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    MICROWAVES TRANSISTORS Search Results

    MICROWAVES TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RX1214B300YI Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MICROWAVES TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12 km fm transmitter

    Abstract: microwaves 433333 10 km range fm transmitter 315 MHz square antenna an power 88-108 mhz "multipath performance" PIC BASIC bluetooth short distance rf tx ic 433 PIC12C509A
    Text: Design Methods for Control Class MicroRadio This tutorial covers worldwide regulatory issues, and key system, circuit, and firmware design aspects of modern short-range radio systems, particularly those for control applications. Parts 1-2 of 5 Parts Farron L. Dacus


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    UHV 806

    Abstract: metal detector plans seven wonders OC 140 germanium transistor microwaves Amplifier Research metal detector door bell chime receiver SiGe POWER TRANSISTOR frankfurt HFA3861
    Text: SPECIAL REPORT SiGe Advances SiGe Technology Makes Practical Advances This novel device technology is making major strides in RF and digital integrated circuits for highfrequency, high-speed communications systems. JACK BROWNE Publisher/Editor ILICON germanium SiGe is a semiconductor technology made for


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    D3C2040

    Abstract: D3C2060 DMI6018 D3I0120 D3C1218 D3C4080 Power Amplifier Module for GSM ADL5551 ADL5552 D3C0890
    Text: MWjuly03_051.ps 7/8/03 1:20 PM Page 51 DESIGN POWER-CONTROLLED AMPS Linear Power Control Of GSM Amplifier Power p This technique of controlling PA module output power has advantages in dynamic range and accuracy compared to traditional current-sensing and voltagesensing power-control methods.


    Original     		PDF MWjuly03 ADL5551 ADL5552 D3C2040 D3C2060 DMI6018 D3I0120 D3C1218 D3C4080 Power Amplifier Module for GSM D3C0890

    varactor diode model in ADS

    Abstract: working of colpitts oscillator Colpitts VCO design application of colpitts oscillator colpitts oscillator varactor diode for Colpitts oscillator ADS varactor diode varactor diode SPICE model Colpitts parallel-mode tank circuit agilent ads VCO
    Text: DESIGN FEATURE Trimless VCO Develop A Trimless Voltage-Controlled Modeling and designing a trimless Oscillator VCO requires a full understanding Trimless VCOs, Part 2 of the non-ideal nature of oscillator components and architectures. Chris O’Connor Member of Technical Staff


    Original     		PDF MTT-29, 770the MAX2620, 1/S11 varactor diode model in ADS working of colpitts oscillator Colpitts VCO design application of colpitts oscillator colpitts oscillator varactor diode for Colpitts oscillator ADS varactor diode varactor diode SPICE model Colpitts parallel-mode tank circuit agilent ads VCO

    HP RF TRANSISTOR GUIDE

    Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
    Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS


    Original     		PDF SG384/D HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor

    Untitled

    Abstract: No abstract text available
    Text: Cover Story jack browne Flat gain is hard to come by in any amplifier especially one with even moderate bandwidth. Achieving flat gain requires that the amplifier’s active devices are impedance matched as closely as possible for all of the frequencies within


    Original     		PDF YSF-122+

    bc237 smd

    Abstract: microwave sensor microwave distance sensors ne 556 timer bc237 equivalent SMD microwave RADAR motion sensors microwave motion sensors motion sensor doppler motion sensor doppler effect motion DOPPLER
    Text: APPLICATIONS SENSORS Gerhard Lohninger Microwave sensor SMX-1: Opening doors by invisible hands Microwave sensors have two key advantages over other motion sensors: they are independent of temperature and can make direct use of the Doppler effect. The SMX-1 microwave sensor with its


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    ad8307 power meter

    Abstract: AD8302 ad8307 transmit power control phase detector AD8302 "logarithmic amplifier" decibel meter design of multi section directional coupler AND8314 AD8314 Logarithmic Amplifier detector rf power
    Text: MWnov072 10/31/02 4:04 PM Page 72 RF POWER MEASUREMENTS DESIGN Make Precise Base-Station Power Measurements m A highly integrated device with a pair of logarithmic amplifier detectors operating to approximately 3 GHz can be useful in making amplitude and phase measurements on two input signals.


