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    65756

    Abstract: No abstract text available
    Text: HM 65756 MATRA MHS 32 K x 8 High Speed CMOS SRAM Introduction The HM 65756 is a high speed CMOS static RAM organised as 32,768 × 8 bits. It is manufactured using MHS’s high performance CMOS technology. Easy memory expansion is provided by an active low chip


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    HM-65756 65756 PDF

    65756

    Abstract: MHS 65756 L65756
    Text: L 65756 MATRA MHS 32 K x 8 High Speed CMOS SRAM 3.3 Volt Description The L 65756 is a high speed CMOS static RAM organised as 32,768 × 8 bits. It is manufactured using MHS’s high performance CMOS technology. The L 65756 provides fast access time of 25 ns for a


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    MHS 65756

    Abstract: 65756
    Text: L 65756 32 K x 8 High Speed CMOS SRAM 3.3 Volts Description The L 65756 is a high speed CMOS static RAM organised as 32,768 x 8 bits. It is manufactured using MHS’s high performance CMOS technology. The L 65756 provides fast access time of 25 ns for a 3 volts power supply.


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    SMD5962 MHS 65756 65756 PDF

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G PDF

    P-Channel Depletion-Mode

    Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
    Text: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385


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    2N5547JANTX 2N5547JANTXV 2N4856JAN 2N6660JANTX 2N4856JANTX 2N6660JANTXV 2N4856JANTXV 2N6661JAN 2N4857JAN 2N6661JANTX P-Channel Depletion-Mode MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545 PDF

    TRANSISTOR B737

    Abstract: MD80C31 smd TRANSISTOR code marking 8K 67202FV PGA300 5962-8506401MQA ERC32SIM marking code RAD SMD Transistor npn ISO DIMENSIONAL certificate formats 67205E
    Text: Integrated Circuits for Aerospace and Defense Short Form 1998 16 June 1998 Publisher: TEMIC Semiconductors La Chantrerie BP 70602 44306 Nantes Cedex 03 FRANCE Fax: +33 2 40 18 19 60 E:mail nantes.marcom@temic.fr World Wide Web: http://www.temic.de 16 June 1998


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    Untitled

    Abstract: No abstract text available
    Text: Tem ic HM 65756 MATRA MHS 32 K x 8 High Speed CMOS SRAM Introduction The HM 65756 is a high speed CMOS static RAM organised as 32,768 x 8 bits. It is manufactured using MHS’s high performance CMOS technology. Easy memory expansion is provided by an active low chip


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    HM-65756 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic L 65756 MATRA MHS 32 K X 8 High Speed CMOS SRAM 3 3 Volt Description The L 65756 is a high speed CMOS static RAM organised as 32,768 x 8 bits. It is manufactured using MHS’s high performance CMOS technology. The L 65756 provides fast access time of 25 ns for a


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    LA 5756

    Abstract: MATRA MHS HM* 28 pins SOIC pack j32-1
    Text: T e m ic MATRA MHS_ HM 65756 32 K x 8 High Speed CMOS SRAM Introduction The HM 65756 is a high speed CMOS static RAM organised as 32,768 x 8 bits. It is manufactured using MHS’s high performance CMOS technology. Easy memory expansion is provided by an active low chip


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    HM-65756 LA 5756 MATRA MHS HM* 28 pins SOIC pack j32-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic L 65756 S e m i c o n d u c t o r s 32 K X 8 High Speed CMOS SRAM 3.3 Volts Description The L 65756 is a high speed CMOS static RAM organised as 32,768 x 8 bits. It is manufactured using MHS’s high performance CMOS technology. The L 65756 provides fast access time of 25 ns for a


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    0DQ73C PDF

    65756

    Abstract: No abstract text available
    Text: DATA SHEET_ HM 65756 32 K x 8 HIGH SPEED CMOS SRAM FEATURES 300 AND 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2 000 V ELECTROSTATIC DISCHARGE OUTPUT ENABLE SINGLE 5 VOLT SUPPLY


