MT29F128G08AJAAAWP-IT
Abstract: MT29F128G08AJAAAWP MT29F32G08ABCABH1-10IT MT29F32G08ABCABH1 MT29F32G08AB MT29F128G08AJAAA M73A 256gb nand flash mt29f128g08 MT29F128G08A
Text: MT29F32G08ABCABH1-10IT - Micron Technology, Inc. Page 1 Micron Global Investor Relations News & Events Jobs Contact Micron Login PRODUCTS & SUPPORT ABOUT MICRON How To Buy Sign up for Access Enter Search Term or Part Number MY WORKSPACE MT29F32G08ABCABH1-10IT
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MT29F32G08ABCABH1-10IT
MT29F32G08ABCABH1-10IT
100-ball
32/64/128/256Gb
Down09/2010
flash/mass-storage/mt29f32g08abcabh1-10it
MT29F128G08AJAAAWP-IT
MT29F128G08AJAAAWP
MT29F32G08ABCABH1
MT29F32G08AB
MT29F128G08AJAAA
M73A
256gb nand flash
mt29f128g08
MT29F128G08A
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AMI350XXPR
Abstract: ODCHXX16 MAP 3959 crystal oscillator 4049
Text: 0.35 Micron CMOS Pad Library Datasheets AMI350XXPR 3.3/5.0 Volt Section 4 PAD LIBRARY Revision 1.1 PAD LIBRARY SELECTIO DATASHEETS Pad Logic AMI350XXPR 0.35 micron CMOS Pad Library 4-3 AMI350XXPR 0.35 micron CMOS Pad Library Pad Logic PAD SELECTION GUIDE
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AMI350XXPR
ODCHXX16
MAP 3959
crystal oscillator 4049
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PC/104
Abstract: No abstract text available
Text: MICRON MICRON MICRON MICRON Low power 200MHz PR266 or 250MHz (PR366) CPU options Up to 256MB SDRAM SST ATA-Disk Chip and CompactFlash support Integrated AGP (x2) Trident CyberBlade Graphics for LCD and CRT 10/100Base-T Ethernet Soundblaster compatible Audio (optional)
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200MHz
PR266)
250MHz
PR366)
256MB
10/100Base-T
PC/104
PC/104+
PC/104
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MT29F32G08AFACA
Abstract: MT29F32G08 MT29F32G0
Text: Specifications Data Sheets B~s/Cell: SLC Brand: Micron Bus Wi<hh: x8 Chill Em1ble: Single Component Density: 32Gb Depth: 2Gb Fall: Micron Family: NAND Flash Generation l>rimaly : First Generation 110 : Common 110 Channels: 1 lnte1face: Async Manufacturer: Micron
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48-pin
MT29F32G08AFACAVVP
MT29F32G08AFACAVI/PES
MT29F32G08AFACA
MT29F32G08
MT29F32G0
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MT29F32G08AFACAWP-IT
Abstract: MT29F32G08AFACAWP-ITES MT29F32G08AFA MT29F32G08 MT29F32G08AFACAWP
Text: Specifications Data Sheets B~s/Cell: SLC Brand: Micron Bus Wi<hh: x8 Chill Em1ble: Single Component Density: 32Gb Depth: 2Gb Fall: Micron Family: NAND Flash Generation l>rimaly : First Generation 110 : Common 110 Channels: 1 lnte1face: Async Manufacturer: Micron
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48-pin
MT29F32G08AFACAWP-ItC
MT29F32G08AFACAWP-ITES
MT29F32G08AFACAWP-IT
MT29F32G08AFA
MT29F32G08
MT29F32G08AFACAWP
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XH018
Abstract: No abstract text available
Text: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron
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XH018
XH018
18-micron
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MT29F128G08AJAAAWP-ITES
Abstract: MT29F128G08AJAAAWP-IT MT29F128G08AJAAAWP-I MT29F128G08AJAAA MT29F128G08AJAAAWP MT29F128 mt29f128g08 MT29F128G
Text: Specifications Data Sheets B~s/Cell: ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q SLC Brand: Micron Bus Wi<hh: xa Chill Em1ble: Single Component Density: 128Gb Depth: 16Gb Fall: Micron Family: NAND Flash 110 : Common Mmmfacturer: Micron Mode Operation: Single Die
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128Gb
48-pin
Exterm11:
3216411281256Gb
MT29F128G08AJAAAWP-I
MT29F128G08AJAAAWP-ITES
MT29F128G08AJAAAWP-IT
MT29F128G08AJAAA
MT29F128G08AJAAAWP
MT29F128
mt29f128g08
MT29F128G
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fan 7320
Abstract: atmel 936 ttl buffer MG2014P MG2044P MG2142P MG2270P TM1019 radiation hard PLL OAI22 capacitance
Text: MG2RTP Radiation Hardened 0.5 Micron Sea of Gates Introduction The MG2RTP series is a 0.5 micron, array based, CMOS product family. Several arrays up to 490k cells cover all system integration needs. The MG2RTP is manufactured using SCMOS3/2RTP, a 0.5 micron drawn, 3 metal
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OAI22
fan 7320
atmel 936
ttl buffer
MG2014P
MG2044P
MG2142P
MG2270P
TM1019
radiation hard PLL
OAI22 capacitance
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micron sram
Abstract: No abstract text available
Text: PRESS RELEASE CYPRESS INTRODUCES ITS FIRST 0.35-MICRON SRAM Announces Working Silicon on 0.25-Micron Products SAN JOSE, Calif., November 18, 1997 - Cypress Semiconductor today introduced its first SRAM built in a 0.35-micron feature size. The introduction comes on the heels of Cypress’s first
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35-MICRON
25-Micron
CY7C1021,
35-micron
ahe10
micron sram
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14020
Abstract: MG2000 MG2001 MG2002 MG2004 MG2010 MG2044 MG2055
Text: MG2 0.5 Micron Sea of Gates Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS process.
