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    MICRON POWER RESISTOR MARKING MOS Search Results

    MICRON POWER RESISTOR MARKING MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MICRON POWER RESISTOR MARKING MOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A19045

    Abstract: No abstract text available
    Text: PTFA190451E PTFA190451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA190451E PTFA190451F 45-watt, H-30265-2 H-31265-2 A19045

    roger

    Abstract: H-30260-2 LM7805 ceramic capacitor 103 z 21
    Text: PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS FETs intended for ultra-linear CDMA applications. They are characterized for CDMA and


    Original     		PDF PTF041501E PTF041501F 150watt, CDMA2000 H-30260-2 H-31260-2 roger H-30260-2 LM7805 ceramic capacitor 103 z 21

    LM7805

    Abstract: a2031
    Text: PTFA210451E PTFA210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2110 – 2170 MHz Description The PTFA210451E and PTFA210451F are thermally-enhanced, 45-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA210451E PTFA210451F 45-watt, PTFA210451F* LM7805 a2031

    Untitled

    Abstract: No abstract text available
    Text: PTFA260451E PTFA260451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2.62 – 2.68 GHz Description The PTFA260451E and PTFA260451F are thermally-enhanced 45-watt, internally matched GOLDMOS FETs intended for CDMA2000 applications from 2.62 to 2.68 GHz. Thermally-enhanced


    Original     		PDF PTFA260451E PTFA260451F 45-watt, CDMA2000 PTFA260451F*

    PTFA081501E

    Abstract: BCP56 LM7805 PTFA081501F R-163
    Text: PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for CDMA and


    Original     		PDF PTFA081501E PTFA081501F PTFA081501E PTFA081501F 150-watt, CDMA2000 BCP56 LM7805 R-163

    PTF140451E

    Abstract: CAPACITOR 33PF 1kv elna 50v 200B BCP56 LM7805 PTF140451F r025 capacitor 103 1KV CERAMIC CAPACITOR "micron technology" c16
    Text: PTF140451E PTF140451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 – 1550 MHz PTF140451E Package 30265 Description The PTF140451E and PTF140451F are 45-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital Audio Broadcast operation in the 1450 to


    Original     		PDF PTF140451E PTF140451F PTF140451E PTF140451F 45-watt, CAPACITOR 33PF 1kv elna 50v 200B BCP56 LM7805 r025 capacitor 103 1KV CERAMIC CAPACITOR "micron technology" c16

    DS 469 ADJ

    Abstract: type 103 capacitor, 2kv RF
    Text: PTF040551E PTF040551F Thermally Enhanced High Power RF LDMOS FETs 55 W, 450 – 500 MHz Description The PTF040551E and PTF040551F are thermally-enhanced, 55-watt, internally matched GOLDMOS FETs intended for CDMA applications in the 450 to 500 MHz band. Full gold metallization ensures excellent device


    Original     		PDF PTF040551E PTF040551F 55-watt, PTF040551F* IS-95 DS 469 ADJ type 103 capacitor, 2kv RF

    Untitled

    Abstract: No abstract text available
    Text: PTFA240451E PTFA240451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2420 – 2480 MHz Description The PTFA240451E and PTFA240451F are thermally-enhanced, 45-watt, internally matched GOLDMOS FETs intended for CDMA2000 applications from 2420 to 2480 MHz. Thermallyenhanced packaging provides the coolest operation available. Full


    Original     		PDF PTFA240451E PTFA240451F 45-watt, CDMA2000 PTFA240451F*

    Untitled

    Abstract: No abstract text available
    Text: PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for CDMA and


    Original     		PDF PTFA081501E PTFA081501F 150-watt, CDMA2000 PTFA081501F* IS-95

    Untitled

    Abstract: No abstract text available
    Text: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA and CDMA2000


    Original     		PDF PTFA241301E PTFA241301F 130-watt, CDMA2000 PTFA241301F*

    PTFA210601E

    Abstract: No abstract text available
    Text: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are thermally-enhanced, 60watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA210601E PTFA210601F 60watt, PTFA210601F*

    Untitled

    Abstract: No abstract text available
    Text: PTF140451E PTF140451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 – 1550 MHz Description PTF140451E Package 30265 The PTF140451E and PTF140451F are 45-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital Audio Broadcast operation in the 1450 to


    Original     		PDF PTF140451E PTF140451F PTF140451E PTF140451F 45-watt,

    elna capacitor 22uf

    Abstract: No abstract text available
    Text: PTFA041001E PTFA041001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 460 – 470 MHz Description The PTFA041001E and PTFA041001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for GSM/ EDGE applications. Thermally-enhanced packaging provides the


