Untitled
Abstract: No abstract text available
Text: OBSOLETE 4, 8 MEG x 36 ECC-OPTIMIZED DRAM SIMMs MT9D436 MT18D836 DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Four-CAS#, ECC-optimized configuration in a 72-pin,
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MT9D436
MT18D836
72-pin,
048-cycle
110ns
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IBM025161LG5D60
Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.
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MB81141621
MB81141622
MB81G8322
MB81116421
TC59R1608
2ns500MHz
TC59R0808
IBM025161LG5D60
gm72v16821
MD908
KM48S2020
TC59R1809
GM72V1682
KM4232W259Q60
KM416S1120A
IBM025171LG5D-70
KM44S4020AT
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Untitled
Abstract: No abstract text available
Text: OBSOLETE 4, 8 MEG x 36 ECC-OPTIMIZED DRAM SIMMs MT9D436 X MT18D836 X DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View 72-Pin SIMM 4 Meg x 36 (shown)
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MT9D436
MT18D836
72-Pin
72-pin,
048-cycle
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Untitled
Abstract: No abstract text available
Text: OBSOLETE 4, 8 MEG x 32 DRAM SIMMs MT8D432 X MT16D832(X) DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • JEDEC- and industry-standard pinout in a 72-pin, single in-line memory module (SIMM)
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MT8D432
MT16D832
72-pin,
048-cycle
72-Pin
MARKING18)
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edo dram 50ns 72-pin simm
Abstract: edo dram 60ns 72-pin simm dm65 edo dram 60ns 72-pin simm 32mb
Text: NOT RECOMMENDED FOR NEW DESIGNS 4, 8 MEG x 36 ECC-OPTIMIZED DRAM SIMMs DRAM MODULE MT9D436 X MT18D836 X For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets FEATURES PIN ASSIGNMENT Front View 72-Pin SIMM 4 Meg x 36 (shown)
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MT9D436
MT18D836
72-Pin
72pin,
048-cycle
MARKI133
edo dram 50ns 72-pin simm
edo dram 60ns 72-pin simm
dm65
edo dram 60ns 72-pin simm 32mb
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DM44
Abstract: 25AP-P edo dram 72-pin simm 4 m
Text: NOT RECOMMENDED FOR NEW DESIGNS 4, 8 MEG x 32 DRAM SIMMs DRAM MODULE MT8D432 X MT16D832(X) For the latest data sheet revisions, please refer to the Micron Web site: www.micronsemi.com/datasheets/ datasheet.html FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin,
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MT8D432
MT16D832
72-pin,
048-cycle
72-Pin
DM44
25AP-P
edo dram 72-pin simm 4 m
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS 4, 8 MEG x 36 ECC-OPTIMIZED DRAM SIMMs DRAM MODULE MT9D436 MT18D836 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets FEATURES • Four-CAS#, ECC-optimized configuration in a 72pin, single in-line memory module SIMM
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MT9D436
MT18D836
72pin,
048-cycle
72-Pin
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PC133 registered reference design
Abstract: 16 MB Micron EDO SIMM Module mt1l DS1849 10EF1 10EB2
Text: PRELIMINARY 512MB / 1GB x72, ECC 168-PIN REGISTERED FBGA SDRAM DIMM SYNCHRONOUS DRAM MODULE MT36LSDF6472G - 512MB MT36LSDF12872G - 1GB For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES PIN ASSIGNMENT (Front View)
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512MB
168-PIN
168-pin,
PC100
PC133
512MB
MT8VR12818AG
MT16VR25616AG
PC133 registered reference design
16 MB Micron EDO SIMM Module
mt1l
DS1849
10EF1
10EB2
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PC133 registered reference design
Abstract: MT9V
Text: ADVANCE 32, 64 MEG x 72 REGISTERED SDRAM DIMM SYNCHRONOUS DRAM MODULE MT18LSDT3272DG, MT18LSDT6472DG For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES PIN ASSIGNMENT FRONT VIEW 168-PIN DIMM
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168-pin,
PC133-
PC100-compliant
256MB
512MB
64m18
MT8VR12818AG
MT16VR25616AG
PC133 registered reference design
MT9V
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2mb 72-pin simm
Abstract: No abstract text available
Text: 4,8 MEG X 36 ECC-OPTIMIZED DRAM SIMMs MICRON I TECHNOLOGY, INC- MT9D436 MT18D836 DRAM MODULE For the latest data sheet revisions, piease referto the Micron Web site: www.micron.com/nii/nisp/html/ciatasheet.htmi FEATURES • Four-CAS#, ECC-optimized configuration in a 72-pin,
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MT9D436
MT18D836
72-pin,
048-cycle
72-Pin
2mb 72-pin simm
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Untitled
Abstract: No abstract text available
Text: 4’8 M E Gx36 MICRON* I ECC-OPTIMIZED DRAM SIMMs TECHNOLOGY, INC- l" R A M U MT9D436 X r tM IV I M T18D836 x MODULE For the latest data sheet revisions, please referto the Micron Web site: www.micron.com/mi/msp/htnl/datosheet.htnl FEATURES PIN ASSIGNMENT Front View)
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MT9D436
72-pin,
048-cycle
T18D836
72-Pin
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8 MEG X32 EDO
Abstract: No abstract text available
Text: 4,8 MEG X 32 DRAM SIMMs MICRON I TECHNOLOGY, INC- HR AM U lln m MT8D432 X MT16D832(X) IV I For the ia test data sheet revisions, piease refer to the Micron Web site: www.micron.com/mti/msp/htmi/ctatasheet.html IlJ| III FEATURES • JEDEC- and industry-standard pinout in a 72-pin,
