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    MICRON POWER RESISTOR 220W Search Results

    MICRON POWER RESISTOR 220W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    MICRON POWER RESISTOR 220W Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ac 1501-50

    Abstract: MDS-70507 MY-60 MICRON POWER RESISTOR 220w
    Text: Micron Power Resistors Type Resistors With Aluminum Diecast Case MYP Large-Capacity Please refer to MDS-70507 for more detailed information. * MYC MYS 1 Part Numbering System 2 3 4 5 6 7 M Y C 2 2 N Generic name Resistor element External shape Standard 8 9


    Original     		MDS-70507 ac 1501-50 MY-60 MICRON POWER RESISTOR 220w PDF

    mrc 444

    Abstract: MICRON POWER RESISTOR MRC MDS-1212 MICRON POWER RESISTOR 220w MR22 35mm2
    Text: Micron Power Resistors MRP Large-Capacity Type Resistors With Aluminum Case Economy Type ✳ Please refer to MDS-1212 for more detailed information. MRC MRS Part Numbering System 1 2 3 4 5 6 7 M R C 0 8 N Generic name Resistor element External shape Standard


    Original     		MDS-1212 75mm2 mrc 444 MICRON POWER RESISTOR MRC MICRON POWER RESISTOR 220w MR22 35mm2 PDF

    equivalent of 662K

    Abstract: MICRON POWER RESISTOR MLS micron fuse resistors mps 0851 MICRON POWER RESISTOR 24W 662k MPR 55 F resistor ceramic MDS-1212 ML10L meg05n
    Text: Micron Power Resistors Part Numbering System M N S Type MP - Pin terminal MH - Lug terminal MN - Vertical lead terminal MNS 0 5 Rated power 02 - 2W 10 - 10W 15 - 15W Element G-wire -wound type ceramic core S-Wire -wound type. (glass fiber core) R-Metal Oxide Film


    Original     		PDF

    p 1703 bds

    Abstract: No abstract text available
    Text: PTFA082201E PTFA082201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are thermally-enhanced, 220-watt, internally-matched GOLDMOS FETs intended for CDMA and WCDMA applications. They are characaterized for two-carrier


    Original     		PTFA082201E PTFA082201F 220-watt, H-30260-2 H-31260-2 p 1703 bds PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched GOLDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Thermally-enhanced


    Original     		PTFA092201E PTFA092201F 220-watt, H-30260-2 H-31260-2 PDF

    100uf HFK

    Abstract: HFK CAPACITOR 100 HFK capacitor
    Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


    Original     		PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-33288-2 H-34288-2 100uf HFK HFK CAPACITOR 100 HFK capacitor PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power ampliier


    Original     		PTFA092213EL PTFA092213FL PTFA092213EL PTFA092213FL 220-watt, H-34288-4/2 PDF

    100 HFK

    Abstract: HFK CAPACITOR 100uf HFK 100 HFK capacitor ELNA capacitor 100 uf 50v diode c723 LM7805 05 330 hfk 8 LM7805 PTFA092211EL
    Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


    Original     		PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-33288-2 H-34288-2 100 HFK HFK CAPACITOR 100uf HFK 100 HFK capacitor ELNA capacitor 100 uf 50v diode c723 LM7805 05 330 hfk 8 LM7805 PDF

    transistor di 960

    Abstract: No abstract text available
    Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


    Original     		PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-34288-2 transistor di 960 PDF

    a2324

    Abstract: H-37260-2 elna 50v LM7805 05 BCP56 LM7805 PTFA092201E PTFA092201F RO4350
    Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced


    Original     		PTFA092201E PTFA092201F PTFA092201E PTFA092201F 220-watt, H-36260-2 H-37260-2 a2324 H-37260-2 elna 50v LM7805 05 BCP56 LM7805 RO4350 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in


    Original     		PTFA082201E PTFA082201F PTFA082201E PTFA082201F 220-watt PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced


    Original     		PTFA092201E PTFA092201F PTFA092201E PTFA092201F 220-watt, H-36260-2 H-37260-2 PDF

    elna 50v

    Abstract: BCP56 LM7805 PTFA092201E PTFA092201F RO4350
    Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced


    Original     		PTFA092201E PTFA092201F PTFA092201E PTFA092201F 220-watt, H-36260-2 H-37260-2 elna 50v BCP56 LM7805 RO4350 PDF

    CW 7805

    Abstract: PTFA092213EL H-34288-6 PTFA092213EL ESD BCP56 LM7805 R250 RO4350 H-33288-6 240-2520-2-ND
    Text: PTFA092213EL PTFA092213FL Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier applications in the 920 to 960 MHz band. These devices feature


