Untitled
Abstract: No abstract text available
Text: LL4448 FAST SWITCHING SURFACE MOUNT DIODES POWER 100 Volts VOLTAGE 500 mW 0.063 1.6 • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction. • In compliance with EU RoHS 2002/95/EC directives
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LL4448
2002/95/EC
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: LL4448 FAST SWITCHING SURFACE MOUNT DIODES POWER 100 Volts VOLTAGE 500 mW MECHANICAL DATA 0.063 1.6 • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction. • Lead free in comply with EU RoHS 2002/95/EC directives
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LL4448
2002/95/EC
MIL-STD-750,
2012-REV
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MINI-MELF DIODE marking 3
Abstract: LL4448 ll-34 diode
Text: LL4448 FAST SWITCHING SURFACE MOUNT DIODES 500 mW POWER 100 Volts VOLTAGE MINI-MELF/LL-34 Unit : inch mm .063(1.6) • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction. • In compliance with EU RoHS 2002/95/EC directives
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LL4448
MINI-MELF/LL-34
2002/95/EC
MIL-STD-750,
MINI-MELF DIODE marking 3
LL4448
ll-34 diode
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Untitled
Abstract: No abstract text available
Text: LL103A / 103B / 103C VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Applications 94 9371 HF-Detector
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LL103A
OD-80)
LL103B
LL103C
D-74025
09-Mar-04
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Untitled
Abstract: No abstract text available
Text: WILLAS MM4148,MM4448 Mini Melf Switching diode Features D Electrical data identical with the devices 1N4148 and 1N4448 respectively D Weight:0.03g SCS501V VOLTAGE 40V 0.1AMP Schottky Barrier Rectifiers Applications Extreme fast switches Pb Free Product S SOD-323 SC-76
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1N4148
1N4448
MM4148
MM4448
OD-323
SC-76)
MIL-STD-75oltage
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PDF
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marking ll4148
Abstract: No abstract text available
Text: DATA SHEET LL4448 FAST SWITCHING SURFACE MOUNT DIODES POWER 75 Volts VOLTAGE MINI-MELF/LL-34 Unit : inch mm 500 mW MECHANICAL DATA .063(1.6) • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction.
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LL4448
MINI-MELF/LL-34
MIL-STD-202G,
100kHz
marking ll4148
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125OC
Abstract: LL4150
Text: LL4150 FAST SWITCHING SURFACE MOUNT DIODES POWER 50 Volts VOLTAGE 500 mWatts MINI-MELF/LL-34 Unit : inch mm FEATURES .063(1.6) MECHANICAL DATA • Case: Mini Melf, Glass • Terminals: Solderable per MIL-STD-750, Method 2026 • Polarity: Cathode Band • Marking: Cathode Band Only
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LL4150
MINI-MELF/LL-34
MIL-STD-750,
2002/95/EC
125OC
LL4150
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PDF
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Untitled
Abstract: No abstract text available
Text: LL4150 FAST SWITCHING SURFACE MOUNT DIODES POWER 50 Volts VOLTAGE 500 mWatts MINI-MELF/LL-34 Unit : inch mm FEATURES .063(1.6) MECHANICAL DATA • Case: Mini Melf, Glass • Terminals: Solderable per MIL-STD-750, Method 2026 • Polarity: Cathode Band • Marking: Cathode Band Only
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LL4150
MINI-MELF/LL-34
MIL-STD-750,
2002/95/EC
CHAR00
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c12V Zener Diode
Abstract: Zener c10v c36v C82V c24v C91V c51v c18v
Text: ZMM55Cxxx SERIES Surface Mount Zener Diode Cathode Band .063 1.6 .055(1.4 .020(0.5) .012(0.3) .146(3.7) .130(3.3) MINI MELF Dimensions in inches and (millimeters) FEATURES MECHANICAL DATA •Planar Die construction • Case: Molded Glass MINI-MELF • 500mW Power Dissipation
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ZMM55Cxxx
500mW
2002/95/EC
MIL-STD-750,
c12V Zener Diode
Zener c10v
c36v
C82V
c24v
C91V
c51v
c18v
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SOD80 diode Marking Code AA
Abstract: Schottky DIODE LL41 LL41-GS18
Text: LL41 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. • This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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DO-35
BAT41.
OD-80)
LL41-GS18
LL41-GS08
D-74025
16-Dec-03
SOD80 diode Marking Code AA
Schottky DIODE LL41
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BAT46
Abstract: BAT46W LL46 general semiconductor DIODE SOD80
Text: LL46 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.
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DO-35
BAT46
OD-123
BAT46W.