    Original     		PDF MWnov072 ad8307 power meter AD8302 ad8307 transmit power control phase detector AD8302 "logarithmic amplifier" decibel meter design of multi section directional coupler AND8314 AD8314 Logarithmic Amplifier detector rf power

    ALTERNATOR REGULATOR 14v

    Abstract: No abstract text available
    Text: High-Power and Hybrid Vehicles Increase Demand For Load-Dump Protection Page 1 of 2 About AE | For Advertisers | Contact AE | Subscr Search Powertrain Body Electronics Newsletter: Subscribe Now Current Newsletter Archive Resources: Blog Webinars Conferences


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    GPPO

    Abstract: No abstract text available
    Text: OPTICAL COMMUNICATION PRODUCT LINE “Providing integrated solution for 100 & 400Gbps Equipments” Providing Integrated Solutions for RF/Optical Assemblies New advanced 64 Gbps Mux & DeMux In QFN 5X5 mm package =


    Original     		PDF 400Gbps AC50025 30GHz) GPPO

    MRF873

    Abstract: j30 124 transistor 150 watt amplifier advantages and disadvantages MRF650 transistor j334 AN1526 motorola rf book transistor j326 power semiconductor 1973 Nippon capacitors
    Text: MOTOROLA Order this document by AN1526/D SEMICONDUCTOR APPLICATION NOTE RF Power Device Impedances: Practical Considerations AN1526 Prepared by: Alan Wood and Bob Davidson Motorola Semiconductor Products Sector ABSTRACT The definition of large–signal series equivalent input and


    Original     		PDF AN1526/D AN1526 AN1526/D* MRF873 j30 124 transistor 150 watt amplifier advantages and disadvantages MRF650 transistor j334 AN1526 motorola rf book transistor j326 power semiconductor 1973 Nippon capacitors

    s-band 50 Watt solid state power amplifier high p

    Abstract: AN1038 application hybrid coupler 3dB 180 TRANS7 hf combiners AN1032 AN1038 NES2427P-60 150 watt amplifier advantages and disadvantages power combiner 4 watt VHF
    Text: California Eastern Laboratories APPLICATION NOTE AN1038 A 70-W S-Band Amplifier For MMDS & Wireless Data/Internet Applications Shansong Song and Raymond Basset California Eastern Laboratories, Inc 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 DESIGN CHALLENGES


    Original     		PDF AN1038 ato50 60-Watt s-band 50 Watt solid state power amplifier high p AN1038 application hybrid coupler 3dB 180 TRANS7 hf combiners AN1032 AN1038 NES2427P-60 150 watt amplifier advantages and disadvantages power combiner 4 watt VHF

    2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF873 motorola an282 application RF TRANSISTOR 2.5 GHZ s parameter Theory of Modern Electronic Semiconductor Device Motorola Power Transistor Data Book J102 fet uhf microwave fet 2 watt rf transistor
    Text: MOTOROLA Order this document by AN1526/D SEMICONDUCTOR APPLICATION NOTE AN1526 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. RF Power Device Impedances: Practical Considerations Prepared by: Alan Wood and Bob Davidson


    Original     		PDF AN1526/D AN1526 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF873 motorola an282 application RF TRANSISTOR 2.5 GHZ s parameter Theory of Modern Electronic Semiconductor Device Motorola Power Transistor Data Book J102 fet uhf microwave fet 2 watt rf transistor

    MRF873

    Abstract: motorola SEMICONDUCTOR APPLICATION NOTE POWER AMP motorola an282 application MRF650 motorola rf Power Transistor Data Book schematic diagram 800 watt power amplifier TRANSISTOR D 1978 AN1526 Theory of Modern Electronic Semiconductor Device broad-band Microwave Class-C Transistor Amplifiers
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1526/D AN1526 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. RF Power Device Impedances:


    Original     		PDF AN1526/D AN1526 MRF873 motorola SEMICONDUCTOR APPLICATION NOTE POWER AMP motorola an282 application MRF650 motorola rf Power Transistor Data Book schematic diagram 800 watt power amplifier TRANSISTOR D 1978 AN1526 Theory of Modern Electronic Semiconductor Device broad-band Microwave Class-C Transistor Amplifiers

    SIT Static Induction Transistor

    Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
    Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are


    Original     		PDF AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier

    the working of IC 4047

    Abstract: IC 4047 working ic 4047 IC 4047 BE data sheet of IC 4047 RF MESFET S parameters pindiode switch
    Text: TUTORIAL DISTORTION IN VOLTAGE-VARIABLE ATTENUATORS W ith bandwidth a precious commodity, designers are faced with the challenge of providing increasingly larger amounts of information to a growing number of users. This information can be in many forms. Internet browsing, short messaging, e-mail and fax applications, to name just


    Original     		PDF

    MRF1507

    Abstract: EB209 MRF5007 N4000
    Text: MOTOROLA EB209 Order this document by EB209/D SEMICONDUCTOR ENGINEERING BULLETIN EB209 Mounting Method for RF Power Leadless Surface Mount Transistors Prepared by: Jeanne Pavio, David Dougherty, Mike McCloskey, David Runton and Alex Elliott Motorola Semiconductor Products Sector


    Original     		PDF EB209 EB209/D MRF1507 EB209 MRF5007 N4000

    C-Band Power GaAs FET HEMT Chips

    Abstract: CMC 707 7 transistor solid state x-band s-parameter transistor RF TRANSISTOR 1.5 GHZ dual gate microwave fet IC MMIC X-band amplifier HEMT MMIC POWER AMPLIFIER Three MMIC Solution for an X-band RF Front End multilayer lithography ic fabrication GaAs FET HEMT Chips
    Text: KU-BAND MMIC POWER AMPLIFIERS DEVELOPED USING MSAG MESFET TECHNOLOGY T his article presents the design approach and test results of 1, 1.5, 2 and 5 W, Kuband MMIC power amplifiers developed using the high performance MSAG MESFET technology. Both single-ended and


