Untitled
Abstract: No abstract text available
Text: M ITSUBISHKM ICM PTR/M IPR C M37428M4-XXXFP LIE J J> bSMTflSfl DD173S3 ÔD3 • f1I T4 MITSUBISHI SINGLE-CHIP 8 bit MICROCOMPUTERS M37428M4-XXXFP SINGLE-CHIP 8-bit MICROCONTROLLER PRELIMINARY SPECIFICATIONS April 1991 Rev. D MITSUBISHI ELECTRONICS AMERICA, INC.
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M37428M4-XXXFP
DD173S3
M37428RFS/M37428M4-XXXFP
M37428M4-XXXFP
80-pt
P31/Xcin
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"SERIES MELPS 740"
Abstract: MELPS740 M3742 80P6N M37428RFS MELPS 740 MELPS-740 mcl plp cd controller M37428
Text: M ITSUBISHKM ICM PTR/M IPR C M37428M4-XXXFP LIE J J> bSMTflSfl DD173S3 ÔD3 • f1I T4 MITSUBISHI SINGLE-CHIP 8 bit MICROCOMPUTERS M37428M4-XXXFP SINGLE-CHIP 8-bit MICROCONTROLLER PRELIMINARY SPECIFICATIONS April 1991 Rev. D MITSUBISHI ELECTRONICS AMERICA, INC.
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b24Tfl2fl
DD173S3
M37428M4-XXXFP
M37428M4-XXXFP
M37428RFS/M37428M4-XXXFP
80-pin
M37428RFS
P31/Xcin
"SERIES MELPS 740"
MELPS740
M3742
80P6N
MELPS 740
MELPS-740
mcl plp
cd controller
M37428
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Untitled
Abstract: No abstract text available
Text: LIE D • bEMTf l SS 0 0 2 D5 MS 3 m M MITSUBISHI H 2 M ■ M IT I 3 2 E J MITSUBISHI LSIs , S E J - 6 , - 7 , - 8 , - 1 PI Ef lORY/ASI C FAST PAGE MODE 2097152-WORD BY 32-BIT DYNAMIC RAM DESCRIPTION The M H 2M 32E J, SEJ is 2 0 9 7 1 5 2 w ord x 3 2 b it dynamic
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2097152-WORD
32-BIT
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30UMH-06 HIGH-SPEED SWITCHING USE FS30UMH-06 OUTLINE DRAWING Dimensions in mm 4.5 , , 10.5MAX. r J 1.3 •—T O' M \ ó 3.6 j - , - P0 0.8 2.54 0.5 T • 2.5V DRIVE • VDSS .
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FS30UMH-06
30mi2
O-220
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Untitled
Abstract: No abstract text available
Text: bl E bEMTflSS D OOEGMb? DT4 • M I T I MITSUBISHI LSIs MH1M09A0AJ - 6, - 7, - 8, -10/ MH1M09A0AJA- 6, - 7, - 8, -10 FAST PAGE MODE 1048576-WORD BY 9 - BIT DYNAMIC RAM MITSUBISHI MEMORY/ASIC DESCRIPTIO N The MH1M09A0AJ, J A is 1048576-word x 9- bit dynamic
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MH1M09A0AJ
MH1M09A0AJA-
1048576-WORD
MH1M09A0AJ,
MH1M09A0AJ-
10/MH1M09A0AJA-
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fs30umh-2
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30UMH-2 HIGH-SPEED SWITCHING USE FS30UMH-2 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. . 1.3 \ j j 3.6 1.0 ÎL 0.8 2.54 • 2.5V DRIVE • VDSS .100V • Integrated Fast Recovery Diode TYP.
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FS30UMH-2
O-220
fs30umh-2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIODE MODULES ! RM30DZ/CZ-24,-2H | HIGH VOLTAGE MEDIUM POWER GENERAL USE j _ j INSULATED TYPE RM30DZ/CZ-24,-2H Average forward current. 30A V rrm Repetitive peak reverse voltage 1200/1600V DOUBLE ARMS insulated Type UL Recognized
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RM30DZ/CZ-24
1200/1600V
E80276
E80271
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fs70sm-03
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET j FS70SM-03 | HIGH-SPEED SWITCHING USE FS70SM-03 • 10V DRIVE • VDSS . 30V • rDS ON (MAX) .14mi2 • ID . 70A
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FS70SM-03
14mi2
fs70sm-03
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p channel mosfet 10a 20v
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET j FS10SM-14A ! HIGH-SPEED SWITCHING USE FS10SM-14A • VOSS . 700V • ros O N (M A X ) . 1.3Q • Id . 10A
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FS10SM-14A
p channel mosfet 10a 20v
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Untitled
Abstract: No abstract text available
Text: blE J> m b E MT ÛE S Q O l T BT b 443 • n i T l I MITSUBISHI LSIs M5M44100AWJ,J,L,TP,RT-6L,-7L,-8L,-10L MITSUBISHI I M EM OR Y/ AS IC FAST PAGE MODE 4 1 9 4 3 0 4 -B IT (4 1 9 4 3 0 4 -W O R D BY 1-BIT)DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW)
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M5M44100AWJ
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FM75HA
Abstract: FM75 fm75h
Text: MITSUBISHI MOSFET MODULES F M 7 5 H A - 9 ,-1 0 j HIGH POWER SWITCHING USE _ INSULATED TYPE FM75HA-9, -10 . 75A • V DSS .450/500V
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FM75HA-9,
450/500V
E80276
E80271
FM75HA-9
FM75HA
FM75
fm75h
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dc-dc 48 to 5
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10SM-12 HIGH-SPEED SWITCHING USE FS10SM-12 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 S S <t>3.2 J n n 4.4 p 1.0 5.45 jbd 0.6 J bd| _4 Q w r Vd ss . 600V
