MH 1051 Search Results

mil grade LED lamps

Abstract: 103x10
Contextual Info: Spec No. Date Page Ver. A-MH-038-00 2008/11/25 1/8 A-00 Super Top LED STL / E3 Series PART NO. : EOM-FTxSU0-xx Technical Description STL/E3 LED is EOI’s new generation high power LED package. The package is designed to produce high light output with good reliability performance at very high driving current, and allows designer to

mil grade LED lamps

Abstract: ULS-11
Contextual Info: Spec No. Date Page Ver. A-MH-039-00 2008/11/25 1/8 A-00 Super Top LED STL / E3 Series PART NO. : EOM-FTxSU0-xx Technical Description STL/E3 LED is EOI’s new generation high power LED package. The package is designed to produce high light output with good reliability performance at very high driving current, and allows designer to

M83446/08

Contextual Info: # IN Re DU fe CT re AN nc e CE (µ TO H LE ) RA NC Q E MI NI MU M TE ST FR EQ UE SR NC F MI Y (M NI MU Hz DC ) M R ( MH MA ES z) XI IST M A CU UM NC (O E R HM MA RE S X. NT (m RA ) A) TI NG DA SH PA RT Micro i Chip Inductors MI L NU MB ER Series 105 & 108

Contextual Info: # IN Re DU fe CT re AN nc e CE (µ TO H LE ) RA NC Q E MI NI MU M TE ST FR EQ UE SR NC F MI Y (M NI MU Hz DC ) M R ( MH MA ES z) XI IST M A CU UM NC (O E R HM MA RE S X. NT (m RA ) A) TI NG DA SH PA RT Micro i Chip Inductors MI L NU MB ER Series 105 & 108

SHDSL chips

Abstract: 1085 CT Globespan chip set smd 1034 BCM6010 BT8952 BT8960 SK70704
Contextual Info: HDSL Coupling Transformers FEATURES: •Supports Industry Standard HDSL/HDSL2 Transceivers •Operating Temperature Range of -40 C to 85°C •Excellent Total Harmonic Distortion Characteristics •Meets Standard Dielectric Withstanding Voltage Requirements

vogt -sumida-5432001800

Abstract: vogt 573 10 270 20 vogt 545 vogt a3 VOGT W1 573 10 270 20 545 01 122 00 vogt VOGT K3 vogt IL 050 321 31 01 vogt 545 23 127 00 vogt transformer 545 35
Contextual Info: COMPONENTS | MODULES | CORES 2011 SUMIDA Components & Modules GmbH Dr. Hans-Vogt-Platz 1 | D-94130 Obernzell Phone: +49/85 91/937-100 Fax: +49/85 91/937-103 E-Mail: contact@sumida-eu.com Internet: www.sumida-eu.com COMPONENTS | MODULES | CORES -2- INTRODUCTION

Contextual Info: UM10512 NXP 半导体 基于 UBA2211 的 230V 12WCFL 演示板 UM 10512 基于 SSL2109 的参考板 版本.1—2012 年 1 月 10 日 用户手册 文档信息 信息 内容 关键字 SSL2109，buck，控制器，参考板，LED 驱动，SSL2108，改 进型 LED 灯

BUD636A

Contextual Info: BUD636A Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature

BUD636A

Contextual Info: BUD636A Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature Optimized RBSOA

power transistor Ic 4A NPN smd

Abstract: BUD636A ic 8853
Contextual Info: BUD636A TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor SWOT D Very low dynamic saturation D HIGH SPEED technology D Very low operating temperature D Planarpassivation D Optimized RBSOA D 100 kHz switching rate

transistor SMD 520

Abstract: BUD636A
Contextual Info: BUD636A TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planarpassivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature

BUF636A

Contextual Info: BUF636A TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planarpassivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

BUF636A

Abstract: buf636
Contextual Info: BUF636A TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor SWOT D HIGH SPEED technology D Planarpassivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature

BUF636A

Abstract: 5V rectifier ic
Contextual Info: BUF636A Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature

2a1100

Abstract: BUF620
Contextual Info: BUF620 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature

BUF620

Contextual Info: BUF620 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor SWOT D HIGH SPEED technology D Planarpassivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature

diode cc 3053

Abstract: 2n3772 EQUIVALENT 2N3771 1N1186A 2N3772 2n3771 equivalent 2N3772 JAN
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 January 2009. MIL-PRF-19500/413F 15 October 2008 SUPERSEDING MIL-PRF-19500/413E 27 June 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER,

diode cc 3053

Abstract: cc 3053 2n3771 equivalent cc 3053 diode 2N3771 equivalent transistor 2n3772 EQUIVALENT 2n3771 2N3772 K 3053 TRANSISTOR MIL-PRF19500
Contextual Info: This documentation process conversion measures necessary to comply with this revision shall be completed by 30 September 1999 INCH-POUND MIL-PRF-19500/413C 30 July 1999 SUPERSEDING MIL-S-19500/413B 24 March 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER

BUF620

Contextual Info: BUF620 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature

IC 9122

Abstract: BUF620 2a1100 s295
Contextual Info: BUF620 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planarpassivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

tt 2206 horizontal

Abstract: ticomel transformer tt 2206 info OMF125 7414 transistor de audio fp 1016 datasheet T3j horizontal transistor tt 2206 250V 595 BC 0712 fsm 6045
Contextual Info: SCHURTER develops, munufactures and markets components for the electronics industries worlwide. SCHURTER INC 447 Aviation Blvd Santa Rosa, CA 95403 Tel: +1 +707 636 3000 Fax: +1 +707 636 3033 info@schurterinc.com www.schurterinc.com the schurter Range at a Glance

C48U

Abstract: S16884 2N6286 2N6287 3041 v transistor equivalent 2N6287 C-48U
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 22 September 2009. INCH POUND MIL-PRF-19500/505E 22 July 2009 SUPERSEDING MIL-PRF-19500/505D 10 January 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER,

2n6284 equivalent

Abstract: S16884 2N6283 2N6284
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 February 2009. MIL-PRF-19500/504E 18 November 2008 SUPERSEDING MIL-PRF-19500/504D 29 June 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER,

2N5683 equivalent

Abstract: 2N5684 MARKING BB1 PNP MARKING BB1 2N5683 MIL-PRF19500 ck50 case ck50 2N5684 JANTX
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 June 2007. MIL-PRF-19500/466C 13 March 2007 SUPERSEDING MIL-PRF-19500/466B 19 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER,