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    Micron Technology

    Abstract: No abstract text available
    Text: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and


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    20Note/DRAM/TN4102 TN-41-04: TN-41-13: TN-46-02: TN-46-06: TN-46-11: TN-46-14: TN-47-19: TN-47-20: Micron Technology PDF

    MT29C1G24MADLAJA-6

    Abstract: Micron 512MB nand FLASH MT29C2G24MAKLAJA-6 Micron 512MB nand FLASH mcp Flash MCp nand DRAM 137-ball JW190 137-Ball MCP NAND sDR mt29c 1g nand DDR mcp
    Text: Preliminary‡ Micron Confidential and Proprietary 137-Ball NAND Flash with LP-DRAM MCP Features NAND Flash with LP-DRAM 137-Ball Multiple-Chip Package MCP MT29CxGxxMAxxxJA Current Production Part Numbers: Table 1 on page 2 Features Figure 1: • All-Micron NAND Flash and LP-DRAM


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    137-Ball MT29CxGxxMAxxxJA 09005aef82ff4431 09005aef82ff448c 137ball MT29C1G24MADLAJA-6 Micron 512MB nand FLASH MT29C2G24MAKLAJA-6 Micron 512MB nand FLASH mcp Flash MCp nand DRAM 137-ball JW190 MCP NAND sDR mt29c 1g nand DDR mcp PDF

    Untitled

    Abstract: No abstract text available
    Text: 512Mb, 1Gb, 2Gb: P30-65nm Features Micron Parallel NOR Flash Embedded Memory P30-65nm JS28F512P30BFx, JS28F512P30EFx, JS28F512P30TFx, PC28F512P30BFx, PC28F512P30EFx, PC28F512P30TFx JS28F00AP30BFx, JS28F00AP30TFx, JS28F00AP30EFx, PC28F00AP30BFx, PC28F00AP30TFx, PC28F00AP30EFx,


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    512Mb, P30-65nm P30-65nm) JS28F512P30BFx, JS28F512P30EFx, JS28F512P30TFx, PC28F512P30BFx, PC28F512P30EFx, PC28F512P30TFx JS28F00AP30BFx, PDF

    MT29C4G48MAZAPAKQ-5

    Abstract: MT29C4G96MAZAPCJG-5 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,


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    168-Ball MT29C4G48MAYAPAKQ-5 MT29C4G48MAZAPAKQ-5 MT29C4G48MAZAPAKQ-6 MT29C4G96MAZAPCJG-5 MT29C4G96MAZAPCJG-6 MT29C8G96MAZAPDJV-5 MT29C8G96MAZAPDJV-6 09005aef83ba4387 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package PDF

    MT29C2G24MAKLAJG-75 IT

    Abstract: MT29C2G24MAKLAjg JW256
    Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components


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    168-Ball MT29CxGxxMAxxxxx 09005aef83070ff3 168ball MT29C2G24MAKLAJG-75 IT MT29C2G24MAKLAjg JW256 PDF

    MT29F4G08ABA

    Abstract: MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96
    Text: Preliminary‡ Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,


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    168-Ball MT29C4G48MAYAPAKQ-5 MT29C4G48MAZAPAKQ-5 MT29C4G48MAZAPAKQ-6 MT29C4G96MAZAPCJG-5 MT29C4G96MAZAPCJG-6 MT29C8G96MAZAPDJV-5 MT29C8G96MAZAPDJV-6 09005aef83ba4387 MT29F4G08ABA MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96 PDF

    MICRON mcp

    Abstract: PC28F256P30B P30-65nm PC28F256P PC28F256P30BFF PF48F4400P0VBQEF PC28F256P30BFE JS28F256P30BF Micron 512MB NOR FLASH PF48F
    Text: 256Mb and 512Mb 256Mb/256Mb , P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features • Security – One-Time Programmable Register: 64 OTP bits,


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    256Mb 512Mb 256Mb/256Mb) P30-65nm P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, MICRON mcp PC28F256P30B PC28F256P PC28F256P30BFF PF48F4400P0VBQEF PC28F256P30BFE JS28F256P30BF Micron 512MB NOR FLASH PF48F PDF

