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    MGFC45V3642A Search Results

    MGFC45V3642A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC45V3642A Mitsubishi 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC45V3642A Mitsubishi 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET Original PDF

    MGFC45V3642A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC45V3642A 3.6 – 4.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC45V3642A MGFC45V3642A -45dBc

    MGFC45V3642A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : m m O U TLIN E The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC45V3642A MGFC45V3642A -45dBc /25deg June/2004

    GAAS FET AMPLIFIER f 10Mhz to 2 GHz

    Abstract: MGFC45V3642A
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC45V3642A is an internally impedance-matched


    Original
    PDF MGFC45V3642A MGFC45V3642A GAAS FET AMPLIFIER f 10Mhz to 2 GHz

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC45V3642A MGFC45V3642A -45dBc 25deg June/2004

    MGFC45V3642A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC45V3642A MGFC45V3642A -45dBc 25deg

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC45V3642A 3.6 – 4.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC45V3642A MGFC45V3642A -45dBc

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original
    PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY Notice: This is not a final specification. Some parametric lim its are subject to change. MGFC45V3642A 3.6 DESCRIPTION - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET u n it : m m OUTLINE The M G F C 45V 3642A is an in ternally im ped ance-m a tched


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    PDF MGFC45V3642A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY Notice: This is not a final specification. Som e param etric limits are subject to change. MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION T he M G F C 45V 3642A is an in ternally im pedance-m atched


    OCR Scan
    PDF MGFC45V3642A -45dBc