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    MIL GRADE TRANSISTOR ARRAY Search Results

    MIL GRADE TRANSISTOR ARRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MIL GRADE TRANSISTOR ARRAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4 npn transistor ic 14pin

    Abstract: lowest noise audio NPN transistor C10535E PA104 MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY
    Text: DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA104B: Studded ceramic package provides superior thermal dissipation


    Original     		PDF PA104 PA104B: PA104G: 14-pin PA104 4 npn transistor ic 14pin lowest noise audio NPN transistor C10535E MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY

    4 npn transistor ic 14pin

    Abstract: MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6
    Text: DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package


    Original     		PDF PA101 PA101B: 14-pin PA101G: PA101B-E1 4 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6

    4 npn transistor ic 14pin

    Abstract: 8 npn transistor ic 14pin C10535E UPA102G
    Text: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package


    Original     		PDF PA102 PA102B: 14-pin PA102G: PA102 4 npn transistor ic 14pin 8 npn transistor ic 14pin C10535E UPA102G

    4 npn transistor ic 14pin

    Abstract: C10535E PA103 lowest noise audio NPN transistor
    Text: DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS:


    Original     		PDF PA103 PA103B: PA103G: 14-pin PA103 4 npn transistor ic 14pin C10535E lowest noise audio NPN transistor

    PA101B

    Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
    Text: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.


    Original     		PDF PA101 PA102 PA103 PA104 P10944EJ2V0AN00 PA101B PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00

    MICRO-X TRANSISTOR MARK Q6

    Abstract: C10535E
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    C10535E

    Abstract: PA104
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    14pin npn transistor

    Abstract: C10535E
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    C10535E

    Abstract: PA103
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    smd transistor HX

    Abstract: TRANSISTOR SMD MARKING CODE TK TRANSISTOR SMD MARKING CODE MP smd transistor HX 45 cdp68hc68 hc221 TRANSISTOR SMD MARKING CODE WM intersil standard part marking HIP SMD TRANSISTOR MARKING by 4p TRANSISTOR SMD MARKING CODES
    Text: Ordering Nomenclature Guides 2 2-3 Elantec TYPES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-4 5962 SMD/DSCC - QML TYPES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF 82CXXX -25oC -40oC -55oC 125oC JM38510/ 1-888-INTERSIL smd transistor HX TRANSISTOR SMD MARKING CODE TK TRANSISTOR SMD MARKING CODE MP smd transistor HX 45 cdp68hc68 hc221 TRANSISTOR SMD MARKING CODE WM intersil standard part marking HIP SMD TRANSISTOR MARKING by 4p TRANSISTOR SMD MARKING CODES

    transistor smd za

    Abstract: smd transistor HX smd transistor HX 45 transistor smd xc transistor smd xb smd diode code T7 INTERSIL CROSS REFERENCE clocks ceramic pin grid array CPGA solder wire HMP CA3260
    Text: Ordering Nomenclature I NTERSIL N OMENCLATURE GUIDE Intersil Nomenclatures ISL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 EL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF JM38510/ 1-888-INTERSIL transistor smd za smd transistor HX smd transistor HX 45 transistor smd xc transistor smd xb smd diode code T7 INTERSIL CROSS REFERENCE clocks ceramic pin grid array CPGA solder wire HMP CA3260

    transistor smd za

    Abstract: smd transistor HX SMD transistor Mu CD4000 cross REFERENCE TEPQFN CERAMIC LEADLESS CHIP CARRIER transistor smd za 28 SMD TRANSISTOR 1B t S14 SMD CA3260
    Text: Ordering Nomenclature 19 2009 P RODUCT S ELECTION GUIDE Intersil Nomenclatures ISL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19-2 EL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF JM38510/ 1-888-INTERSIL transistor smd za smd transistor HX SMD transistor Mu CD4000 cross REFERENCE TEPQFN CERAMIC LEADLESS CHIP CARRIER transistor smd za 28 SMD TRANSISTOR 1B t S14 SMD CA3260

    transistor smd za 28

    Abstract: transistor smd za solder wire HMP 6 ld SOT-23 CA3260 nomenclatures CD4000 CDP65C51 X40015 transistor ZA 16
    Text: Ordering Nomenclature 18 2006 P RODUCT S ELECTION GUIDE Intersil Nomenclatures ISL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18-2 EL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF 82CXXX JM38510/ 1-888-INTERSIL transistor smd za 28 transistor smd za solder wire HMP 6 ld SOT-23 CA3260 nomenclatures CD4000 CDP65C51 X40015 transistor ZA 16

    sot 23 code 27A

    Abstract: cd4000 cmos TEPQFN CERAMIC LEADLESS CHIP CARRIER CLCC intersil cdp65C51 22-16 diode smd
    Text: Ordering Nomenclature 22 2005 P RODUCT S ELECTION GUIDE Intersil Nomenclatures ISL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22-2 EL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF 82CXXX JM38510/ 1-888-INTERSIL sot 23 code 27A cd4000 cmos TEPQFN CERAMIC LEADLESS CHIP CARRIER CLCC intersil cdp65C51 22-16 diode smd