    Original     		PDF PTFA041001E PTFA041001F 100-watt, H-30248-2 PTFA041001FT H-31248-2 elna capacitor 22uf

    Untitled

    Abstract: No abstract text available
    Text: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are thermally-enhanced, 60-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA210601E PTFA210601F 60-watt, H-30265-2 PTFA210601F* H-31265-2

    Untitled

    Abstract: No abstract text available
    Text: 256K x 36 2.5V VDD, HSTL, PIPELINED DDR SRAM 9Mb DDR SRAM MT57V256H36P FEATURES • • • • • • • • • • • • • • • • • • 165-Ball FBGA Fast cycle times: 5ns and 6ns 256K x 36 configuration Pipelined double data rate operation


    Original     		PDF MT57V256H36P 165-Ball MT57V256H36P

    MT57V1MH18E

    Abstract: MT57V512H36E
    Text: 1 MEG x 18, 512K x 36 2.5V VDD, HSTL, PIPELINED DDRb4 SRAM 18Mb DDR SRAM 4-Word Burst MT57V1MH18E MT57V512H36E FEATURES • • • • • • • • • • • • • • • • 165-BALL FBGA Fast cycle times: 5ns, 6ns, and 7.5ns Pipelined double data rate operation


    Original     		PDF MT57V1MH18E MT57V512H36E 165-BALL MT57V512H36E MT57V1MH18E

    MT57V1MH18A

    Abstract: MT57V512H36A
    Text: 1 MEG x 18, 512K x 36 2.5V VDD, HSTL, PIPELINED DDRb2 SRAM 18Mb DDR SRAM 2-Word Burst MT57V1MH18A MT57V512H36A FEATURES • • • • • • • • • • • • • • • • • Fast cycle times: 5ns, 6ns, and 7.5ns Pipelined double data rate operation


    Original     		PDF MT57V1MH18A MT57V512H36A MT57V1MH18A MT57V512H36A

    Untitled

    Abstract: No abstract text available
    Text: 512K x 18 2.5V VDD, HSTL, QDRb4 SRAM 9Mb QDR SRAM MT54V512H18E 4-Word Burst FEATURES • 9Mb Density 512Kx18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE operation • High frequency operation with future migration to


    Original     		PDF MT54V512H18E 512Kx18) MT54V512H18E

    Untitled

    Abstract: No abstract text available
    Text: 512K x 18 2.5V VDD, HSTL, QDRb2 SRAM 9Mb QDR SRAM MT54V512H18A 2-Word Burst FEATURES 165-BALL FBGA • 9Mb Density 512K x 18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE operation


    Original     		PDF MT54V512H18A 165-BALL MT54V512H18A

    G38-87

    Abstract: MT54V1MH18A MT54V512H36A
    Text: 1 MEG x 18, 512K x 36 2.5V VDD, HSTL, QDRb2 SRAM 18Mb QDR SRAM 2-Word Burst MT54V1MH18A MT54V512H36A FEATURES 165-BALL FBGA • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE operation


    Original     		PDF MT54V1MH18A MT54V512H36A 165-BALL MT54V1MH18A G38-87 MT54V512H36A

    G38-87

    Abstract: MT54V1MH18E MT54V512H36E
    Text: 1 MEG x 18, 512K x 36 2.5V VDD, HSTL, QDRb4 SRAM 18Mb QDR SRAM MT54V1MH18E MT54V512H36E 4-Word Burst FEATURES • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE operation • High frequency operation with future migration to


    Original     		PDF MT54V1MH18E MT54V512H36E MT54V1MH18E G38-87 MT54V512H36E

    LM7805 smd

    Abstract: BCP56 LM7805 PTF081301E PTF081301F transistor SMD LOA DD 127 D TRANSISTOR
    Text: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF081301E PTF081301F PTF081301E PTF081301F 130-watt, LM7805 smd BCP56 LM7805 transistor SMD LOA DD 127 D TRANSISTOR

    ALT230

    Abstract: No abstract text available
    Text: PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA and CDMA2000 operation


    Original     		PDF PTFA261301E PTFA261301F 130-watt, CDMA2000 ALT230

    Untitled

    Abstract: No abstract text available
    Text: PTFA260451E PTFA260451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2.62 – 2.68 GHz Description The PTFA260451E and PTFA260451F are thermally-enhanced 45-watt, internally matched GOLDMOS FETs intended for CDMA2000, Super3G 3GPP TSG RAN , and WiMAX applications


    Original     		PDF PTFA260451E PTFA260451F 45-watt, CDMA2000, H-30265-2 PTFA260451F* H-31265-2