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    MHZ RF AMPLIFIER MODULE Search Results

    MHZ RF AMPLIFIER MODULE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    MHZ RF AMPLIFIER MODULE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AM020331SF-2D

    Abstract: mhz rf amplifier module class a power amplifier
    Text: The RF Power House 225 - 300 MHz 2 Watt Power Amplifier AM020331SF-2D DESCRIPTION AMCOM's AM020331SF-2D is a UHF Band Power Amplifier designed for FEATURES high power RF applications. It operates from 225 to 300 MHz and delivers a • Class A Power Amplifier


    Original     		PDF AM020331SF-2D AM020331SF-2D mhz rf amplifier module class a power amplifier

    5-53P

    Abstract: S-AV10H S-AV10L
    Text: S-AV10L,S-AV10H TOSHIBA RF Power Amplifier Module S-AV10L,S-AV10H VHF RF Power Amplifier Module Unit: mm • High gain: Po ≥ 14 W, Gp ≥ 1.85dB, ηT ≥ 40% · S-AV10L 135~155 MHz · S-AV10H 150~175 MHz Maximum Ratings Tc = 25°C Characteristics Symbol


    Original     		PDF S-AV10L S-AV10H S-AV10H 5-53P

    S-AV10L

    Abstract: "RF Power Amplifier" "RF Power" 5-53P S-AV10H S-AV10
    Text: S-AV10L,S-AV10H TOSHIBA RF Power Amplifier Module S-AV10L,S-AV10H VHF RF Power Amplifier Module Unit: mm • High gain: Po ≥ 14 W, Gp ≥ 1.85dB, ηT ≥ 40% • S-AV10L 135~155 MHz • S-AV10H 150~175 MHz Maximum Ratings Tc = 25°C Characteristics Symbol


    Original     		PDF S-AV10L S-AV10H S-AV10H "RF Power Amplifier" "RF Power" 5-53P S-AV10

    800w power amplifier circuit diagram

    Abstract: 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 1000w power amplifier circuit diagram 1000 watts amplifier schematic diagram with part 1200w power amplifier amplifier circuit diagram 1000 watt 300w mosfet power amplifier circuit diagram 1200w amplifier "Good RF Construction Practices and Techniques"
    Text: APPLICATION NOTE APT9502 By Kenneth W. Dierberger APT9502 LOW COST 1000 WATT, 300 VOLT RF POWER AMPLIFIER FOR 13.56 MHz Presented at RF EXPO EAST 1995 Page 1 Low Cost 1000 Watt, 300 Volt RF Power Amplifier for 13.56MHz Kenneth Dierberger Applications Engineering Manager


    Original     		PDF APT9502 56MHz 1000Watt, 56MHz 300VDC U-134, APT9303. 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 1000w power amplifier circuit diagram 1000 watts amplifier schematic diagram with part 1200w power amplifier amplifier circuit diagram 1000 watt 300w mosfet power amplifier circuit diagram 1200w amplifier "Good RF Construction Practices and Techniques"

    4041 transistor

    Abstract: teledyne transistor
    Text: Thin-Film Cascadable Amplifier Module 20 to 200 MHz Technical Data UTO/UTC 222 Series Features Description Pin Configuration • Frequency Range: 20 to 200 MHz The 222 Series is a thin-film, high gain, low-noise, RF cascade amplifier suitable for a variety of


    Original     		PDF

    utc 1018

    Abstract: No abstract text available
    Text: Thin-Film Cascadable Amplifier Module 10 to 200 MHz Technical Data UTO/UTC 211 Series Features Description Pin Configuration • Frequency Range: 10 to 200 MHz The 211 Series is a thin-film bipolar, medium-gain, low-noise, RF amplifier suitable for front end


    Original     		PDF PP-38 utc 1018

    7 v 4212 db

    Abstract: No abstract text available
    Text: Thin-Film Cascadable Amplifier Module 10 to 200 MHz Technical Data UTO/UTC 211 Series Features Description Pin Configuration • Frequency Range: 10 to 200 MHz The 211 Series is a thin-film bipolar, medium-gain, low-noise, RF amplifier suitable for front end


    Original     		PDF PP-38 7 v 4212 db

    MBDQ01

    Abstract: No abstract text available
    Text: polyfet rf devices MBDQ01 Power RF Amplifiers Power = 30.0 Watts Bandwidth = 30 to 470 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MBDQ01 is a 30 Watt, single stage amplifier module covering a bandwidth of 30-470 Mhz. This compact module design is


    Original     		PDF MBDQ01 MBDQ01 MADQ01 30MHz 28Vdc 470MHz

    MSMV01

    Abstract: module
    Text: polyfet rf devices MSMV01 RF Power Module Power = 100.0 Watts Bandwidth = 225 to 1000 Mhz Gain = 16.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MSMV01 is a 100 Watt, single stage amplifier module covering a bandwidth of 225-1000 Mhz. This compact module design


    Original     		PDF MSMV01 MSMV01 12nditions module

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices PCM002 Power RF Amplifiers Power = 30.0 Watts Bandwidth = 30 to 470 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The PCM002 is a 30 Watt, single stage amplifier module covering a bandwidth of 30-470 Mhz. This compact module design is


    Original     		PDF PCM002 PCM002 PCM001 215MHz 28Vdc 470MHz

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices MBDQ01 Power RF Amplifiers Power = 30.0 Watts Bandwidth = 30 to 470 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MBDQ01 is a 30 Watt, single stage amplifier module covering a bandwidth of 30-470 Mhz. This compact module design is


