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    BCD8

    Abstract: 0.35uM STI BiCD 0.13 BCD6 LBC7 BiCD-0 LBC5 LBC7 RONA 0.35Um 0.18um LDMOS
    Text: A Deep Trench Isolation integrated in a 0.13um BiCD process technology for analog power ICs. H. Kitahara, T. Tsukihara, M. Sakai, J. Morioka*, K. Deguchi*, K. Yonemura*, T. Kikuchi*, S. Onoue*, K. Shirai*, K. Watanabe* and K. Kimura*. Toshiba Semiconductor Company, 3500 Matsuoka, Oita, Oita, 870-0197, Japan,


    Original     		PDF 7to30V BCD8 0.35uM STI BiCD 0.13 BCD6 LBC7 BiCD-0 LBC5 LBC7 RONA 0.35Um 0.18um LDMOS

    LBC7

    Abstract: BiCD 0.13 BCD8 0.18um LDMOS BCD8* riccardi cd013 BCD8 st 7to30V LBC7 RONA free transistor e2p
    Text: Ultra-low On-Resistance LDMOS Implementation in 0.13 m CD and BiCD Process Technologies for Analog Power IC's Koji Shirai, Koji Yonemura, Kiminori Watanabe, Koji Kimura System LSI Division, Toshiba Semiconductor Company, 2-5-1 Kasama, Sakae, Yokohama, Kanagawa/Japan,


    Original     		PDF 7to30V LBC7 BiCD 0.13 BCD8 0.18um LDMOS BCD8* riccardi cd013 BCD8 st LBC7 RONA free transistor e2p