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    MIP4 Price and Stock

    Lascar Electronics SGD 24-M-IP420

    2.4" WATERPROOF PROG 4-20MA
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    DigiKey SGD 24-M-IP420 Box 1
    • 1 $261.99
    • 10 $261.99
    • 100 $261.99
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    Newark SGD 24-M-IP420 Bulk 1
    • 1 $261.99
    • 10 $261.99
    • 100 $261.99
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    RS SGD 24-M-IP420 Bulk 1 1
    • 1 $272.47
    • 10 $258.85
    • 100 $231.6
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    TME SGD 24-M-IP420 2 1
    • 1 $218.9
    • 10 $205.85
    • 100 $205.85
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    Micro Commercial Components MIP40R12E1TN-BP

    IGBT MODULES
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    DigiKey MIP40R12E1TN-BP Reel 8
    • 1 -
    • 10 $103.21375
    • 100 $88.56375
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    Mouser Electronics MIP40R12E1TN-BP
    • 1 -
    • 10 $94.21
    • 100 $87.89
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    Omega Engineering OM-SGD-24-M-IP420

    SMART GRAPHICS PROCESS METERS - Bulk (Alt: OM-SGD-24-M-IP420)
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    Avnet Americas OM-SGD-24-M-IP420 Bulk 5
    • 1 $371.7336
    • 10 $371.7336
    • 100 $371.7336
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    Newark OM-SGD-24-M-IP420 Bulk 11 1
    • 1 $371.73
    • 10 $371.73
    • 100 $371.73
    • 1000 $371.73
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    Smart Cable Company MIP4S08GWGSB-001

    (Alt: MIP4S08GWGSB-001)
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    Avnet Americas MIP4S08GWGSB-001 12 Weeks 100
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    Printronix MIP480-KA

    BLK RIBBON CARTRIDGE F/ MIP480
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    NAC MIP480-KA 1
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    Find more MIP4 price and stock on Findchips.com

    MIP4 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MIP403 Panasonic Silicon MOS IC Scan PDF
    MIP40DE MAZeT Analog Interpolator Original PDF
    MIP40DR MAZeT Analog Interpolator Original PDF
    MIP40N MAZeT Analog Interpolator Original PDF

    MIP4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MIP414

    Abstract: MIP414MD
    Text: Intelligent Power Devices IPDs MIP4140MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


    Original     		PDF MIP4140MD O-220IPD7-A2 MIP414MD MMIP811/812 MMIP814/815/816 MIP82£ MIP55£ MIP414 MIP414MD

    MIP417MD

    Abstract: TO-220IPD7-A2 mip41 MIP16
    Text: Intelligent Power Devices IPDs MIP4170MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


    Original     		PDF MIP4170MD O-220IPD7-A2 MIP417MD MIP811/812 MIP814/815/816 MIP82£ MIP55£ MIP417MD TO-220IPD7-A2 mip41 MIP16

    MIP414MD

    Abstract: MIP414 MIP4140md
    Text: Intelligent Power Devices IPDs MIP4140MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


    Original     		PDF MIP4140MD O-220IPD7-A2 MIP414MD MIP811/812 MIP814/815/816 MIP82£ MIP55£ MIP414MD MIP414 MIP4140md

    MIP414MD

    Abstract: MIP414 MIP4140MD mip41 mip4140 MIP9E mip9l TO-220IPD7-A2 MIP803 MIP55
    Text: Intelligent Power Devices IPDs MIP4140MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


    Original     		PDF MIP4140MD O-220IPD7-A2 MIP414MD MIP803/804 MIP816/826 MIP51£ MIP55£ MIP50£ MIP414MD MIP414 MIP4140MD mip41 mip4140 MIP9E mip9l TO-220IPD7-A2 MIP803 MIP55

    MIP417MD

    Abstract: MIP417 mip417m
    Text: Intelligent Power Devices IPDs MIP4170MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


    Original     		PDF MIP4170MD O-220IPD7-A2 MIP417MD MMIP811/812 MMIP814/815/816 MIP82£ MIP55£ MIP417MD MIP417 mip417m

