Untitled
Abstract: No abstract text available
Text: LM2903PW Linear ICs Dual Voltage Comparator status Military/High-RelN Input Bias Current Max. A 250n t(resp) (S)300n V(io) Max. (V)7.0m I(io) Max. (A)50n Com Mode Inp Range (VICR)34 Volt Gain Min100Â Strobe Inp (Y/N)No P(D) Max. (W)525m Nom. Supp (V)5.0
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LM2903PW
Min100Ã
Code8-17
NumberLN00800017
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Untitled
Abstract: No abstract text available
Text: LM2903M Linear ICs Dual Voltage Comparator status Military/High-RelN Input Bias Current Max. A 250n t(resp) (S)1.3u V(io) Max. (V)7.0m I(io) Max. (A)50n Com Mode Inp Range (VICR)13.5ñ Volt Gain Min100Â Strobe Inp (Y/N)No P(D) Max. (W)600m Nom. Supp (V)15ñ
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LM2903M
Min100Ã
Code8-17
NumberLN00800017
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GU128X64-800B
Abstract: GU128x64 Vacuum Fluorescent Display NORITAKE ITRON VFD MODULES 128 x 64 "Graphic Display" vfd itron 128x64 128X64 character font table connector 26pin MIN20 vfd display japan
Text: RoHS 2002/95/EC Vacuum Fluorescent Display Module Specification Model: GU128X64-800B Specification No: DS-1239-0000-03 Date of Issue: May 19, 2005 Revision: May 1, 2006 December 20, 2007 January 23, 2008 : : PUBLISHED BY NORITAKE ITRON CORP. / JAPAN This specification is subject to change without prior notice.
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2002/95/EC
GU128X64-800B
DS-1239-0000-03
GU128X64-800B
GU128x64
Vacuum Fluorescent Display
NORITAKE ITRON VFD MODULES 128 x 64
"Graphic Display"
vfd itron 128x64
128X64 character font table
connector 26pin
MIN20
vfd display japan
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Abstract: No abstract text available
Text: 5082-2565 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandE-F Test Freq3.0G Frequency Min. (Hz)2.0G Frequency Max. (Hz)4.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0
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Min100
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Untitled
Abstract: No abstract text available
Text: 5082-2550 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS Test Freq3.0G Frequency Min. (Hz)2.0G Frequency Max. (Hz)6.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5
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Min100
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Untitled
Abstract: No abstract text available
Text: 5082-2520 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandE-F Test Freq3.0G Frequency Min. (Hz)2.0G Frequency Max. (Hz)4.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.0
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Min100
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Untitled
Abstract: No abstract text available
Text: 5082-2577 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandL Test Freq2.0G Frequency Min. (Hz)1.0G Frequency Max. (Hz)3.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)5.5
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Min100
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Untitled
Abstract: No abstract text available
Text: 5082-2566 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandE-F Test Freq3.0G Frequency Min. (Hz)2.0G Frequency Max. (Hz)4.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0
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Min100
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Untitled
Abstract: No abstract text available
Text: 5082-2553 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq3.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5 Maximum Conversion Loss (dB)
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Min100
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Untitled
Abstract: No abstract text available
Text: 5082-2551 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq3.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5 Maximum Conversion Loss (dB)
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Min100
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Untitled
Abstract: No abstract text available
Text: 5082-2296 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandA-J Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0
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Min100
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Untitled
Abstract: No abstract text available
Text: 5082-2554 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq3.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5 Maximum Conversion Loss (dB)
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Min100
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Untitled
Abstract: No abstract text available
Text: 5082-2785 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq9.4G Frequency Min. (Hz)1.0G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5
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Min100
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Untitled
Abstract: No abstract text available
Text: 5082-2295 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandA-J Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0
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Min100
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Abstract: No abstract text available
Text: SDM2210-011 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS-C Test Freq3.1G Frequency Min. (Hz)2.0G Frequency Max. (Hz)8.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)5.5
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SDM2210-011
Min100
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Untitled
Abstract: No abstract text available
Text: 5082-2580 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS-C Test Freq3.0G Frequency Min. (Hz)2.0G Frequency Max. (Hz)6.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0
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Min100
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Untitled
Abstract: No abstract text available
Text: 5082-2297 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandA-K Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5
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Min100
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Untitled
Abstract: No abstract text available
Text: 5082-2511 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS Test Freq3.0G Frequency Min. (Hz)500M Frequency Max. (Hz)6.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0
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Min100
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Untitled
Abstract: No abstract text available
Text: RoHS 2002/95/EC Vacuum Fluorescent Display Module Specification Model: GU128X32-800B Specification No: DS-1329-0000-01 Date of Issue: April 6, 2006 Revision: May 1, 2006 : : : : PUBLISHED BY NORITAKE ITRON CORP. / JAPAN This specification is subject to change without prior notice.
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2002/95/EC
GU128X32-800B
DS-1329-0000-01
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KC06
Abstract: TC58V16BFT
Text: TOSHIBA TC58V16BFT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X
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TC58V16BFT
TC58V16
264-byte,
264-byte
KC06
TC58V16BFT
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x135
Abstract: IN100
Text: CSSPD KB SERIES Disk Package • OUTLINE DIMENSIONS KB10N12, 14 ■ RATINGS Absolute Maximum Ratings Item Symbol ~~ ~ Conditions Type No. ~~— —-_ KB10N12 KB10N14 Unit Storage Temperature Tstg —4 0 ~ 1 25 "C Junction Temperature Tj 125 "C Vdkm Maximum Off-State Voltage
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KB10N12,
KB10N12
KB10N14
200//S
20//S
IN130
IN100
x135
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GM71C4400AJ/ALJ-80
Abstract: No abstract text available
Text: GMM7321000SG-60/70/80 1,048,576 WORDS x 32 BIT GoldStar GMM7322000SG-60/70/80 GOLDSTAR ELECTRON CO. LTD. 2,097,152 WORDS x 32 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM7321000SG is a 1M x 32 bits dynamic RAM MODULE which is assembled 8 pieces of
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GMM7321000SG-60/70/80
GMM7322000SG-60/70/80
GMM7321000SG
GMM7322000SG
MAX42
MIN100
MAX10
GM71C4400AJ/ALJ-80
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Untitled
Abstract: No abstract text available
Text: GoldStar GOLDSTAR ELECTRON CO., LTD. Description GMM7364000BS/BSG-60/70/80 4,194,304 WORDS x 36 BIT CMOS DYNAMIC RAM MODULE Features The GMM7364000BS/BSG is a 4M x36 Bits dy • 72 pins Single In-Line Package GMM736XXXXBS: Tin-Lead Plate namic RAM MODULE which is assembled 36
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GMM7364000BS/BSG-60/70/80
GMM7364000BS/BSG
GMM736XXXXBS:
GMM736XXXXBSG:
7364000BS/BSG
MIN100
DDD3T31
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kc04
Abstract: No abstract text available
Text: TOSHIBA TC58V16BFT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X
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TC58V16BFT
TC58V16
264-byte,
264-byte
kc04
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