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    MGF4953A Price and Stock

    Mitsubishi Electric MGF4953A-65

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    Bristol Electronics MGF4953A-65 147
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    Mitsubishi Electric MGF4953A

    SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics MGF4953A 8,834
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    • 100 $1.044
    • 1000 $0.848
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    MGF4953A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGF4953A Mitsubishi TRANS JFET N-CH 2V 60MA 3CERAMIC PACKAGE T/R Original PDF
    MGF4953A Mitsubishi SUPER LOW NOISE INGAAS Scan PDF

    MGF4953A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HEMT marking K

    Abstract: MGF4953A
    Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		PDF MGF4953A MGF4953A 12GHz 000pcs/reel HEMT marking K

    MGF4953A

    Abstract: No abstract text available
    Text: Feb./2000 Preliminary MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package Gs NFmin. Associated gain VDS=2V, Minimum noise figure ID=10mA MGF4953A f=12GHz MGF4954A Fig. 1 Top 12.0 - Side 13.5 0.45 0.65


    Original     		PDF MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A

    mgf4953a

    Abstract: mgf4953 low noise x band hemt transistor MGF4954A InGaAs HEMT mitsubishi transistor GaAs FET s parameters
    Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band


    Original     		PDF June/2004 MGF4953A/MGF4954A MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A mgf4953a mgf4953 low noise x band hemt transistor MGF4954A InGaAs HEMT mitsubishi transistor GaAs FET s parameters

    MGF4953A

    Abstract: mgf4953 s2v 92 S2V40
    Text: June/2004 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    Original     		PDF June/2004 MGF4953A/MGF4954A MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A 12GHz MGF4953A mgf4953 s2v 92 S2V40

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		PDF MGF4953A MGF4953A 12GHz 000pcs/reel

    Untitled

    Abstract: No abstract text available
    Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band


    Original     		PDF June/2004 MGF4953A/MGF4954A MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


    Original     		PDF H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf

    gaas fet marking B

    Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
    Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source


    Original     		PDF QL-1104E-A July/2008) GD-26, MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A MGF1954A MGF4851A gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    mgf4953a

    Abstract: MGF4954A
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MG F4953A/MG F4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    OCR Scan     		PDF F4953A/MG F4954A MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A MGF4953A June/2000 MGF4954A

    low noise x band hemt transistor

    Abstract: Gan hemt transistor x band MGF4953A
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953A/MGF4954A _ SUPER LOW NOISE InGaAs HEMT Leodess Ceramic Package D ES C R IP TIO N Outline Drawing The MGF4953A/MGF4954A super low noise HEMT (High Electron M oM ty Transistor) is designed for use in C to K band


    OCR Scan     		PDF MGF4953A/MGF4954A MGF4953A/MGF4954A 12GHz MGF4953A MGr49S4A May/2000 low noise x band hemt transistor Gan hemt transistor x band MGF4953A