MGF4921AM
Abstract: 5442
Text: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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MGF4921AM
MGF4921AM
15ric
5442
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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MGF4921AM
MGF4921AM
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MGF4921AM
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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MGF4921AM
MGF4921AM
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MGF4921AM
Abstract: transistor GaAs FET low noise 4Ghz
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Ｍar./2009 MGF4921AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4921AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers.
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MGF4921AM
MGF4921AM
transistor GaAs FET low noise 4Ghz
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MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
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H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
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gaas fet marking B
Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source
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QL-1104E-A
July/2008)
GD-26,
MGF4951A/52A
MGF4953A/54A
MGF1951A
MGF1952A
MGF1953A
MGF1954A
MGF4851A
gaas fet marking B
gaas fet micro-X Package marking
gaas fet marking a
marking K gaas fet
MGF1961A
gaas fet micro-X Package
gaas fet marking J
MGF1964A
MGF1963A
Micro-X marking "K"
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