    Original     		PDF MBDQ01 MBDQ01 MADQ01 28Vdc

    MLCQ02

    Abstract: module
    Text: polyfet rf devices MLCQ02 Power RF Amplifiers Power = 40.0 Watts Bandwidth = 20 to 512 Mhz Gain = 37.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MLCQ02 is a 40 Watt, high gain amplifier module covering a bandwidth of 20-512 Mhz. This compact module design is


    Original     		PDF MLCQ02 MLCQ02 module

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices MBDQ01 Power RF Amplifiers Power = 30.0 Watts Bandwidth = 30 to 470 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MBDQ01 is a 30 Watt, single stage amplifier module covering a bandwidth of 30-470 Mhz. This compact module design is


    Original     		PDF MBDQ01 MBDQ01 MADQ01 28Vdc

    Untitled

    Abstract: No abstract text available
    Text: P250-1215 250 Watt RF POWER MODULE 960 to 1215 MHZ DESCRIPTION: The ASI P250-1215 is a 250 Watt 960-1215 MHz Pallet Amplifier Features: • 250 Watt Pulse Width 20uS, Duty cycle 5% RF Output Power (16 Watts Input Power)  LDMOS Technology  36V operation


    Original     		PDF P250-1215 P250-1215 1215MHz

    MSCQ01

    Abstract: module rf amplifier 100w rf power amplifier 100w AMPLIFIER 2 MHZ 100W 150M 100W POWER AMPLIFIER RF power amplifier MHz
    Text: polyfet rf devices MSCQ01 Power RF Amplifiers Power = 100.0 Watts Bandwidth = 30 to 512 Mhz Gain = 8.0 dB Vdd = 26.0 Volts 50 ohms Input/Output Impedance Description The MSCQ01 is a 100 Watt, single stage amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is


    Original     		PDF MSCQ01 MSCQ01 00YFET 24Vdc, 100KHz 24Vdc 30-512MHz, module rf amplifier 100w rf power amplifier 100w AMPLIFIER 2 MHZ 100W 150M 100W POWER AMPLIFIER RF power amplifier MHz

    MHCV01

    Abstract: module
    Text: polyfet rf devices MHCV01 Power RF Amplifiers Power = 10.0 Watts Bandwidth = 20 to 1000 Mhz Gain = 30.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MHCV01 is a 10 Watt, high gain amplifier module covering a bandwidth of 20-1000 Mhz. This compact module design is


    Original     		PDF MHCV01 MHCV01 module

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices PCM002 Power RF Amplifiers Power = 30.0 Watts Bandwidth = 30 to 470 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The PCM002 is a 30 Watt, single stage amplifier module covering a bandwidth of 30-470 Mhz. This compact module design is


    Original     		PDF PCM002 PCM002 PCM001 215MHz 28Vdc 470MH

    MSCQ02

    Abstract: module
    Text: polyfet rf devices MSCQ02 RF Power Module Power = 150.0 Watts Bandwidth = 30 to 512 Mhz Gain = 17.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MSCQ02 is a 150 Watt, single stage amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is


    Original     		PDF MSCQ02 MSCQ02 module

    Untitled

    Abstract: No abstract text available
    Text: P100-1215 100 Watt RF POWER MODULE 960 to 1215 MHZ DESCRIPTION: The ASI P100-1215 is a 100 Watt 960-1215 MHz pallet Amplifier Features: • 100 Watt Pulse Width 20uS, Duty cycle 5% RF Output Power (10 Watts Input Power)  LDMOS Technology  24-36V operation


    Original     		PDF P100-1215 P100-1215 4-36V 1215MHz 117mm)

    Untitled

    Abstract: No abstract text available
    Text: P1000-1215 1000 Watt RF POWER MODULE 960 to 1215 MHZ DESCRIPTION: The ASI P1000-1215 is a 1000 Watt 960-1215 MHz pallet Amplifier Features: • 1 kWatt Pulse Width 20uS, Duty cycle 5% RF Output Power (32 Watts Input Power)  LDMOS Technology  48V operation


    Original     		PDF P1000-1215 P1000-1215 1215MHz 117mm) 500Watts

    MBDQ01

    Abstract: module
    Text: polyfet rf devices MBDQ01 Power RF Amplifiers Power = 30.0 Watts Bandwidth = 30 to 470 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MBDQ01 is a 30 Watt, single stage amplifier module covering a bandwidth of 30-470 Mhz. This compact module design is


    Original     		PDF MBDQ01 MBDQ01 MADQ01 28Vdc module

    MLCQ03

    Abstract: module
    Text: polyfet rf devices MLCQ03 Power RF Amplifiers Power = 60.0 Watts Bandwidth = 20 to 512 Mhz Gain = 37.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MLCQ03 is a 60 Watt, high gain amplifier module covering a bandwidth of 20-512 Mhz. This compact module design is


    Original     		PDF MLCQ03 MLCQ03 module

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices MBDQ02 Power RF Amplifiers Power = 40.0 Watts Bandwidth = 20 to 512 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MBDQ02 is a 40 Watt, single stage amplifier module covering a bandwidth of 20-512 Mhz. This compact module design is


    Original     		PDF MBDQ02 MBDQ02 MADQ02

    rf amplifier 100w

    Abstract: No abstract text available
    Text: polyfet rf devices MKAL01 Power RF Amplifiers Power = 100.0 Watts Bandwidth = 2 to 100 Mhz Gain = 50.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MKAL01 is a 100 Watt, high gain amplifier module covering a bandwidth of 2-100 Mhz. This compact module design is


    Original     		PDF MKAL01 MKAL01 MKAL01: 100kHz rf amplifier 100w