UC1637
Abstract: No abstract text available
Text: Mintech Semiconductors Ltd 2 Hellesdon Park Road Drayton High Road Norwich Norfolk NR6 5DR England Tel +44 0 1603 788967 Fax +44(0)1603 788920 Email sales@mintech.co.uk Web www.mintech.co.uk 18 17 15 14 13 PAD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
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UC1637
CF0012
UC1637
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DUL1506
Abstract: DUL1506-AG DUL1506AL DUL1506ALN DUL1506-GG DUL1506S silicon carbide
Text: August 2009 DUL1506 – 600V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the
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DUL1506
DUL1506
DUL1506-AG
DUL1506AL
DUL1506ALN
DUL1506-GG
DUL1506S
silicon carbide
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DUL1504
Abstract: DUL1504-AG DUL1504AL DUL1504ALN DUL1504-GG DUL1504S
Text: August 2009 DUL1504 – 400V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the
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DUL1504
DUL1504
DUL1504-AG
DUL1504AL
DUL1504ALN
DUL1504-GG
DUL1504S
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DUT1508AL
Abstract: DUT1508ALN DUT1508-GG DUT1508S DUT1508 DUT1508-AG
Text: August 2009 DUT1508 – 800V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the
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DUT1508
DUT1508
DUT1508AL
DUT1508ALN
DUT1508-GG
DUT1508S
DUT1508-AG
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DUT1507
Abstract: DUT1507-AG DUT1507AL DUT1507ALN DUT1507-GG DUT1507S to-276ab CLIFTON
Text: August 2009 DUT1507 – 700V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the
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DUT1507
DUT1507
DUT1507-AG
DUT1507AL
DUT1507ALN
DUT1507-GG
DUT1507S
to-276ab
CLIFTON
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Mintech Semiconductors
Abstract: M128S32
Text: M128S32 128K x 32 Fast SRAM Issue 1.0 July 2003 General Description Features The M128S32 is a high reliability 4Mbit fast static ram housed in high temperature co-fired ceramic. Access times are 20, 25 or 35ns, with 15 & 17ns in development. For surface mount applications there
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M128S32
M128S32
128Kx32
256Kx16
512Kx8.
M128S32GAMB-xxx
M128S32P-xxx
M128S32PI-xxx
M128S32PM-xxx
M128S32PMB-xxx
Mintech Semiconductors
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DUL1505
Abstract: DUL1505-AG DUL1505AL DUL1505ALN DUL1505-GG DUL1505S
Text: August 2009 DUL1505 – 500V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the
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DUL1505
DUL1505
DUL1505-AG
DUL1505AL
DUL1505ALN
DUL1505-GG
DUL1505S
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DUT1506
Abstract: DUT-1506 DUT1506-AG DUT1506AL DUT1506ALN DUT1506-GG DUT1506S DUT-15
Text: August 2009 DUT1506 – 600V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the
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DUT1506
DUT1506
DUT-1506
DUT1506-AG
DUT1506AL
DUT1506ALN
DUT1506-GG
DUT1506S
DUT-15
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DUT1505
Abstract: DUT1505-AG DUT1505AL DUT1505ALN DUT1505-GG DUT1505S silicon carbide
Text: August 2009 DUT1505 – 500V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the
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DUT1505
DUT1505
DUT1505-AG
DUT1505AL
DUT1505ALN
DUT1505-GG
DUT1505S
silicon carbide
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Mintech Semiconductors
Abstract: M128 D28A0 M128E32 M128E32G-
Text: M128E32 128K x 32 EEPROM Issue 2.0 June 2004 General Description Features 4 Megabit EEPROM module. Access Times of 120/150/200 ns. Output Configurable as 32/ 16/ 8 bit wide. Upgradeable footprint Operating Power 1600/ 830/ 445 mW Max . Low Power Standby 2.2 mW (Max).
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M128E32
M128E32
200ns.
128Kx32bits
256Kx16
51Kx8.
MIL-STD-883
Mintech Semiconductors
M128
D28A0
M128E32G-
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mintech
Abstract: No abstract text available
Text: M512S32 512K x 32 Fast SRAM Issue 2.0 July 2004 General Description Features The M512S32 is a hi-rel grade16Mbit fast Static RAM multichip module, that is normally organised as 512Kx32 bits wide , but can also be user configured as 1Mx16 or 2Mx8. Access times are available as 20,
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M512S32
M512S32
grade16Mbit
512Kx32
1Mx16
MIL-STD-883
15/17ns
mintech
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Untitled
Abstract: No abstract text available
Text: MP1000VS32JC 1M x 32 Fast SRAM PLCC Issue 1.0 December 2005 General Description Features The MP1000VS32JC device is a 1M x 32 SRAM module housed in a 68 Jleaded package which complies with the JEDEC 68 PLCC standard. Access times of 12, 15 or 20 ns are available. The 3V device is
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MP1000VS32JC
MP1000VS32JC
435mton
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SST511
Abstract: No abstract text available
Text: SST511 Linear Systems replaces discontinued Siliconix SST511 Current Regulator Diode — POV min 45 V Features: Description: Surface-Mount Package Guaranteed ±20% Tolerance POV (min) 45V Good Temperature Stability The SST511 belongs to a family of ±20% range current
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SST511
SST511
OT-23
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LM358 RF receiver module
Abstract: DS26C31T light sensor lm324 and lm339 in circuit functions light sensor in lm324 and lm339 LM324 temperature controller LM386-1 LM723 LMX2336 detonators functions light sensor in lm324
Text: N VOLUME NO. 5 2000 THE PROLIFERATION OF DIE PRODUCTS COMMUNICATION SYSTEMS he trend in the electronics industry is toward smaller and lighter with higher performance. Fueling this trend is continuing silicon integration as well as advanced packaging technologies. The ultimate "packaging" technology in terms of supporting
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2SK170BL
Abstract: 2SK508 tcxo philips 4322 BFG135 power amplifier for 900Mhz 2SK147BL 2sk162 hitachi 2sk170y toshiba 2sk170bl BF1009SW philips rf manual
Text: 4th edition RF Manual product & design manual for RF small signal discretes Page: 1 Philips RF Manual product & design manual for RF small signal discretes 4 edition March 2004 th / discretes/documentation/rf_manual
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BF1107/8
BGA2715-17
BGA6x89
2SK170BL
2SK508
tcxo philips 4322
BFG135 power amplifier for 900Mhz
2SK147BL
2sk162 hitachi
2sk170y
toshiba 2sk170bl
BF1009SW
philips rf manual
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LM6462
Abstract: LF411 "direct replacement" LH0032ACG LM6464 LM646 VARIABLE POWER SUPPLY. 0 - 30V, LM723 LM35,3 sensor vhdl 4-bit binary calculator ADC1231 lm2940-8
Text: N Military/Aerospace Division Product Line Card 1997 N www.national.com/appinfo/milaero/ Table of Contents At National Semiconductor , it’s about innovation. One of the largest suppliers of IC products for high reliability applications, we’ve provided analog and mixedsignal engineering for the Military/Aerospace market for more than 30 years. Our expertise in system design and
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