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72-pin,
048-cycle
72-Pin
8 MEG X32 EDO
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Untitled
Abstract: No abstract text available
Text: 1,2 MEG X 32 DRAM SIMMs MICRON I TECHNOLOGY, INC- MT2D T 132(X) MT4D(T)232D(X) DRAM MODULE For the latest data sheet revisions, please referto the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin,
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72-pin,
orx32
024-cycle
72-Pin
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marking b7t
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b7E T> • b lllS M R OOOIbSO ÔT7 ■ MRN MICRON 64K SRAM MODULE X MT8S6432 32 SRAM MODULE 64K X 32 SRAM FEATURES High speed: 15*, 20,25,30 and 35ns High-performance, low-power CMOS process _ Single +5V +10% power supply Easy memory expansion with CE and OE functions
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MT8S6432
64-Pin
marking b7t
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b?E T> m b l l l S ^ DOO'ìb'ìD 4fl3 B U R N PRELIMINARY MICRON SF.ì.liCONDllCTORINC B 256K SRAM MODULE X MT8LS25632 32 SRAM MODULE 256K X 32 SRAM LOW VOLTAGE • High speed: 20*, 25 and 35ns • High-density 1MB design • High-performance, low-power, CMOS double-metal
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MT8LS25632
64-Pin
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LS132M
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR IN fc.4E D • b l l l S M I CmGfl74n TMl ■ URN PRELIMINARY MICRON j _« M .C O W U C T O M M M T8LS132 | M EGX 32 SRAMM O D U LE [ SRAM MODULE 1 MEG X 32 SRAM 3.3V WITH OUTPUT ENABLE FEATURES • • • • • • • • •
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CmGfl74n
72-Pin
LS132M
MT8LS132
T8LS132
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Untitled
Abstract: No abstract text available
Text: MICRON • 256K technCLOGV. inc. MICRON T E C H N O L O G Y INC SSE T> DRAM MODULE MT8D25632 32, 512K X 16 DRAM MODULE iu r n ■ blllSMT D Q D 4 7 b 7 4 E5 X 256K X 32, 512K x 16 FAST PAGE MODE MT8D25632 LOW POWER, EXTENDED REFRESH (MT8D25632 L) FEATURES
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MT8D25632
72-pin
512-cycle
YCLE24
0G04777
T8D25632
MT8025632
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Untitled
Abstract: No abstract text available
Text: MICRON • 4 MEG TECHNOLOur. inc . MICRON T E C H N O L O G Y INC S5E ]> ■ X bill5 ^ MT9D49 9 DRAM MODULE D D 0 4 7 4 7 b37 IMRN 4 MEG x 9 DRAM DRAM MODULE FAST PAGE MODE MT9D49 LOW POWER, EXTEDEND REFRESH (MT9D49 L) FEATURES • Industry standard pinout in a 30-pin. single-in-line
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MT9D49
30-pin.
025mW
024-cycle
128ms
MT9D49)
A0-A10
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON MT24D836 8 MEG X 36, 16 MEG X 18 DRAM MODULE 1 MICRON T E C H N O L O G Y INC 55E D • 8 MEG X 36,16 FAST PAGE MODE MEG x18 FEATURES PIN ASSIGNMENT Top View • Industry standard pinout in a 72-pin single-in-line package • High-perform ance, CM OS silicon-gate process
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MT24D836
72-pin
104mW
048-cycle
MT24D836M
A0-A10;
A0-A10
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR IN C MICRON I b3 E D 1 M EG DRAM MODULE • X blllSMT 32, 2 M E G X 0000032 HT T ■ URN MT8D132 16 D R A M M O D U L E 1 MEGx 32’ 2 MEGx 16 FAST-PAGE-MODE MT8D132 LOW POWER, POWER, LOW EXTENDED REFRESH (MT8D132 L) FEATURES PIN ASSIGNMENT (Top View)
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MT8D132
MT8D132)
MT8D132
72-pin
800mW
024-cycle
MT80132
MT6D132
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VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
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256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
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Untitled
Abstract: No abstract text available
Text: MICRON I 1 SEMICONDUCTOR INC. MT10D140 MEG X 40 DRAM MODULE 1 MEG x 40 DRAM DRAM MODULE FAST PAGE MODE MT10D140 LOW POWER, EXTENDED REFRESH (MT10D140 L) FEATURES MARKING OPTIONS • Tim ing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 72-pin SIMM (gold)
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MT10D140
MT10D140)
MT10D140
72-pin
er/128m
MT10D140G-6
T10D140isarandom
MT100140
0011SS1
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Untitled
Abstract: No abstract text available
Text: 256K, 512K x 32 DRAM SIMMs MICRON • IbCHNULUÜY. INC MT2D25632 X MT4D51232(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin single in-line memory module (SIMM) • 1MB (256K x 32) and 2MB (512K x 32)
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MT2D25632
MT4D51232
72-pin
512-cycle
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Untitled
Abstract: No abstract text available
Text: MICRON I 4’ 8M E Gx36 ECC-OPTIMIZED DRAM SIMMs TECHNOLOGY, INC. MT9D436X MT18D836 X DRAM MODULE FEATURES PIN ASSIGNMENT Front View • Four-CAS#, ECC-optimized configuration in a 72-pin, single in-line memory module (SIMM) • 16MB (4 Meg x 36) and 32MB (8 Meg x 36)
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MT9D436X
MT18D836
72-pin,
048-cycle
72-Pin
DD-12)
DD-13)
DD-13
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