    MIP4110

    Abstract: mip411 MIP414 MIP2E3D mip41 MIP4150MD MIP4140MS mip418 MIP4110MS MIP4120
    Text: Low noise from electric components and energy-saving at standby mode IPD Series for Quasi-resonant Power Supply MIP41X Series „ Overview This IPD (Intelligent Power Device) has been developed for switching power supplies, which adopts RCC quasi-resonant control


    Original     		PDF MIP41X MIP41 MIP4110 mip411 MIP414 MIP2E3D mip41 MIP4150MD MIP4140MS mip418 MIP4110MS MIP4120

    MIP414MD

    Abstract: MIP4140MD MIP41
    Text: Intelligent Power Devices IPDs MIP4140MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


    Original     		PDF MIP4140MD O-220IPD7-A2 MIP414MD artificP01* MIP00* MIP55* MIP816/826 MIP50* MIP02* MIP52* MIP414MD MIP4140MD MIP41

    MIP417MD

    Abstract: MIP4170MD mip417m Secondary Regulator for VTR
    Text: Intelligent Power Devices IPDs MIP4170MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


    Original     		PDF MIP4170MD O-220IPD7-A2 MIP417MD artificP01* MIP00* MIP55* MIP816/826 MIP50* MIP02* MIP52* MIP417MD MIP4170MD mip417m Secondary Regulator for VTR

    MIP417MD

    Abstract: mip41 MIP4170MD MIP417 TO-220IPD7-A2 mip9l MIP55 SLB00097AED
    Text: Intelligent Power Devices IPDs MIP4170MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


    Original     		PDF MIP4170MD O-220IPD7-A2 MIP417MD MIP803/804 MIP816/826 MIP51£ MIP55£ MIP50£ MIP417MD mip41 MIP4170MD MIP417 TO-220IPD7-A2 mip9l MIP55 SLB00097AED

    MIP004

    Abstract: No abstract text available
    Text: MIP0040MS Type Silicon MOSFET type Integrated Circuit Application For Switching Power Supply Control Structure CMOS type Equivalent Circuit Figure 8 Out Line DIP7-A1 Marking MIP004 A. ABSOLUTE MAXIMUM RATINGS Ta= 25°C±3°C No. 1 Item Ratings Unit VIN –0.3 to 500


    Original     		PDF MIP0040MS MIP004 MIP01* MIP02* MIP00* MIP55* MIP816/826 MIP52* MIP56* MIP53* MIP004

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    Untitled

    Abstract: No abstract text available
    Text: MIP106 Intelligent Power Devices IPDs MIP106 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 Single chip IC of protection function circuit


    Original     		PDF MIP106 MIP13Â MIP14Â MIP15Â MIP16Â MIP17Â MIP18Â MIP01Â MIP02Â

    Untitled

    Abstract: No abstract text available
    Text: Intel Ethernet Connection I217 Datasheet v2.3 Product Features  General — 10 BASE-T IEEE 802.3 specification conformance — 100 BASE-TX IEEE 802.3 specification conformance — 1000 BASE-T IEEE 802.3 specification conformance — Energy Efficient Ethernet EEE IEEE


    Original     		PDF

    MS 7541 MOTHERBOARD SERVICE MANUAL

    Abstract: foxconn ls 36 motherboard manual FoxConn JFM38U1A foxconn LS 36 motherboard diagram
    Text: Intel Ethernet Connection I218 Datasheet v2.3 Product Features  General — 10 BASE-T IEEE 802.3 specification conformance — 100 BASE-TX IEEE 802.3 specification conformance — 1000 BASE-T IEEE 802.3 specification conformance Energy Efficient Ethernet


    Original     		PDF

    MIP9E01

    Abstract: MIP9E02 MIP709 ipd mip2 ipd mip4
    Text: Intelligent Power Devices IPDs MIP704 Silicon MOS IC • Features ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply


    Original     		PDF MIP704 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 MIP9E02 MIP709 ipd mip2 ipd mip4

    MIP9E01

    Abstract: mip10 Matsua & SAW & IF matsua saw MIP108 4.5V TO 100V INPUT REGULATOR
    Text: MIP108 Intelligent Power Devices IPDs MIP108 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 1.27 Single chip IC of protection circuit


    Original     		PDF MIP108 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 mip10 Matsua & SAW & IF matsua saw MIP108 4.5V TO 100V INPUT REGULATOR

    Matsua de

    Abstract: MIP9E01 4.5V TO 100V INPUT REGULATOR
    Text: MIP106 Intelligent Power Devices IPDs MIP106 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 ● Single chip IC of protection function circuit


    Original     		PDF MIP106 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 Matsua de MIP9E01 4.5V TO 100V INPUT REGULATOR

    MIP9E01

    Abstract: MIP9E02 MIP805 MIP709
    Text: Intelligent Power Devices IPDs MIP705 Silicon MOS IC Unit: mm • Applications • For automotive electric equipment (relay or solenoid driver) 0.5±0.1 0.8 max. 1.8±0.1 2.5±0.1 7.3±0.1 • 3-pin intelligent power device • Five protective functions (over-current, over-voltage, load-shorting, over heat, ESD) built-in


    Original     		PDF MIP705 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 MIP9E02 MIP709

    MIP9E01

    Abstract: MIP0122SY MIP9E02 TO-220-A1 MIP0123SY MIP0125SY MIP816 MIP0123 matsua CHARGER ipd mip2
    Text: Intelligent Power Devices IPDs MIP0122SY, MIP0123SY, MIP0124SY, MIP0125SY Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.


    Original     		PDF MIP0122SY, MIP0123SY, MIP0124SY, MIP0125SY MIP0122SY MIP0123SY MIP0124SY MIP0125SY MIP10£ MIP811/812 MIP9E01 MIP9E02 TO-220-A1 MIP816 MIP0123 matsua CHARGER ipd mip2

    MIP9E01

    Abstract: MIP9E02 MIP9E ipd mip2 ipd mip4
    Text: Intelligent Power Devices IPDs MIP504 Silicon MOS IC • Features unit: mm ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply


    Original     		PDF MIP504 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 MIP9E02 MIP9E ipd mip2 ipd mip4

    mip160

    Abstract: MIP162 mip163 MIP164 MIP166 MIP2 MIP165 mip*163 MIP9E
    Text: Intelligent Power Devices IPDs MIP160, MIP162, MIP163, MIP164, MIP165, MIP166 Silicon MOS IC • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V)


    Original     		PDF MIP160, MIP162, MIP163, MIP164, MIP165, MIP166 MIP13£ MIP14£ MIP15£ MIP16£ mip160 MIP162 mip163 MIP164 MIP166 MIP2 MIP165 mip*163 MIP9E

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Intelligent Power Devices IPDs MIP403(Tentative) Silicon MOS IC Unit : mm • Features • High breakdown voltage N-Ch MOS FET built-in (V dss > 400V) • Over-current, over input voltage, and over output voltage protective functions built-in • For the power supply of a half-wave or of full-wave rectification of


    OCR Scan     		PDF MIP403

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Intelligent Power Devices IPDs MIP403(Tentative) Silicon MOS IC Unit : mm • Features • High breakdown voltage N-Ch MOS FET built-in (V dss > 400V ) • Over-current, over input voltage, and over output voltage protective functions built-in


    OCR Scan     		PDF MIP403

    "Intelligent Power Devices"

    Abstract: mos n fet e MIP403
    Text: Panasonic Intelligent Power D ev ices IPDs MIP403(Tentative) S ilicon M O S IC U n it : m m • Features • High breakdown voltage N-Ch MOS FET built-in (V d s s > 4 0 0 V ) • Over-current, over input voltage, and over output voltage protective functions built-in


    OCR Scan     		PDF MIP403 "Intelligent Power Devices" mos n fet e