9C0000
Abstract: No abstract text available
Text: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code
|
Original
|
128Mb:
115ns
135ns
128KB
09005aef8447d46d/Source:
09005aef845b5c96
9C0000
|
PDF
|
9C0000
Abstract: No abstract text available
Text: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code
|
Original
|
128Mb:
115ns
135ns
128KB
09005aef8447d46d/Source:
09005aef845b5c96
9C0000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code
|
Original
|
128Mb:
115ns
135ns
128KB
blocks-0006,
09005aef8447d46d/Source:
09005aef845b5c96
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa
|
Original
|
100ns/110ns
100ns
MT28F322D18FH
|
PDF
|
FY536
Abstract: FW537
Text: ADVANCE‡ 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa
|
Original
|
100ns/110ns
100ns
MT28F322D18FH
FY536
FW537
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa
|
Original
|
MT28F322D18FH
58-Ball
100ns/110ns
Burs625
MT28F322D18FH
|
PDF
|
FY550
Abstract: 44A4h
Text: 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D20 MT28F322D18 Low Voltage, Extended Temperature 0.22µm Process Technology FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture – Support for true concurrent operation with zero
|
Original
|
MT28F322D20
MT28F322D18
MT28F322D18
110ns/30
MT28F322D18FH
FY550
44A4h
|
PDF
|
FY541
Abstract: micron flash controller MT28F322D15FH-104BET
Text: ADVANCE‡ 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D15FH Super Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice
|
Original
|
MT28F322D15FH
58-Ball
100ns
MT28F322D15FH
FY541
micron flash controller
MT28F322D15FH-104BET
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa
|
Original
|
MT28F322D18FH
100ns/110ns
MT28F322D18FH
|
PDF
|
FY520
Abstract: FW533 MT28F322D18
Text: ADVANCE 2 MEG x 16 BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa
|
Original
|
MT28F322D18FH
100ns
MT28F322D18FH
FY520
FW533
MT28F322D18
|
PDF
|
pic 8259
Abstract: sus_stat_n rtc backup battery circuit 2h48
Text: PRELIMINARY‡ MT8LLN22NCNE COPPERTAIL 21PAD/22NCN Chipset Overview MT8LLN22NCNE Peripheral Bus Controller For the latest data sheet please refer to the Micron Web site: www.micron.com/chipset. GENERAL DESCRIPTION The Micron 21PAD/22NCN chipset consists of two
|
Original
|
MT8LLN22NCNE
21PAD/22NCN
21PAD
22NCN
512KB
64-bit,
pic 8259
sus_stat_n
rtc backup battery circuit
2h48
|
PDF
|
48-pin TSOP package tray micron
Abstract: No abstract text available
Text: M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Features • RoHS-compliant packages – TSOP48 – SO44 16Mb not available for this package • Automotive device grade 3
|
Original
|
M29FxxxFT/B
M29F200FT/B,
M29F400FT/B,
M29F800FT/B,
M29F160FT/B
TSOP48
AEC-Q100)
09005aef845656da
m29fxxxf/t
2mb-16mb
48-pin TSOP package tray micron
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE 2 MEG x 16 BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa
|
Original
|
MT28F322D18FH
100ns
MT28F322D18FH
|
PDF
|
M58BW16FB
Abstract: M58BW32FT M58BW32FB V/B/512
Text: M58BW16F, M58BW32F Features M58BW16F, M58BW32F 16Mb or 32Mb x32, Boot Block, Burst 3.3V Supply Flash Memory Features • Security – 64-bit unique device identifier (UID) • Fast programming – Write to buffer and program capability (8 double words) • Optimized for FDI drivers
|
Original
|
M58BW16F,
M58BW32F
M58BW32F
M58BW16F
09005aef8457ee46
16-32f
M58BW16FB
M58BW32FT
M58BW32FB
V/B/512
|
PDF
|
|
|
MT28F128J3
Abstract: MT28F320J3 MT28F640J3 64-BALL
Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3, MT28F640J3, MT28F320J3 Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I Memory Organization • x8/x16 • One hundred twenty-eight 128KB erase blocks 128Mb • Sixty-four 128KB erase blocks (64Mb) • Thirty-two 128KB erase blocks (32Mb)