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BOUT12
14020
MG2000
MG2001
MG2002
MG2004
MG2010
MG2044
MG2055
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rpp1k1
Abstract: No abstract text available
Text: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate
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XT018
XT018
18-micron
rpp1k1
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36168
Abstract: No abstract text available
Text: MG2 MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS
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Bout12,
BOUT12
36168
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MG2000
Abstract: MG2001 MG2002 MG2004 MG2010 MG2044 MG2055 MATRA MHS, MG2
Text: MG2 MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS 3/2, a 0.5 micron drawn, 3 metal layers
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BOUT12
MG2000
MG2001
MG2002
MG2004
MG2010
MG2044
MG2055
MATRA MHS, MG2
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Untitled
Abstract: No abstract text available
Text: MICRON' I 4 MEG x 16 E D O D R A lV l TECHNOLOGY, INC. n P A M MT4LC4M16R6 MT4LC4M16N3 U r iM IV I For the latest data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/datasheet. html FEATURES PIN ASSIGNMENT Top View • Single +3.3V +0.3V power supply
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MT4LC4M16R6
MT4LC4M16N3
096-cycle
50-PlVl
50-PIN
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nd02d2
Abstract: No abstract text available
Text: V L S I Technology, in c . PRELIMINARY VGC450/VGC453 LIBRARY 0.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS Design Automation's ASIC Design
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VGC450/VGC453
VGC450/453
nd02d2
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dram 88 pin
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 55E D MICRON I • blllS4T 0DGSDb3 3T0 ■ MRN MT12D88C25636 256K x 36, 512K x 18 IC DRAM CARD - " T
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MT12D88C25636
88-Pin
dram 88 pin
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Untitled
Abstract: No abstract text available
Text: CD74LCX16646 Semiconductor Fast CMOS 3.3V 16-Bit Registered Transceiver December 1997 Description Features Advanced 0.6 micron CMOS Technology Harris Sem iconductor’s CD74LCX16646 is produced in an advanced 0.6 micron CMOS technology, achieving industry
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CD74LCX16646
16-Bit
CD74LCX16646
MO-118-AB,
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON I 16’ 32 M E Gx32 SDRAM DIMMs TECHNOLOGY, INC. MT8LSDT1632U, MT8LSDT3232U SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View
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MT8LSDT1632U,
MT8LSDT3232U
100-pin,
128MB
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Untitled
Abstract: No abstract text available
Text: CD74LCX16952 Semiconductor Fast CMOS 3.3V 16-Bit Registered Transceiver January 1998 Description Features • Advanced 0.6 micron CMOS Technology Harris’ CD74LCX16952 is produced in an advanced 0.6 micron CMOS technology, achieving industry leading speed
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CD74LCX16952
16-Bit
CD74LCX16952
MO-118-AB,
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Untitled
Abstract: No abstract text available
Text: ADVANCE 16 MEG X 32 SDRAM DIMM MICRON' I TECHNOLOGY, INC. M T 4L S D T 1632U D SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View
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100-pin,
096-cycle
1632U
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4LC4M
Abstract: No abstract text available
Text: 4’8 M EGx32 DRAM DIMMs MICRON I TECHNOLOGY, INC. D P A |\/| MT2LDT432U X , MT4LDT832U (X) _ _ _ I WI f j | j I I I I •I For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES
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MT2LDT432U
MT4LDT832U
100-pin,
096-cycle
100-Pin
4LC4M
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Untitled
Abstract: No abstract text available
Text: MICRON 4M E Gx4 . FPM DRAM DRAM MT4LC4M4B1, MT4LC4M4A1 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html
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Untitled
Abstract: No abstract text available
Text: M AR » CD74LCX16952 Fast CMOS 3.3V 16-Bit Registered Transceiver January 1998 Description Features Advanced 0.6 micron CMOS Technology Harris’ CD74LCX16952 is produced in an advanced 0.6 micron CMOS technology, achieving industry leading speed grades.
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CD74LCX16952
16-Bit
CD74LCX16952
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: m CD74L CX16952 a r r is Fast CMOS 3.3V 16-Bit Registered Transceiver January 1998 Features Description • Advanced 0.6 micron CMOS Technology Harris’ CD74LCX16952 is produced in an advanced 0.6 micron CMOS technology, achieving industry leading speed grades.
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CD74L
CX16952
16-Bit
CD74LCX16952
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