OD-80)
LL46-GS18
LL46-GS08
D-74025
18-Nov-03
BAT46W
LL46
general semiconductor DIODE SOD80
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bat48 sod-80
Abstract: DIODE bat48 BAT48 LL48 general semiconductor DIODE SOD80
Text: LL48 VISHAY Vishay Semiconductors Schottky Diode, Reverse Voltage 40 V, Forward Current 350 mA Features • For general purpose applications • This diode features very low turn-on voltage and high break-down voltage. • This devices are protected by a PN junction guard
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DO-35
BAT48.
OD-80)
LL48-GS18
LL48-GS08
D-74025
09-Mar-04
bat48 sod-80
DIODE bat48
BAT48
LL48
general semiconductor DIODE SOD80
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Untitled
Abstract: No abstract text available
Text: DL5221B SERIES VOLTAGE - 2.4 to 75 Volts POWER - 500 mWatts SURFACE MOUNT ZENER DIODE MINI MELF DL-35 FEATURES ● Planar Die Construction ● 500mW Power Dissipation ● Ideally Suited for Automated Assembly Processes MECHANICAL DATA ● Case: Molded Glass MINI-MELF
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DL5221B
DL-35)
500mW
MIL-STD-202E,
-65to
DL5262B
DL5263B
DL5264B
DL5265B
DL5266B
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5247 soic-8
Abstract: No abstract text available
Text: DL5221B SERIES VOLTAGE - 2.4 to 75 Volts POWER - 500 mWatts SURFACE MOUNT ZENER DIODE MINI MELF LL-34 FEATURES ● Planar Die Construction ● 500mW Power Dissipation ● Ideally Suited for Automated Assembly Processes MECHANICAL DATA ● Case: Molded Glass MINI-MELF
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DL5221B
LL-34)
500mW
MIL-STD-202E,
-65to
DL5262B
DL5263B
DL5264B
DL5265B
DL5266B
5247 soic-8
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101C
Abstract: 101B LL101 LL101A SD101A SD101AW SD101BW SD101CW
Text: LL101A / 101B / 101C VISHAY Vishay Semiconductors Schottky Diodes Features • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching
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LL101A
LL101
DO-35
SD101A,
OD123
SD101AW,
SD101BW,
SD101CW.
D-74025
14-Jan-03
101C
101B
SD101A
SD101AW
SD101BW
SD101CW
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Untitled
Abstract: No abstract text available
Text: BAS86 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic
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BAS86
DO-35
BAT86.
OD-80)
D-74025
03-Feb-04
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PDF
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SOD80 diode Marking Code AA
Abstract: general semiconductor DIODE SOD80
Text: BAS86 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic
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BAS86
DO-35
BAT86.
OD-80)
D-74025
11-Mar-04
SOD80 diode Marking Code AA
general semiconductor DIODE SOD80
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Untitled
Abstract: No abstract text available
Text: LL5711 and LL6263 VISHAY Vishay Semiconductors Schottky Diodes Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching
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LL5711
LL6263
DO-35
1N5711
1N6263.
OD-80)
LL6263
LL5711-GSake
D-74025
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Untitled
Abstract: No abstract text available
Text: BAS85 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diode Features • For general purpose applications • This diode features low turn-on voltage. • The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAS85
DO-35
BAT85.
OD-80)
BAS85
BAS85-GS18
BAS85-GS08
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: LL48 VISHAY Vishay Semiconductors Schottky Diode, Reverse Voltage 40 V, Forward Current 350 mA Features • For general purpose applications • This diode features very low turn-on voltage and high break-down voltage. • This devices are protected by a PN junction guard
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DO-35
BAT48.
OD-80)
LL48-GS18
LL48-GS08
08-Apr-05
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1N5711
Abstract: 1N6263 LL5711 LL5711-GS08 LL6263 LL6263-GS18 VISHAY MARKING Melf
Text: LL5711 and LL6263 VISHAY Vishay Semiconductors Schottky Diodes Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching
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LL5711
LL6263
DO-35
1N5711
1N6263.
OD-80)
D-74025
18-Nov-03
1N6263
LL5711-GS08
LL6263
LL6263-GS18
VISHAY MARKING Melf
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LL48GS08
Abstract: No abstract text available
Text: LL48 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as
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DO-35
BAT42
BAT43
OD-123
BAT42W
BAT43W.
OD-80)
LL48-GS18
LL48-GS08
D-74025
LL48GS08
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Untitled
Abstract: No abstract text available
Text: LL42 / LL43 VISHAY Vishay Semiconductors Schottky Diodes Features • For general purpose applications • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as
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DO-35
BAT42
BAT43
OD-123
BAT42W
BAT43W.
OD-80)
LL42-GS18
LL42-GS08
LL43-GS18
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Untitled
Abstract: No abstract text available
Text: BAS86 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic
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BAS86
DO-35
BAT86.
OD-80)
08-Apr-05
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PDF
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