MGFC38V5964 Search Results

MGFC38V5964 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGFC38V5964		Mitsubishi	5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET		Original	PDF
MGFC38V5964		Mitsubishi	5.9-6.4 BAND 6W Internally Matched GaAs FET		Scan	PDF

MGFC38V5964 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC38V5964 5.9 – 6.4 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	PDF	MGFC38V5964 MGFC38V5964 -45dBc 27dBm
mitsubishi Abstract: MGFC38V MGFC38V5964 Text: MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V5964 5.9 ~ 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC	Original	PDF	MGFC38V5964 mitsubishi MGFC38V MGFC38V5964
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC38V5964 5.9 – 6.4 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	PDF	MGFC38V5964 MGFC38V5964 -45dBc 27dBm
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	PDF	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
pj 59 Abstract: MGFC38V5964 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V5964 5 .9 — 6 .4 G H z BAN D 6 W IN TE R N A L L Y M A TC H E D GaAs F E T DESCRIPTION The M G F C 3 8 V 5 9 6 4 is an in te rna lly im p e d a n ce -m a tch e d GaAs power FET especially designed fo r use in 5 . 9 — 6 .4	OCR Scan	PDF	MGFC38V5964 MGFC38V5964 ltem-01: ltem-51INPUT pj 59
3642G Abstract: No abstract text available Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m	OCR Scan	PDF