    Original     		PDF

    cte2

    Abstract: ansys MRF1507 thermal analysis on pcb EB209 MRF5007 N4000
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by EB209/D SEMICONDUCTOR ENGINEERING BULLETIN EB209 Mounting Method for RF Power Leadless Surface Mount Transistors Prepared by: Jeanne Pavio, David Dougherty, Mike McCloskey, David Runton and Alex Elliott


    Original     		PDF EB209/D EB209 cte2 ansys MRF1507 thermal analysis on pcb EB209 MRF5007 N4000

    MRF1507

    Abstract: EB209 MRF5007 N4000 motorola rf book MRF50
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by EB209/D SEMICONDUCTOR ENGINEERING BULLETIN ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 EB209 Mounting Method for RF Power Leadless Surface Mount Transistors Prepared by: Jeanne Pavio, David Dougherty, Mike McCloskey, David Runton and Alex Elliott


    Original     		PDF EB209/D EB209 MRF1507 EB209 MRF5007 N4000 motorola rf book MRF50

    AC power line filtering capacitors

    Abstract: inductors 10 micro henry schematic diagram 48V telecom series 5 SLC skycap RF Power Feed-Through Capacitors with Band Conductor, Class 1 Ceramic SILVER MICA capacitor high voltage 1000 micro farad electrolytic capacitor avx film elco transformer MIL-C-11015
    Text: 4 Cap Array: A/D: AC: Accu L: Accu F: Accu P: AccuGuard: Act ve Components: Alternating Current: Aluminum Electrolytic: Ambient Noise: Ambient Temperature: Ammo-Pack: Ampere: Analog Circuit: Anode: Automatic Insertion: Axial Leads: B Tolerance: Backpanel:


    Original     		PDF Coil-1496 S-TPG5M1098-N AC power line filtering capacitors inductors 10 micro henry schematic diagram 48V telecom series 5 SLC skycap RF Power Feed-Through Capacitors with Band Conductor, Class 1 Ceramic SILVER MICA capacitor high voltage 1000 micro farad electrolytic capacitor avx film elco transformer MIL-C-11015

    QUALCOMM MSM

    Abstract: TA0003 10MHz 10dBm oscillator gilbert
    Text: TA0003  TA0003 HBT Technology Adds Power to CDMA Chip Set          Efficient bandwidth utilization and low operating power characterize code-division-multiple-access CDMA transmissions, capturing the interest of several major


    Original     		PDF TA0003 RF9907 -45dB 10MHz 175MHz. QUALCOMM MSM TA0003 10MHz 10dBm oscillator gilbert

    AC power line filtering capacitors

    Abstract: inductor 100 micro henry inductors 10 micro henry schematic diagram 48V telecom series 5 SLC xy capacitor 1000 micro farad aluminum electrolytic capacitor disc Piezoelectric crystal ups manufacturing transformer diagram elco transformer inductors 33 micro henry
    Text: 4 Cap Array: A/D: AC: Accu L: Accu F: Accu P: AccuGuard: Act ve Components: Alternating Current: Aluminum Electrolytic: Ambient Noise: Ambient Temperature: Ammo-Pack: Ampere: Analog Circuit: Anode: Automatic Insertion: Axial Leads: B Tolerance: Backpanel:


    Original     		PDF S-TPG5M1098-N AC power line filtering capacitors inductor 100 micro henry inductors 10 micro henry schematic diagram 48V telecom series 5 SLC xy capacitor 1000 micro farad aluminum electrolytic capacitor disc Piezoelectric crystal ups manufacturing transformer diagram elco transformer inductors 33 micro henry

    Granberg

    Abstract: AR305 create uhf vhf tv matching transformer "Good RF Construction Practices and Techniques" Practical Wideband RF Power Transformers ar164 Design of H. F. Wideband Power Transformers Building push-pull multioctave, VHF power amplifiers 300w amplifier rf power transformers
    Text: BUILDING PUSH-PULL, MULTIOCTAVE, VHF POWER AMPLIFIERS Prepared By H. ü. Granberg Motorola Semiconductor Products Sector Reprinted with permission of Microwaves & RF. November 1987 issue. 1987 Hayden Publishing Co. Inc., All rights reserved. MOTOROLA Semiconductor Products Inc.


    OCR Scan     		PDF AR305/D Granberg AR305 create uhf vhf tv matching transformer "Good RF Construction Practices and Techniques" Practical Wideband RF Power Transformers ar164 Design of H. F. Wideband Power Transformers Building push-pull multioctave, VHF power amplifiers 300w amplifier rf power transformers