Contextual Info: Panasonic Intelligent Power Devices IPDs MIP501, MIP502 Silicon M OS IC • Features • High breakdown voltage, N-Ch MOS FET output (Voss > 40V Ron < 0.5il) • Over-current-protection function built-in • Reset function built-in • Direct drive possible by the logic circuit

MIP16

Abstract: mip02 MIP2 MIP501 MIP502 MIP55
Contextual Info: MIP501, MIP502 Intelligent Power Devices IPDs MIP501, MIP502 Silicon MOS IC MIP501 (V DSS > 40V Ron < 0.5Ω) Over-current-protection function built-in 4.5±0.2 0.65±0.1 0.85±0.1 Direct drive possible by the logic circuit • Applications ● 0.65±0.1

HT 10

Contextual Info: MIP501, MIP502 Intelligent Power Devices IPDs MIP501, MIP502 Silicon MOS IC MIP501 (V DSS > 40V Ron < 0.5Ω) ● Over-current-protection function built-in ● Reset function built-in 4.5±0.2 Unit : mm 90° 0.65±0.1 0.85±0.1 1.0±0.1 0.8C 0.8C 0.65±0.1

Intelligent Power Devices

Abstract: panasonic fc 10 "Intelligent Power Devices"
Contextual Info: Panasonic Intelligent Power Devices IPDs MIP501, MIP502 Silicon M OS IC Unit : rmn • Features • High breakdown voltage, N-Ch MOS FET output (V d s s > 40V Ron < 0.5£2) • Over-current-protection function built-in • Reset function built-in • Direct drive possible by the logic circuit

Contextual Info: MIP501, MIP502 Intelligent Power Devices IPDs MIP501, MIP502 Silicon MOS IC MIP501 (V DSS > 40V Ron < 0.5Ω) ● Over-current-protection function built-in ● Reset function built-in 4.5±0.2 Unit : mm 90° 0.65±0.1 0.85±0.1 1.0±0.1 0.8C 0.8C 0.65±0.1

"Intelligent Power Devices"

Abstract: Intelligent Power Devices MIP501 MIP502
Contextual Info: MIP501, MIP502 Intelligent Power Devices IPDs MIP501, MIP502 Silicon MOS IC MIP501 (V DSS > 40V Ron < 0.5Ω) ● Over-current-protection function built-in ● Reset function built-in 4.5±0.2 Unit : mm 90° 0.65±0.1 0.85±0.1 1.0±0.1 0.8C 0.8C 0.65±0.1

"Intelligent Power Devices"

Abstract: MIP501 MIP502
Contextual Info: MIP501, MIP502 Intelligent Power Devices IPDs MIP501, MIP502 Silicon MOS IC MIP501 (V DSS > 40V Ron < 0.5Ω) ● Over-current-protection function built-in ● Reset function built-in 4.5±0.2 Unit : mm 90° 0.65±0.1 0.85±0.1 1.0±0.1 0.8C 0.8C 0.65±0.1

"Intelligent Power Devices"

Abstract: Intelligent Power Devices MIP501 MIP502
Contextual Info: Panasonic Intelligent Power Devices IPDs M IP 5 0 1 , M IP502 Silicon M OS IC Unit : mm • Features • High breakdown voltage, N-Ch MOS FET output (V dss > 40V Ron < 0.5 il) • Over-current-protection function built-in • Reset function built-in • Direct drive possible by the logic circuit

MIP504

Abstract: TO-92NL TO92NL 3sk287 3SK282 "Intelligent Power Device"
Contextual Info: FET, IGBT, IPD • IPDs Intelligent Power Device (continued) Application Output Breakdown Input Voltage Voltage Type No. V Non-insulation A M IP 4 0 3 type power supply Packa ge Output MOS FET Features 25mA (at 5V) • O v e r cu rre n t protection built-in

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

3sk287

Abstract: 3sk272 2SK690 "Intelligent Power Device"
Contextual Info: Field Effect Transistors • IPD Intelligent Power Device (continued) Application Output Breakdown Voltage Type No. EL Driver MIP803 Application Type No. Output MOS FET Vcc VDSS Id 1.5 -3 .5 V 200V 15/70mA Input Voltage VlN Output Breakdown Voltage Package