    4 npn transistor ic 14pin

    Abstract: PA1032 8 npn transistor ic 14pin
    Text: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIM ENSIONS Units in mm FEATURES • FIVE M O NO LITHIC 9 GHz fr T R A NSISTO R S: ¿fPA103 B Two of these use a common em itter pin and can be used as differential am plifiers


    OCR Scan     		PDF iPA103B: iPA103G: 14-pin fPA103 PA103 14-pin 4 npn transistor ic 14pin PA1032 8 npn transistor ic 14pin

    ua104

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR _jfPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • • • OUTLINE DIMENSIONS Units in mm 9 GHz C O N FIG U RA BLE TRA NSISTO R BASED O R/NOR CIRCUITRY OUTSTANDING Kif e LINEARITY /iPA1 04B TW O PACKAGE O PTIO NS:


    OCR Scan     		PDF uPA104 PA104B: PA104G 14-pin PA104 ua104

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • TW O BUILT-IN DIFFER EN TIA L AM PLIFIER CIRCUITS: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)


    OCR Scan     		PDF uPA102 PA102B: PA102G: 14-pin PA102

    IC-3368

    Abstract: smd transistor 9j UPA1600GS iso 1207 PA-1600 20PIN MIL GRADE TRANSISTOR ARRAY PA1600 SMD transistor 6J U
    Text: DATA SHEET NEC FIELD EFFECT POWER TRANSISTOR i COMPOUND — ¿¿PA1600 r MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The juPA1600 is M onolithic N-channel Pow er M O S FET A rray that built CONNECTION DIAGRAM in 8 circuits and Gate Protection Diode designed for LED, Relay,


    OCR Scan     		PDF uPA1600 IC-3368 smd transistor 9j UPA1600GS iso 1207 PA-1600 20PIN MIL GRADE TRANSISTOR ARRAY PA1600 SMD transistor 6J U

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR _jfPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • FIVE M O NO LITHIC 9 GHz fr T R A NSISTO R S: /iPA103 B Two of these use a common em itter pin and can be used as differential am plifiers


    OCR Scan     		PDF uPA103 PA103B: PA103G: /iPA103 14-pin PA103 14-pin

    mpc5023

    Abstract: Oa05 MPC5201 HPC5020 Oa203 OA206 OA202 NEC bidirectional zener diodes OA03A OP 7241
    Text: MW 3 1993 111 t V ANALOG MASTER BIPOLAR LINEAR ARRAYS c h s , v -c h s , m -c h s Series - NEC Electronics Inc. March 1993 Description Figure 1. Typical Analog Master Die NEC's Analog M aster fam ilies CHS, V-CHS, M-CHS Series are bipolar linear arrays for developing analog


    OCR Scan     		PDF

    mpa1601

    Abstract: PA1601 IEI-1207 uPA1601GS transistor SMD 601 IEI-1213 Ua1601 UPA1601 16PIN NEC 1601 fet
    Text: DATA SHEET NEC -Ä - V COMPOUND FIELD EFFECT POWER TRANSISTOR „PA1601 MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The ¿/PA1601 is M o n o lith ic N-channel Power MOS FET A rray th a t b u ilt in 7 circu its and resistance designed fo r LED, Relay, Therm al Head,


    OCR Scan     		PDF uPA1601 u/PA1601 mpa1601 PA1601 IEI-1207 uPA1601GS transistor SMD 601 IEI-1213 Ua1601 16PIN NEC 1601 fet

    IEI-1207

    Abstract: PA1602 IC-3370 iso 1207 16PIN IC 3370
    Text: DATA SHEET NEC COMPOUND äm m mFIELD m EFFECT POWER TRANSISTOR r „PAI 602 MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The ¡iPA1602 is Monolithic N-channel Power MOS FET Array that built CONNECTION DIAGRAM in 7 circuits designed for LED, Relay, Thermal Head, and so on.


    OCR Scan     		PDF uPA1602 IEI-1207 PA1602 IC-3370 iso 1207 16PIN IC 3370

    nec a1640

    Abstract: transistor a1640 IC-3373 smd transistor yb a1640 IEI-1213 IPA1640GS MEI-1202 DD 127 transistor
    Text: DATA SHEET nec Æmsmrnm COMPOUND FIELD EFFECT POWER TRANSISTOR r ßPM 640 MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The /¿PA1640 is M onolithic N-channel Power M O S FET A rray that built CONNECTION DIAGRAM in 8 circuits w ith 2 A N D GATE. In groups of 4 circuits and they each have ENABLE term inal.


    OCR Scan     		PDF uPA1640 PA1640GS 20-Pin nec a1640 transistor a1640 IC-3373 smd transistor yb a1640 IEI-1213 IPA1640GS MEI-1202 DD 127 transistor

    16PIN

    Abstract: IEI-1213 MEI-1202 UPA1604 DD 127 D transistor
    Text: DATA SHEET N E C COMPOUND FIELD EFFECT POWER TRANSISTOR r i — I 9 H I ¿ ¿ P A 1 6 4 MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The ¿uPA1604 is M onolithic N-channel Pow er M O S FET A rray that built CONNECTION DIAGRAM in 4 circuits, Clump Diode and resistances designed for LED, Relay,


    OCR Scan     		PDF uPA1604 16PIN IEI-1213 MEI-1202 DD 127 D transistor