    MICRON mcp

    Abstract: microchannel plate MCP Electronics MCP3301
    Text: MCP MCP MCP MCP MCP MCP MCP MCP MCP MCP MCP MCP MCP MCP MCP MCP MCP MCP MCP MCP MCP MCP MCP MCP MCP MCP MCP P MCP3301 Matched Microchannel Plate Set Standard Resistance Microchannel Plate for Detectors Maximize Your Instrument’s Performance With Our Optimum Five Micron Pore


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    MCP3301 MCP3301 10-micron 02-S-0323 519B-0203 MICRON mcp microchannel plate MCP Electronics PDF

    RC48F4400P0VB0E

    Abstract: PC28F256P30BFF MICRON mcp pf48f4400p0vbqe rc28F256P30TFE
    Text: 256Mb and 512Mb 256Mb/256Mb , P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features • Security – One-Time Programmable Register: 64 OTP bits,


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    256Mb 512Mb 256Mb/256Mb) P30-65nm P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, RC48F4400P0VB0E PC28F256P30BFF MICRON mcp pf48f4400p0vbqe rc28F256P30TFE PDF

    MT29C1G12

    Abstract: mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1
    Text: Preliminary‡ 152-Ball NAND Flash and LP-DRAM PoP TI OMAP MCP Features NAND Flash and LP-DRAM 152-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package


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    152-Ball 409ng 09005aef8326e5ac 09005aef8326e59a 152ball_ MT29C1G12 mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1 PDF

    MT29C2G24m

    Abstract: MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD
    Text: Preliminary‡ 168-Ball NAND Flash and LP-DRAM PoP TI-OMAP MCP Features NAND Flash and LP-DRAM 168-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package


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    168-Ball 09005aef83071038/PDF: 09005aef83070ff3 168ball MT29C2G24m MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD PDF

    MTFC4G

    Abstract: MTFC16G micron emmc MTFC32G micron eMMC 100 ball BGA MTfc8g emmc csd MTFC4 micron emmc 4.4 MTFC16GKQDI
    Text: 4GB, 8GB, 16GB, 32GB: e•MMC Features e·MMC Memory MTFC4GGQDM, MTFC4GGQDI, MTFC8GKQDI, MTFC16GKQDI, MTFC32GKQDH Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash • 153-ball FBGA or 169-ball FBGA (6/6 RoHS-compliant)


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    MTFC16GKQDI, MTFC32GKQDH 153-ball 169-ball 41-compliant 84-A441) 09005aef838eabba j534q567r MTFC4G MTFC16G micron emmc MTFC32G micron eMMC 100 ball BGA MTfc8g emmc csd MTFC4 micron emmc 4.4 MTFC16GKQDI PDF

    OV5647

    Abstract: image sensor omnivision response ov5647 omnivision
    Text: OV5647 5-megapixel product brief lead f ree available in a lead-free package 5-megapixel 1/ 4" Image Sensor with 1.4 µm OmniBSI Technology Offering HD Video The OV5647 is OmniVision's first 5-megapixel CMOS image sensor built on proprietary 1.4-micron OmniBSI backside


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    OV5647 OV5647 1080p image sensor omnivision response ov5647 omnivision PDF

    omnivision global shutter

    Abstract: OV5647 ov5647 omnivision OmniVision CMOS Camera Module global cmos SENSOR "global shutter" HD cmos IMAGE SENSOR global shutter HD MIPI ov5647 omnivision omnivision global shutter high frame rate OmniVision CMOS Camera Module
    Text: OV5647 5-megapixel product brief lead free available in a lead-free package 5-megapixel 1/4" Image Sensor with 1.4 µm OmniBSI Technology Offering HD Video The OV5647 is OmniVision's first 5-megapixel CMOS image sensor built on proprietary 1.4-micron OmniBSI backside


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    OV5647 OV5647 720p/60 1080p omnivision global shutter ov5647 omnivision OmniVision CMOS Camera Module global cmos SENSOR "global shutter" HD cmos IMAGE SENSOR global shutter HD MIPI ov5647 omnivision omnivision global shutter high frame rate OmniVision CMOS Camera Module PDF

    Micron LPDDR2

    Abstract: No abstract text available
    Text: Micron Confidential and Proprietary Advance‡ 512Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 Banks MT46H16M32LF – 4 Meg x 32 x 4 Banks MT46H16M32LG – 4 Meg x 32 x 4 Banks Features Options • VDD/VDDQ