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FS10SM-12
dc-dc 48 to 5
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30VSH-2 HIGH-SPEED SWITCHING USE FS30VSH-2 OUTLINE DRAWING I q J w e Q w r 2.5V DRIVE V dss .1 0 0 V . 30A
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FS30VSH-2
93mi2
O-220S
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Mosfet FDD
Abstract: mosfet 304 computer
Text: MITSUBISHI Neh POWER MOSFET FS16SM-10 I J HIGH-SPEED SWITCHING USE ] FS16SM-10 f ï • V dss . 500V • rDS ON (M AX) . 0.56Í2 • I d . 16A
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FS16SM-10
5710e
Mosfet FDD
mosfet 304 computer
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1N111
Abstract: No abstract text available
Text: j MITSUBISHI Nch POWER MOSFET | FS10AS-3 HIGH-SPEED SWITCHING USE FS10AS-3 OUTLINE DRAWING Dimensions in mm 6.5 5.0 ± 0 .2 J ° I X ED 0.9MAX. 0 .5 ± 0 .2 . | 2.3 •f / f i © ? ul © • 10V DRIVE
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FS10AS-3
100ns
1CH23
1N111
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PN channel MOSFET 10A
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS1OVS-14A HIGH-SPEED SWITCHING USE FS1 OVS-14A OUTLINE DRAWING I q J w e Q w r o- V d s s . 700V Id . 10A
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FS1OVS-14A
OVS-14A
O-22QS
57KH23
PN channel MOSFET 10A
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70x1
Abstract: MH1M08A0A-8
Text: MITSUBISHI LSIs M H 1M 08A 0A J - 6 , - 7 , - 8/ M H 1M 08A 0A J A - 6 ,- 7 ,- 8 FAST PAGE MODE 8388608- BIT 1048576- WORD BY 8 - BIT DYNAMIC RAM DESCRIPTION The M H 1 M 0 8 A 0 A J /J A is 1 0 4 8 5 7 6 -w ord x 8 - bit dynamic PIN CONFIGURATION(TOP VIEW) (Single side]
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MH1M08A0AJ-
8/MH1M08A0AJA-
8388608-BIT
1048576-WORD
MH1M08A0AJ-6
70x1
MH1M08A0A-8
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mitsubishi j 170
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FS70VS-03 J HIGH-SPEED SWITCHING USE FS70VS-03 • 10V DRIVE • VDSS .30 V • r o s ON (M AX ) .1 4 m f l
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FS70VS-03
mitsubishi j 170
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M5M51288BKJ
Abstract: M5M51288
Text: MITSUBISHI LSIS M5M51288BKP,KJ,J-15,-20,-25,-20L.-25L M5M51288BVP-20,-25,-20L,-25L 1048576-BIT 131Q72-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION The M5M51288BKP,KJ,J,VP are a family of 131072-word by 8-bit static RAMs, fabricated with the high performance CMOS silicon
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M5M51288BKP
M5M51288BVP-20
1048576-BIT
131Q72-WORD
131072-word
32-pin
M5M51288BKJ
M5M51288
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is M H 1 M 8 A A J - M H 1 M 8 A A J A 6 - , - 6 , 7 - , - 7 , 8 - , - 8 , 1 - 1 / FAST PAGE MODE 1048576- WORD BY 8 - BIT DYNAMIC RAM DESCRIPTION The M H 1 M 0 8 A 0 A J , J A is 1 0 4 8 5 7 6 -w ord x 8 - bit dynamic PIN CONFIGURATION TOP VIEW
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MH1M08A0AJ
10/MH1M08A0AJA-
1048576-WORD
MH1M08A0AJ-
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M H 2 M 3 2 E J , S E J - 6 ,-7 ,-8 , - 1 0 FAST PAGE MODE 2097152-WORD BY 32-BIT DYNAMIC RAM DESCRIPTION The M H 2M 32E J, SEJ is 2 0 9 7 1 5 2 word x 32bit dynamic RAM. This consists of sixteen industry standard 1M x 4 dynamic RAMs in SOJ.
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2097152-WORD
32-BIT
32bit
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10SM-12 HIGH-SPEED SWITCHING USE FS10SM-12 OUTLINE DRAWING Dimensions in mm 4.5 -J- 0.6 ! til ! 1. 2 1 A • Vdss . 600V • rDS ON (MAX) . 0 .94Q
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FS10SM-12
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m 51903l
Abstract: M51903
Text: MITSUBISHI ELEK -CUNEAR} flO dF | bEMTflSb OGCmfc.1 fl ,|~j M IT S U B IS H I L IN E A R IC s LINEAR 6249828 MITSUBISHI 80C 0 9 1 6 1 D ' T-52-13-07 L E D LIN EA R L E V E L INDICATOR DESCRIPTION The M51903L Is a semiconductor Integrated circuit consist
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T-52-13-07
M51903L
51903L
210mV
m 51903l
M51903
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS5VS-9 HIGH-SPEED SWITCHING USE FS5VS-9 OUTLINE DRAWING -4- Dimensions in mm 10.5MAX. \ 4.5 13 \ a 5 id n 'o > y -c s '* inj«? _• I CO Jl j PTTi / \ 1I - 4 s? M 0.5^ - 'us. j 2.6 ± 0 .4 ° .w J GATE DRAIN SOURCE DRAIN • V d s s .
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O-220S
71C-12
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