SMJ44C256
Abstract: 44C256 44c25680 SMJ44C256-10 SMJ44C256-12 SMJ44C256-15 SMJ44C256-80 44C256-80 44c256-12 44C256-10
Text: SMJ44C256 262144 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS034C – MAY 1989 – REVISED JUNE 1995 D D D D D D D D D D Organization . . . 262 144 Words x 4 Bits Single 5-V Supply 10% Tolerance Processed to MIL-STD-833, Class B Performance Ranges: SMJ44C256-80
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SMJ44C256
SGMS034C
MIL-STD-833,
SMJ44C256-80
SMJ44C256-10
SMJ44C256-12
SMJ44C256-15
512-Cycle
SMJ44C256
44C256
44c25680
SMJ44C256-10
SMJ44C256-12
SMJ44C256-15
SMJ44C256-80
44C256-80
44c256-12
44C256-10
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smd NE
Abstract: STK10C68 STK10C68-M 93056
Text: STK10C68-M STK10C68-M CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 FEATURES DESCRIPTION • 35, 45 and 55ns Access Times • 20 and 25ns Output Enable Access The Simtek STK10C68-M is a fast static RAM 35, 45 and 55ns , with a nonvolatile electrically-erasable PROM
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STK10C68-M
MIL-STD-833/SMD
STK10C68-M
STK10C68
300-mil
smd NE
93056
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NBXSPA008LN1TAG
Abstract: NBXSPA008LNHTAG
Text: NBXSPA008 2.5 V / 3.3 V, 161.1328 MHz LVDS Clock Oscillator The NBXSPA008 single frequency crystal oscillator XO is designed to meet today’s requirements for 2.5 V and 3.3 V LVDS clock generation applications. The device uses a high Q fundamental crystal and Phase Lock Loop (PLL) multiplier to provide
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NBXSPA008
1328MHz
NBXSPA008
NBXSPA008/D
NBXSPA008LN1TAG
NBXSPA008LNHTAG
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NBXDPA018LN1TAG
Abstract: NBXDPA018LNHTAG
Text: NBXDPA018 2.5 V / 3.3 V, 155.52 MHz / 311.04 MHz LVDS Clock Oscillator The NBXDPA018 dual frequency crystal oscillator XO is designed to meet today’s requirements for 2.5 V and 3.3 V LVDS clock generation applications. The device uses a high Q fundamental
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NBXDPA018
04MHz
NBXDPA018
848AB
NBXDPA018/D
NBXDPA018LN1TAG
NBXDPA018LNHTAG
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NBXDPA012LN1TAG
Abstract: NBXDPA012LNHTAG
Text: NBXDPA012 2.5 V / 3.3 V, 106.25 MHz / 212.5 MHz LVDS Clock Oscillator The NBXDPA012 dual frequency crystal oscillator XO is designed to meet today’s requirements for 2.5 V and 3.3 V LVDS clock generation applications. The device uses a high Q fundamental
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NBXDPA012
NBXDPA012
848AB
NBXDPA012/D
NBXDPA012LN1TAG
NBXDPA012LNHTAG
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smd 6x
Abstract: NBXDPA019LN1TAG NBXDPA019LNHTAG
Text: NBXDPA019 2.5 V / 3.3 V, 125 MHz / 250 MHz LVDS Clock Oscillator The NBXDPA019 dual frequency crystal oscillator XO is designed to meet today’s requirements for 2.5 V and 3.3 V LVDS clock generation applications. The device uses a high Q fundamental
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NBXDPA019
250MHz
NBXDPA019
848AB
NBXDPA019/D
smd 6x
NBXDPA019LN1TAG
NBXDPA019LNHTAG
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48 pin clcc footprint
Abstract: MIL-STD-833 NBXDPA017LNHTAG NBXDPA017LN1TAG NBXDPA017LUHTAG CLCC-48 footprint
Text: NBXDPA017 2.5 V / 3.3 V, 156.25 MHz / 312.5 MHz LVDS Clock Oscillator The NBXDPA017 dual frequency crystal oscillator XO is designed to meet today’s requirements for 2.5 V and 3.3 V LVDS clock generation applications. The device uses a high Q fundamental
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NBXDPA017
NBXDPA017
848AB
NBXDPA017/D
48 pin clcc footprint
MIL-STD-833
NBXDPA017LNHTAG
NBXDPA017LN1TAG
NBXDPA017LUHTAG
CLCC-48 footprint
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Untitled
Abstract: No abstract text available
Text: NBXSBA051 2.5/3.3 V, 533.33 MHz LVPECL Clock Oscillator The NBXSBA051, single frequency, crystal oscillator XO is designed to meet today’s requirements for 2.5/3.3 V LVPECL clock generation applications. The device uses a high Q fundamental crystal and Phase Lock Loop (PLL) multiplier to provide 533.33 MHz, ultra
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NBXSBA051
NBXSBA051,
NBXSBA051/D
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Untitled
Abstract: No abstract text available
