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    MICROSEMI MOSFET 1000V Search Results

    MICROSEMI MOSFET 1000V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MICROSEMI MOSFET 1000V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bare Die mosfet

    Abstract: MM196 MSAFA1N100D UPF1N100 MSC1589
    Text: MM196 6 MOSFET Multi-Chip Module SANTA ANA DIVISION PRELIMINARY SPECIFICATION The MM196 is a Multi-Chip Module, MCM, incorporating 6 independent MOSFET die into a convenient BGA package. This device is also available as discrete individual packaged Powermite3, see Microsemi data sheet


    Original     		PDF MM196 MM196 UPF1N100. MSAFA1N100D. MSC1589 bare Die mosfet MSAFA1N100D UPF1N100

    vienna rectifier

    Abstract: Zero crossing switching thyristors module three phase bridge rectifier picture S6 9A Diode Smd Cree SiC diode die single phase vienna rectifier rectifier diode 230V AC input and 230V DC output rectifier three phase 40a Cree SiC MOSFET design and of 1- vienna rectifier
    Text: Low profile power module combined with state of the art MOSFET switches and SiC diodes allows high frequency and very compact three-phase sinusoidal input rectifiers Serge Bontemps 1 , Alain Calmels(1), Simon D. Round(2), Johann W. Kolar(2) (1) Microsemi PPG power module Products, Chemin de Magret, F-33700 Merignac


    Original     		PDF F-33700 CH-8092 APEC2007) vienna rectifier Zero crossing switching thyristors module three phase bridge rectifier picture S6 9A Diode Smd Cree SiC diode die single phase vienna rectifier rectifier diode 230V AC input and 230V DC output rectifier three phase 40a Cree SiC MOSFET design and of 1- vienna rectifier

    Untitled

    Abstract: No abstract text available
    Text: DRF1200 1000V, 13A, 30MHz MOSFET Driver Hybrid The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.


    Original     		PDF DRF1200 30MHz DRF1200

    Untitled

    Abstract: No abstract text available
    Text: DRF1203 1000V, 12A, 30MHz MOSFET Driver Hybrid The DRF1203 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.


    Original     		PDF DRF1203 30MHz DRF1203

    Untitled

    Abstract: No abstract text available
    Text: DRF1201 1000V, 26A, 30MHz MOSFET Driver Hybrid The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.


    Original     		PDF DRF1201 30MHz DRF1201

    Untitled

    Abstract: No abstract text available
    Text: DRF1201 1000V, 26A, 30MHz MOSFET Driver Hybrid The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.


    Original     		PDF DRF1201 30MHz DRF1201

    Untitled

    Abstract: No abstract text available
    Text: APT26M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330m typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch


    Original     		PDF APT26M100JCU2 OT-227)

    Untitled

    Abstract: No abstract text available
    Text: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330m typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies D Features  G S  SiC Schottky Diode


    Original     		PDF APT26M100JCU3 OT-227)

    Untitled

    Abstract: No abstract text available
    Text: APTM100TA35SCTPG APTM100TA35SCPG Triple phase leg MOSFET Power Module VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control


    Original     		PDF APTM100TA35SCTPG APTM100TA35SCPG

    Untitled

    Abstract: No abstract text available
    Text: APTM100TA35SCTPG APTM100TA35SCPG Triple phase leg MOSFET Power Module VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control


    Original     		PDF APTM100TA35SCTPG APTM100TA35SCPG APTM100TA35SC

    Untitled

    Abstract: No abstract text available
    Text: APTM100UM65SCAVG Single switch Series & SiC parallel diodes MOSFET Power Module D DK VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies


    Original     		PDF APTM100UM65SCAVG

    Untitled

    Abstract: No abstract text available
    Text: APTM100UM65SCAVG Single switch Series & SiC parallel diodes MOSFET Power Module D DK VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C Application • Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies


    Original     		PDF APTM100UM65SCAVG

    Untitled

    Abstract: No abstract text available
    Text: APTM100DA18CT1G VDSS = 1000V RDSon = 180m typ @ Tj = 25°C ID = 40A @ Tc = 25°C Boost chopper MOSFET + SiC chopper diode Power Module Application 5 6 11 •   AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Features


    Original     		PDF APTM100DA18CT1G

    Untitled

    Abstract: No abstract text available
    Text: APTM100SK33T1G VDSS = 1000V RDSon = 330m typ @ Tj = 25°C ID = 23A @ Tc = 25°C Buck chopper MOSFET Power Module 5 11 6 Application •  Q1 7 AC and DC motor control Switched Mode Power Supplies Features 8 NTC 3 4  CR2 1 2    12 Power MOS 8 MOSFETs


    Original     		PDF APTM100SK33T1G

    Untitled

    Abstract: No abstract text available
    Text: APTM100H45SCTG VDSS = 1000V RDSon = 450mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C Full bridge Series & SiC parallel diodes MOSFET Power Module VBUS CR3A CR1A CR1B Q1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies


    Original     		PDF APTM100H45SCTG

    Untitled

    Abstract: No abstract text available
    Text: APTM100A13SCG Phase leg Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS Features • Power MOS 7 MOSFETs


    Original     		PDF APTM100A13SCG

    Untitled

    Abstract: No abstract text available
    Text: DRF1200 1000V, 13A, 30MHz MOSFET Driver Hybrid The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.


    Original     		PDF DRF1200 30MHz DRF1200 AcouRG188. DRF1201.

    ultrasound transducer high power driver

    Abstract: DRF1200 SG 939 ultrasound transducer circuit driver DRF1201 DRF12XX
    Text: DRF1200 1000V, 13A, 30MHz MOSFET Driver Hybrid The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.


    Original     		PDF DRF1200 30MHz DRF1200 DRF1201. ultrasound transducer high power driver SG 939 ultrasound transducer circuit driver DRF1201 DRF12XX

    Untitled

    Abstract: No abstract text available
    Text: DRF1203 1000V, 12A, 30MHz MOSFET Driver Hybrid The DRF1203 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.


    Original     		PDF DRF1203 30MHz DRF1203 AG188. DRF1203.

    Untitled

    Abstract: No abstract text available
    Text: DRF1201 1000V, 26A, 30MHz MOSFET Driver Hybrid The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.


    Original     		PDF DRF1201 30MHz DRF1201 CMRG188. DRF1201.

    DRF1200

    Abstract: pin diagram of MOSFET microsemi mosfet 1000V
    Text: DRF1200 G 1000V, 13A, 30MHz MOSFET Driver Hybrid The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.


    Original     		PDF DRF1200 30MHz RG188. DRF1201. pin diagram of MOSFET microsemi mosfet 1000V

    Untitled

    Abstract: No abstract text available
    Text: DRF1200 1000V, 13A, 30MHz MOSFET Driver Hybrid The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.


    Original     		PDF DRF1200 30MHz DRF1200 RG188. DRF1201.

    Untitled

    Abstract: No abstract text available
    Text: DRF1200 1000V, 13A, 30MHz MOSFET Driver Hybrid The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.


    Original     		PDF DRF1200 30MHz DRF1200 RG188. DRF1201.

    DRF1201

    Abstract: DRF12XX mosfet drive circuit diagram
    Text: DRF1201 1000V, 26A, 30MHz MOSFET Driver Hybrid The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution.


    Original     		PDF DRF1201 30MHz DRF1201 DRF1201. DRF12XX mosfet drive circuit diagram