    Original     		PTFA092213EL PTFA092213FL PTFA092213EL PTFA092213FL 220-watt, H-33288-6 H-34288-6 CW 7805 H-34288-6 PTFA092213EL ESD BCP56 LM7805 R250 RO4350 H-33288-6 240-2520-2-ND PDF

    LM7805

    Abstract: elna 50v BCP56 PTFA082201E PTFA082201F RO4350
    Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in


    Original     		PTFA082201E PTFA082201F PTFA082201E PTFA082201F 220-watt LM7805 elna 50v BCP56 RO4350 PDF

    PTFA082201E

    Abstract: RO4350 elna 50v elna capacitor BCP56 LM7805 PTFA082201F ceramic capacitor 39 pf A34 rf 35V ELNA Electrolytic capacitor
    Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in


    Original     		PTFA082201E PTFA082201F PTFA082201E PTFA082201F 220-watt RO4350 elna 50v elna capacitor BCP56 LM7805 ceramic capacitor 39 pf A34 rf 35V ELNA Electrolytic capacitor PDF

    PTFA092213EL

    Abstract: LM7805 resistor 51k transistor c331 BCP56 R250 RO4350
    Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier


    Original     		PTFA092213EL PTFA092213FL PTFA092213EL PTFA092213FL 220-watt, LM7805 resistor 51k transistor c331 BCP56 R250 RO4350 PDF

    Untitled

    Abstract: No abstract text available
    Text: PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output


    Original     		PXFC192207FH PXFC192207FH 220-watt PDF

    cwe3

    Abstract: No abstract text available
    Text: SM364TCSMB3UI15 February 1997 Rev 0 SMART Modular Technologies SM364TCSMB3UI15 256KByte 32Kx64 Synchronous Secondary Cache SRAM Module General Description Features The SM364TCSMB3UI15 is a high performance, 256 Kilobyte synchronous secondary cache SRAM module for


    Original     		SM364TCSMB3UI15 SM364TCSMB3UI15 256KByte 32Kx64) 160-pin, 32Kx32 cwe3 PDF

    10k resistor network SIP

    Abstract: transistor SMD t04 10k resistor array SIP 10k resistor network SIP 9 pin 8-pin resistor 10k smd 103 rp bus r2r resistor ladder networks smd smd diode marking code T03 8 pin ic 4606 transistor SMD t04 51 ic resistor 331/471
    Text: w w w . b o u r n s . c o m Resistor Networks I. Product Selection II. Popular Resistance III. Thick Film Products Through-hole Packages


    Original     		PDF

    88E1011S

    Abstract: ADS8540 Marvell Ethernet PHY 88E1011S ATX POWER SUPPLY 400W circuit diagram 825v hg MPC840 LT1764 88e1011 DDR DIMM pinout micron 184 FCC2
    Text: ADS Board Specification MPC8560/ADS8540/D Rev. 0.5.1, 6/2004 MPC8560/MPC8540 ADS Specification MPC8560/MPC8540 Power QUICC IIITM Integrated Communications Processor ADS Board Specification PRELIMINARY—SUBJECT TO CHANGE WITHOUT NOTICE Documentation History


    Original     		MPC8560/ADS8540/D MPC8560/MPC8540 MPC8560/MPC8540 MPC8540/MPC840 88E1011S ADS8540 Marvell Ethernet PHY 88E1011S ATX POWER SUPPLY 400W circuit diagram 825v hg MPC840 LT1764 88e1011 DDR DIMM pinout micron 184 FCC2 PDF

    mdd 2605

    Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
    Text: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900


    Original     		element-14 element14 mdd 2605 HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943 PDF

    MDS-1212

    Abstract: MICRON POWER RESISTOR MRC MICRON POWER RESISTOR 220w 01F2 MR22 mr08 RESISTOR 05ii MRC 433 660N MR22/24
    Text: Micron Power Resistors MRP Large-Capacity Type Resistors With Aluminum Case Economy Type * Please refer to MDS-1212 for more detailed information. MRC MRS Part Numbering System 10 Generic name Resistor element External shape Standard Resistance 11 Tolerance


    OCR Scan     		MDS-1212 75mm2 MICRON POWER RESISTOR MRC MICRON POWER RESISTOR 220w 01F2 MR22 mr08 RESISTOR 05ii MRC 433 660N MR22/24 PDF

    100PF

    Abstract: 8B10B ACS4110 ACS411CS ACS9020 AD1145
    Text: GO I— I GO O O O "si- Acapella Optical Modem IC ACS411CS Main Features * Three chip set supporting full duplex serial transm ission over twin optical fiber, one fib er w ith WDM. * C onfigurable parallel m icroprocessor bus interface. * Up to 16 independent synchronous data channels.


    OCR Scan     		ACS411CS 840Mbps 256kbps IS09001 100PF 8B10B ACS4110 ACS9020 AD1145 PDF