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    MGP11N60DE

    Abstract: 221A-06
    Text: MOTOROLA Order this document by MGP11N60DE/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGP11N60DE Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO–220 11 A @ 90°C 15 A @ 25°C


    Original     		PDF MGP11N60DE/D MGP11N60DE MGP11N60DE/D* MGP11N60DE 221A-06

    11n60

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP11N60DE/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGP11N60DE In sulated G ate Bipolar TVansistor with A n ti-P arallel Diode IGBT & DIODE IN T0-220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE


    OCR Scan     		PDF MGP11N60DE/D 2PHX34714-0 11n60