D
MGF4317D
MGF4318D
MGF4314E12
MGF4918D
MGF4919F
MGF4919
MGF4319F
MGF-4317D
MGF4914D
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dfp 740
Abstract: DFP 830 M5M27C102P MGF4511D m5m27c102pffp
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4511D S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4511D super-low-noise HEMT High Electron Mobility Transistor is designed for use in K band ampli fiers. The new metal-ceramic package is used to reduce
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MGF4511D
MGF4511D
18GHz
GD-15
M5M27C102P
RV-15
1048576-BIT
65536-W0RD
16-BIT)
dfp 740
DFP 830
m5m27c102pffp
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MGF1200
Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.
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MGF1102
MGF1302
MGF1303B
MGFI323
MGF1402B
MGFI412B
MGF1403B
MGF1423B
MGFI425B
MGFI902B
MGF1200
MGF4310
MGF1100
MGF1412
MGF4301
MGF1304
MGF7003
MGF4305A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF4511D SU PER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 5 1 1 D super-low -noise HEMT High Electron M ob ility Transistor is designed fo r use in K band am pli fiers. The new m etal-ceram ic package is used to reduce
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OCR Scan
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PDF
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GF4511D
078MINX
MGF4511D
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