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    512Mb: MT46H32M16LF MT46H16M32LF MT46H16M32LG 09005aef83dd2b3e Micron LPDDR2 PDF

    Schematic

    Abstract: DLP-HS-FPGA3 HSFPGA3 XC3S1400AFT256
    Text: D LP -H S -FP G A 3 LEAD FREE U S B - FP G A M O D U LE FEATURES: • • • • • • • • • Xilinx XC3S1400A-4FTG256C FPGA Utilized on the DLP-HS-FPGA3 Micron 32M x 8 DDR2 SDRAM Memory Built-In Configuration Loader; Writes the Bit File Directly to SPI Flash via High-Speed USB 2.0


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    XC3S1400A-4FTG256C 50-Pin, Schematic DLP-HS-FPGA3 HSFPGA3 XC3S1400AFT256 PDF

    MH8S64AQFC -7

    Abstract: M5M51008CFP-70HI sop-32 pin Shipping Trays S1912 M5M5V108DFP-70HI jeida dram 88 pin M5M465165 MH8S64AQFC-6 MH8S64DBKG-6 PC-100
    Text: Please Read Notes First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents New Publications MCP Multi Chip Package Standard Discrete DRAM PC Cards Standard DRAM Modules IC Package SRAM Flash Memory Quality Assurance and Reliability Testing


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    PDF

    wfbga

    Abstract: 1GB-x16 152-Ball PoP MT46H64M16LF
    Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks MT46H32M32LG – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks


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    MT46H64M16LF MT46H32M32LF MT46H32M32LG 09005aef83d9bee4 wfbga 1GB-x16 152-Ball PoP MT46H64M16LF PDF

    MT46H64M32

    Abstract: MT46H128M16LF cx 2601 MT46H64M32LF
    Text: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4


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    MT46H128M16LF MT46H64M32LF MT46H128M32L2 MT46H256M32L4 MT46H256M32R4 09005aef8457b3eb MT46H64M32 MT46H128M16LF cx 2601 MT46H64M32LF PDF

    smd marking code T2N

    Abstract: ELPIDA lpddr 1GB-x16 152-Ball PoP MT46H64M16LF
    Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks MT46H32M32LG – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks


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    MT46H64M16LF MT46H32M32LF MT46H32M32LG 09005aef83d9bee4 smd marking code T2N ELPIDA lpddr 1GB-x16 152-Ball PoP MT46H64M16LF PDF

    LPDDR2 SDRAM micron

    Abstract: 1GB-x16 ELPIDA lpddr smd marking code T2N LPDDR2 SDRAM elpida LPDDR2 SDRAM samsung Dual LPDDR2 micron lpddr2 samsung lpddr samsung* lpddr2* pop package
    Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks MT46H32M32LG – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4


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    MT46H64M16LF MT46H32M32LF MT46H32M32LG 09005aef83d9bee4 LPDDR2 SDRAM micron 1GB-x16 ELPIDA lpddr smd marking code T2N LPDDR2 SDRAM elpida LPDDR2 SDRAM samsung Dual LPDDR2 micron lpddr2 samsung lpddr samsung* lpddr2* pop package PDF

    MT46H32M16

    Abstract: No abstract text available
    Text: Preliminary‡ 512Mb: x16, x32 Automotive Mobile LPDDR SDRAM Features Automotive Mobile Low-Power DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks MT46H16M32LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V


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    512Mb: MT46H32M16LF MT46H16M32LF MT46H16M32LG 09005aef846e285e 512mb MT46H32M16 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 512Mb: x16, x32 Mobile LPDDR SDRAM Automotive Features Mobile Low-Power DDR SDRAM (Automotive) MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks MT46H16M32LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ


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    512Mb: MT46H32M16LF MT46H16M32LF MT46H16M32LG option32 09005aef846e285e 512mb PDF

    Untitled

    Abstract: No abstract text available
    Text: nllifriitr i~~*'TíiniimL—"-^ír niriaittT MICRON TECHNOLOGY INC 3fiE ]> • b l l l S M 6} DQQ5b44 1 « M R N PRELIMINARY TRIPLE PORT DRAM 256K X 4 DRAM WITH DUAL 512x4 SAMS • • • • • • • • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data access ports


    OCR Scan
    DQQ5b44 512x4 450mW 512-cycle T-46-23-37 PDF