Text: NBXSBA045 2.5/3.3 V, 345.00 MHz LVPECL Clock Oscillator The NBXSBA045, single frequency, crystal oscillator XO is designed to meet today’s requirements for 2.5/3.3 V LVPECL clock generation applications. The device uses a high Q fundamental crystal and Phase Lock Loop (PLL) multiplier to provide 345.00 MHz, ultra
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NBXSBA045
NBXSBA045,
NBXSBA045/D
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Untitled
Abstract: No abstract text available
Text: NBXSBA030 2.5 V / 3.3 V, 175.00 MHz LVPECL Clock Oscillator The NBXSBA030, single frequency, crystal oscillator XO is designed to meet today’s requirements for 2.5 V / 3.3 V LVPECL clock generation applications. The device uses a high Q fundamental crystal and Phase Lock Loop (PLL) multiplier to provide
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NBXSBA030
NBXSBA030,
NBXSBA030/D
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NBXSBA010LN1TAG
Abstract: NBXSBA010LNHTAG
Text: NBXSBA010 3.3 V, 100 MHz LVPECL Clock Oscillator The NBXSBA010, single frequency, crystal oscillator XO is designed to meet today’s requirements for 3.3 V LVPECL clock generation applications. The device uses a high Q fundamental crystal and Phase Lock Loop (PLL) multiplier to provide 100 MHz, ultra low
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NBXSBA010
NBXSBA010,
NBXSBA010/D
NBXSBA010LN1TAG
NBXSBA010LNHTAG
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44C256B
Abstract: 44C256
Text: SMJ44C256 262144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS034C - MAY 1989 - REVISED JUNE 1995 ! Organization . . . 262144 Words x 4 Bits Single 5-V Supply 10% Tolerance Processed to MIL-STD-833, Class B Performance Ranges: * • 3-State Unlatched Output
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OCR Scan
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SMJ44C256
262144-WORD
SGMS034C
MIL-STD-833,
SMJ44C256-80
SMJ44C256-10
SMJ44C256-12
SMJ44C256-15
20-Pln
300-Mil
44C256B
44C256
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44c256
Abstract: 3034C
Text: SMJ44C256 262144 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY _ SGMS034C - MAY 1989 - B E V ILO JUNE 1965 Organization. . . 262144 Words x 4 Bits Single 5-V Supply 10% Tolerance Processed to MIL-STD-833, Class B Performance Ranges: 3-State Unlatched Output
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OCR Scan
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SMJ44C256
SGMS034C
MIL-STD-833,
SMJ44C256-80
SMJ44C256-10
SMJ44C256-12
SMJ44C256-15
20-Pin
300-Mil
20-Lead
44c256
3034C
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Untitled
Abstract: No abstract text available
Text: HV570 P relim ina ry 64-Channel Serial To Parallel Converter With P-Channel Open Drain Controllable Output Current Ordering Information Package Options Device 80-Lead Quad Ceramic Gullwing 80 Lead Quad Plastic Gullwing Die 80 Lead Quad Ceramic Gullwing MIL-Std-833 Processed*
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OCR Scan
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HV570
64-Channel
80-Lead
MIL-Std-833
V57009DG
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PDF
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440-256
Abstract: 44C256-10
Text: SMJ44C256 262144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS034C - MAY 1989 - REVISED JUNE 1995 Organization. . . 262144 Words x 4 Bits Single 5-V Supply 10% Tolerance Processed to MIL-STD-833, Class B Performance Ranges: 3-State Unlatched Output Low Power Dissipation
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OCR Scan
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SMJ44C256
262144-WORD
SGMS034C
MIL-STD-833,
SMJ44C256-80
SMJ44C256-10
SMJ44C256-12
SMJ44C256-15
20-Pin
300-Mil
440-256
44C256-10
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STK10C68
Abstract: STK10C68-M qa1 smd
Text: STK10C68-M CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 SlfTÌTEH DESCRIPTION FEATURES 35, 45 and 55ns Access Times 15, 20 and 25ns Output Enable Access Unlimited Read and W rite to SRAM Hardware STORE Initiation
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OCR Scan
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STK10C68-M
MIL-STD-833/SMD
STK10C68-M
055V1
078X1
STK10C68
qa1 smd
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Untitled
Abstract: No abstract text available
Text: STK10C68-M CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 SimTEH FEATURES DESCRIPTION 3 0,3 5,45 and 55ns Access Times 15,20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Hardware STORE Initiation Automatic STORE Timing