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    65756/Rev 65756 PDF

    INS300

    Abstract: No abstract text available
    Text: Tem ic HM 65756 Semi c on d uc t or s 32 K x 8 High Speed CMOS SRAM Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Description The HM 65756 is a high speed CMOS static RAM organised as 32,768 x 8 bits. It is manufactured using


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    D5962-88662 INS300 PDF

    T-32 KX

    Abstract: 20N30
    Text: Mi HM 65756 DATA SHEET_ 32 K X 8 HIGH SPEED CMOS SRAM FEATURES FAST ACCESS TIME COMMERCIAL: 20/25/35/45 ns AUTOMOTIVEflNDUSTRIAL/MILITARY: 25/35/45 ns LOW POWER CONSUMPTION ACTIVE: 880 mW STANDBY: 220 mW WIDE TEMPERATURE RANGE: —55 °C TO +125 °C


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    -Ceramic28pins600mils 65756/RSV T-32 KX 20N30 PDF

    1202z

    Abstract: MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3
    Text: Tem ic SMD Semiconductors Standard Military Drawings SMD Number Features TEMIC Part Number Package 5962-3829409MXA 55 ns SKxH SRAM HM Î E-65764N/883 CDIL28 60Í mils 5962-3829409MYC 55 ns 8Kx8 SRAM HM4-65764N/883 LCC32 5962-3829409MZA 55 ns 8Kx8 SRAM HMI-65764N/883


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    5962-3829409MXA 5962-3829409MYC 5962-3829409MZA 5962-3829411MXA 5962-382941IMYC 2-3H29411MZA 5962-3829413MX 5962-3829413MYC 5962-3829413MZA 5962-3829415MYC 1202z MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3 PDF

    MHS 65756

    Abstract: HM1-65756
    Text: 41E MATRA SñbñMSfc. D 00G5171 5ñS • M N H S M H S January 1991 HM 65756 HI-REL DATA SHEET 32 k X 8 HIGH SPEED CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE OUTPUT ENABLE


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    00G5171 MHS 65756 HM1-65756 PDF

    65756

    Abstract: No abstract text available
    Text: Tem ic L 65756 S emi co nd uct or s 32 K X 8 3.3 Volts High Speed CMOS SRAM Short description. Please refer to the full datasheet available on T EM IC web for detailed technical inform ation. Description The L 65756 is a high speed CM OS static RAM organised


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    PDF

    HM65756

    Abstract: a12g hm-65756
    Text: hm i electronic June 1992 HM 65756 HI-REL DATA SHEET_ 32 k x 8 HIGH SPEED CMOS SRAM FEATURES 1 TTL COMPATIBLE INPUTS AND OUTPUTS FAST ACCESS TIME : 25*/35/45/55 ns , LOW POWER CONSUMPTION A C T IV E : 825 mW S T A N D B Y : 190 mW ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN


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    Untitled

    Abstract: No abstract text available
    Text: m hSi March 1994 HM 65756 DATA SHEET 32 K x 8 HIGH SPEED CMOS SRAM FEATURES . 300 AND 600 MILS WIDTH PACKAGE . TTL COMPATIBLE INPUTS AND OUTPUTS . ASYNCHRONOUS . CAPABLE OF WITHSTANDING GREATER THAN 2 000 V ELECTROSTATIC DISCHARGE . OUTPUT ENABLE . SINGLE 5 VOLT SUPPLY


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    HM-65756 32pins 28pins 65756/Rev PDF

    MHS 65756

    Abstract: TELIC HM-65756 65756 DIL 28 MATRA MHS HM* 28 pins HM65756 mhs hm1E-65756
    Text: MRE D • Sfibô4Sb □□□1247 TS7 ■ HAT RA Preliminary lllirm ll Mf l HS M H S September 1990 -7W & -Z 5 - / 3 DATA SHEET_ HM 65756 32 K x 8 HIGH SPEED CMOS SRAM FEATURES 300 AND 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS


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    HM-65756 MHS 65756 TELIC 65756 DIL 28 MATRA MHS HM* 28 pins HM65756 mhs hm1E-65756 PDF