|
Original
|
128Mb,
MT28F128J3,
MT28F640J3,
MT28F320J3
56-Pin
x8/x16
128KB
128Mb)
MT28F128J3
MT28F320J3
MT28F640J3
64-BALL
|
PDF
|
MT28F322D18
Abstract: MT28F322D20 FX546
Text: 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D20 MT28F322D18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture – Support for true concurrent operation with zero
|
Original
|
MT28F322D20
MT28F322D18
58-Ball
MT28F322D18
MT28F322D20
MT28F322D20FH
FX546
|
PDF
|
fw209
Abstract: No abstract text available
Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3 Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)
|
Original
|
128Mb,
x8/x16
128KB
128Mb)
150ns/25ns
120ns/25ns
110ns/25ns
fw209
|
PDF
|
Micron Q-Flash memory
Abstract: FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11
Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3‡ Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)
|
Original
|
128Mb,
MT28F128J3,
MT28F640J3,
MT28F320J3
56-Pin
x8/x16
128KB
128Mb)
Micron Q-Flash memory
FW501
Micron data sheet Q-Flash
sample code read and write flash memory
FW201
FW207
MT28F128J3
MT28F128J3FS-15
MT28F320J3
MT28F320J3FS-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Q-FLASHTM MEMORY MT28F128J3, MT28F640J3, MT28F320J3 FEATURES PIN /BALL ASSIGNMENT Top View • x8/x16 organization • One hundred twenty-eight 128KB erase blocks (128Mb) Sixty-four 128KB erase blocks (64Mb)
|
Original
|
128Mb,
x8/x16
128KB
128Mb)
150ns/25ns
120ns/25ns
100ns/25ns
|
PDF
|
M29F800FT
Abstract: m29f800f M29F400FT M29F160F M29F200FT M29F160FT M29F800 M29F400F M29F200F M29F400FB
Text: M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Features • RoHS-compliant packages – TSOP48 – SO44 16Mb not available for this package • Automotive device grade 3
|
Original
|
M29FxxxFT/B
M29F200FT/B,
M29F400FT/B,
M29F800FT/B,
M29F160FT/B
0x01h
M29F200FT:
0x2251
M29F400FT:
0x2223
M29F800FT
m29f800f
M29F400FT
M29F160F
M29F200FT
M29F160FT
M29F800
M29F400F
M29F200F
M29F400FB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Q-FLASHTM MEMORY MT28F128J3, MT28F640J3, MT28F320J3 FEATURES PIN /BALL ASSIGNMENT Top View • x8/x16 organization • One hundred twenty-eight 128KB erase blocks (128Mb) Sixty-four 128KB erase blocks (64Mb)
|
Original
|
128Mb,
x8/x16
128KB
128Mb)
150ns/25ns
120ns/25ns
100ns/25ns
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Q-FLASHTM MEMORY MT28F128J3, MT28F640J3, MT28F320J3 FEATURES PIN /BALL ASSIGNMENT Top View • x8/x16 organization • One hundred twenty-eight 128KB erase blocks (128Mb) Sixty-four 128KB erase blocks (64Mb)
|
Original
|
128Mb,
MT28F128J3,
MT28F640J3,
MT28F320J3
x8/x16
128KB
128Mb)
150ns/25ns
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 64Mb, 32Mb SIRUSFLASH MEMORY SIRUSFLASHTM MEMORY MT28F640J3, MT28F320J3 FEATURES PIN ASSIGNMENT Top View • x8/x16 organization • Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb) • VCC, VCCQ, and VPEN voltages:
|
Original
|
x8/x16
128KB
120ns/25ns
100ns/25ns
MT28F640J3
|
PDF
|
micron flash controller
Abstract: 03BCD Micron Q-Flash memory
Text: PRELIMINARY‡ 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Q-FLASHTM MEMORY MT28F128J3, MT28F640J3, MT28F320J3 FEATURES PIN /BALL ASSIGNMENT Top View • x8/x16 organization • One hundred twenty-eight 128KB erase blocks (128Mb) Sixty-four 128KB erase blocks (64Mb)
|
Original
|
128Mb,
MT28F128J3,
MT28F640J3,
MT28F320J3
x8/x16
128KB
128Mb)
150ns/25ns
micron flash controller
03BCD
Micron Q-Flash memory
|
PDF
|