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OCR Scan
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STK10C68-M
MIL-STD-833/SMD
STK10C68-M
STK10C68
28-pin
28-pad
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s8015
Abstract: No abstract text available
Text: SMJ44C256 2 62 144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS034A-MAY 1989-flEVISED FEBRUARY 1993 3-State Unlatched Output * - 55°C to 125°C Operating Free-Air Temperature Range Low Power Dissipation * Processed to MIL-STD-833, Class B Texas Instruments EPIC CMOS Process
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OCR Scan
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SMJ44C256
144-WORD
SGMS034A-MAY
1989-flEVISED
MIL-STD-833,
20-Pin
300-Mil
20-Lead
s8015
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stk 412 -420
Abstract: STK 419 - 150 STK 419 150 ic stk 412 -420 stk 412 420 STK 412 150 M STK 419- 150 20 pins ic stk 412 -420 m STK 412 150 M function stk 412 150
Text: STK10C68-M SlfïlTEH CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 FEATURES 35,45 and 55ns Access Times 20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Hardware STORE Initiation Automatic STORE Timing
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OCR Scan
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STK10C68-M
MIL-STD-833/SMD
STK10C68-M
STK10C68
28-pin
28-pad
300-m
stk 412 -420
STK 419 - 150
STK 419 150
ic stk 412 -420
stk 412 420
STK 412 150 M
STK 419- 150 20 pins
ic stk 412 -420 m
STK 412 150 M function
stk 412 150
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382e
Abstract: No abstract text available
Text: STK10C68-M SimTEH CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 FEATURES 30,35, 45 and 55ns Access Times 15,20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Hardware STORE Initiation Automatic STORE Timing
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OCR Scan
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STK10C68-M
MIL-STD-833/SMD
STK10C68-M
STK10C68
28-pin
28-pad
382e
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Untitled
Abstract: No abstract text available
Text: SN74CBT16212A 24-BIT FET BUS-EXCHANGE SWITCH SCDS0Q7K - NOVEMBER 1992 - REVISED MARCH 1998 5-Q Switch Connection Between Two Ports TTL-Compatible Input Levels Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds 2000 V Per MIL-STD-833, Method 3015; Exceeds 200 V
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OCR Scan
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SN74CBT16212A
24-BIT
MIL-STD-833,
300-mil
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s037a
Abstract: h58n
Text: SMJ44C250 262 144 BY 4-BIT MULTIPORT VIDEO RAM SGMS037B-JANUARY1991-REVISED FEBRUARY 1993 JD PACKAGE TOP VIEW • I * Military Operating Temperature Range . . . - 55°C to 125°C I * Processed to MIL-STD-833, Class B I • DRAM: 262 144 Words x 4 Bits SAM: 512 Words x 4 Bits
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OCR Scan
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SMJ44C250
SGMS037B-JANUARY1991-REVISED
MIL-STD-833,
SGMS037B-JANUARY
1991-REVISED
s037a
h58n
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PDF
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Untitled
Abstract: No abstract text available
Text: STK10C68-M CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 SimTEH FEATURES DESCRIPTION • 35,45 and 55ns Access Times • 20 and 25ns Output Enable Access The Simtek STK10C68-M is a fast static RAM 35, 45 and S5ns , with a nonvolatile electr'cally-erasable PROM
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OCR Scan
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STK10C68-M
MIL-STD-833/SMD
STK10C68-M
STK10C68
300-mil
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PDF
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Untitled
Abstract: No abstract text available
Text: böE D SINTEK CORP • ÖE74flfl7 00D03S0 33Ö H S I K STK10C68-M CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 SIIÏITEK FEATURES DESCRIPTION 3 0 ,3 5 ,4 5 and 55ns A c c e s s Tim es 1 5 ,2 0 and 25ns O u tp u t E nable A cce ss
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OCR Scan
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E74flfl7
00D03S0
STK10C68-M
MIL-STD-833/SMD
STK10C68-M
STK10C68
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