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    MICROSEMI RF TRANSISTOR Search Results

    MICROSEMI RF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MICROSEMI RF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    Untitled

    Abstract: No abstract text available
    Text: SD1224 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ! ! ! ! ! ! ! W W W . Microsemi .COM The SD1224 is an epitaxial silicon NPN planar transistor designed


    Original     		PDF SD1224 SD1224 MSC1643

    RF power transistors 3000

    Abstract: MS1078 MICROSEMI RF TRANSISTOR HF SSB APPLICATIONS RF
    Text: MS1078 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com W W W . Microsemi .COM The MS1078 is a Class AB epitaxial silicon NPN planar transistor


    Original     		PDF MS1078 MS1078 MSC1611 RF power transistors 3000 MICROSEMI RF TRANSISTOR HF SSB APPLICATIONS RF

    MSC1610

    Abstract: MS1077
    Text: MS1077 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com W W W . Microsemi .COM The MS1077 is a Class AB epitaxial silicon NPN planar transistor


    Original     		PDF MS1077 MS1077 MSC1610

    VRF2933FL

    Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
    Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system


    Original     		PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301

    Untitled

    Abstract: No abstract text available
    Text: MMBR951MLT1/MRF9511MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES ! Low cost SOT23/SOT143 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Parameter Collector-Base Voltage


    Original     		PDF MMBR951MLT1/MRF9511MLT1 OT23/SOT143 OT-143 OT-23 MRF9511MLT1 MMBR951MLT1

    UM9441 UM9442

    Abstract: UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter
    Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of


    Original     		PDF MPD-101A UM9441 UM9442 UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter

    UM9442

    Abstract: UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers
    Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of


    Original     		PDF MPD-101A UM9442 UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers

    mrf571

    Abstract: MRF5711MLT1 MMBR571MLT1 RF LNA 10 GHz
    Text: MMBR571MLT1/MRF5711MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES ! Low cost SOT23/SOT143 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Parameter Collector-Base Voltage


    Original     		PDF MMBR571MLT1/MRF5711MLT1 OT23/SOT143 OT-143 OT-23 MRF5711MLT1 MMBR571MLT1 mrf571 MRF5711MLT1 MMBR571MLT1 RF LNA 10 GHz

    transistor military

    Abstract: MS3155 MS3107 transistor MS3154 reader rf01 GSM Base Station RF TRANSISTOR 1.5 GHZ RF01 MS3106
    Text: Winter 1997-1998 Microsemi's RF Products group in Montgomeriville, PA is supplier of RF Power Transistors for use in military/ space avionics and commercial cellular base station designs. Cellular GSM Base Station Transistor Lineups Microsemi RF Products has a


    Original     		PDF Trans50 MS3009 MS3102 MS3155 MS3101 MS3156 MS3107 transistor military MS3155 MS3107 transistor MS3154 reader rf01 GSM Base Station RF TRANSISTOR 1.5 GHZ RF01 MS3106

    NPN microwave power transistor 865

    Abstract: 2SD1144 SD1144 865 RF transistor
    Text: SD1144 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com 470 MHz !" 12.5 Volts !" Common Emitter !" Collector Efficiency


    Original     		PDF SD1144 SD1144 MSC1613 NPN microwave power transistor 865 2SD1144 865 RF transistor

    SD1012-03

    Abstract: Ic 346 SD1012
    Text: SD1012-03 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com 175 MHz !" 12.5 Volts !" Efficiency 50% !" Common Emitter !"


    Original     		PDF SD1012-03 SD1012-03 MSC1626 Ic 346 SD1012

    MSC1651

    Abstract: No abstract text available
    Text: MS2176 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS TCASE = 25°C Symbol VCBO VCES VEBO IC


    Original     		PDF MS2176 D01-04 MSC1651

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    HF SSB APPLICATIONS RF

    Abstract: No abstract text available
    Text: MS1005 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com 30 MHz !" 40 Volts !" IMD –30 dB !" Common Emitter !" Gold Metallization


    Original     		PDF MS1005 MS1005 HF SSB APPLICATIONS RF

    RF Transistor reference

    Abstract: COMMUNICATIONS TRANSISTOR CORP RF output Design MSC Microwave rf transistors cross reference thomson microwave transistor
    Text: Spring/Summer 1998 RF Transistors for Avionics and Communications Microsemi RF Products has an industry proven product portfolio for the avionics marketplace. The entire RF product portfolio covers applications from 2 MHz to 4 GHz but the avionics products are the foundation of the


    Original     		PDF

    M111

    Abstract: MS1504 MS1510 6lfl
    Text: MS1510 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com 470 MHz !" 12.5 Volts !" Efficiency 55% !" Common Emitter !" POUT = 38 W Min.


    Original     		PDF MS1510 MS1510 MSC1627 M111 MS1504 6lfl

    SD1014-02

    Abstract: No abstract text available
    Text: SD1014-02 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com 175 MHz !" 12.5 Volts !" Common Emitter !" !"POUT = 15 W Min.


    Original     		PDF SD1014-02 SD1014-02 MSC1629

    2SD1146

    Abstract: SD1146
    Text: SD1146 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com 470 MHz !" 12.5 Volts !" Efficiency 60% !" Common Emitter !" !"POUT = 10 W Min.


    Original     		PDF SD1146 SD1146 MSC1613 2SD1146

    TR13

    Abstract: No abstract text available
    Text: Manufacture Diodes, IGBTs, LED Driver, Small Signal & Analog, RF Power,.verter, Power Modules, RF Transistors, Power Over Ethernet, PoE, PoE IC About Microsemi News keyword search: Contact Employment Home part number search: Submit Query 2 products: Submit Query


    Original     		PDF HSM360J/TR13 HSM360Je3/TR13 IEEE802 lrwnapp002/Sourcing/Automation/Automation CPR/05162011/MSCO/HSM360JE3 18-May-2011 TR13

    TACAN

    Abstract: dme 2000 TACAN transistor
    Text: MS2362 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Symbol VCBO VCES VEBO IC PDISS TJ TSTG ABSOLUTE MAXIMUM RATINGS TCASE = 25°C


    Original     		PDF MS2362 MSC1668 TACAN dme 2000 TACAN transistor

    MS1504

    Abstract: No abstract text available
    Text: MS1504 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES 160 MHz !" 13.6 Volts !" Common Emitter !" !"POUT = 30 W Min. !"GP = 10.0 dB Gain IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original     		PDF MS1504 MS1504 MSC1504

    SD1143

    Abstract: 2sd1143 transistor sd1143
    Text: SD1143 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES 175 MHz !" 12.5 Volts !" Common Emitter !" !"POUT = 10 W Min. !"GP = 10 dB Gain IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original     		PDF SD1143 SD1143 2sd1143 transistor sd1143

    MS1402

    Abstract: No abstract text available
    Text: MS1402 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES 450 - 512 MHz !" 12.5 Volts !" Efficiency 55% !" !"POUT = 2.0 W Min. !"GP = 10.0 dB Gain IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original     		PDF MS1402 MS1402 Paramete11-06 MSC1613