Chilisin Electronics
Abstract: CHILISIN in 4436 9333 731
Text: T Cores T Cores Application z z z z z z 2 Shapes Mn-Zn Cores Current transformer. EMI-suppression in power lines. EMI-suppression in mains filters. Inductive delay lines. Power inductors. Power transformers. Wideband transformers. T 4 x 2 x T OD x ID x ID
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31x19x13
31x19x16
QS9000
Chilisin Electronics
CHILISIN
in 4436
9333 731
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Untitled
Abstract: No abstract text available
Text: IRFB7430PBF Applications l l l l l l l l l TO-220AB Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches
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IRFB7430PBF
O-220AB
O-22VDS
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Untitled
Abstract: No abstract text available
Text: PD - 97782A StrongIRFET IRFB7430PbF Applications l l l l l l l l l HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies
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7782A
IRFB7430PbF
O-220AB
O-220
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Untitled
Abstract: No abstract text available
Text: PD - 97777 StrongIRFET IRFP7430PbF Applications l l l l l l l l l HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies
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IRFP7430PbF
O-247Aes)
TD-020Dâ
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IRFB7430
Abstract: IRFB7430PBF
Text: PD - 97782A StrongIRFET IRFB7430PbF Applications l l l l l l l l l HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies
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7782A
IRFB7430PbF
O-220AB
IRFB7430PbF
JESD47F
IRFB7430
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IRFP7430
Abstract: IRFP7430PBF BLDC motor drive irfp7
Text: PD - 97777 StrongIRFET IRFP7430PbF Applications l l l l l l l l l HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies
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IRFP7430PbF
O-247AC
JESD47F
TD-020D)
IRFP7430
IRFP7430PBF
BLDC motor drive
irfp7
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Untitled
Abstract: No abstract text available
Text: AUIRFB8409 AUIRFS8409 AUIRFSL8409 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant
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AUIRFB8409
AUIRFS8409
AUIRFSL8409
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Untitled
Abstract: No abstract text available
Text: StrongIRFETTM IRFB7430PbF Applications l l l l l l l l l HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies
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IRFB7430PbF
O-220
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QS5U23
Abstract: No abstract text available
Text: SPICE PARAMETER QS5U23 by ROHM TR Div. * QS5U23 PMOSFET model * Date: 2006/09/08 * This model includes a diode between drain and source. *D G S .SUBCKT QS5U23 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6 + W=1
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QS5U23
QS5U23
0000E-6
581E-6
000E-3
0000E6
00E-12
201E-12
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QS5U21
Abstract: No abstract text available
Text: SPICE PARAMETER QS5U21 by ROHM TR Div. * QS5U21 PMOSFET model * Date: 2006/09/08 * This model includes a diode between drain and source. *D G S .SUBCKT QS5U21 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6 + W=1
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QS5U21
QS5U21
0000E-6
581E-6
000E-3
0000E6
00E-12
201E-12
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QS5U27
Abstract: No abstract text available
Text: SPICE PARAMETER QS5U27 by ROHM TR Div. * QS5U27 PMOSFET model * Date: 2006/09/08 * This model includes a diode between drain and source. *D G S .SUBCKT QS5U27 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6 + W=1
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QS5U27
QS5U27
0000E-6
581E-6
000E-3
0000E6
00E-12
201E-12
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388 transistor
Abstract: 1124 transistor schottky model spice QS5U26
Text: SPICE PARAMETER QS5U26 by ROHM TR Div. * QS5U26 PMOSFET model * Date: 2006/09/08 * This model includes a diode between drain and source. *D G S .SUBCKT QS5U26 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6 + W=1
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QS5U26
QS5U26
0000E-6
581E-6
000E-3
0000E6
00E-12
201E-12
388 transistor
1124
transistor schottky model spice
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Untitled
Abstract: No abstract text available
Text: StrongIRFETTM IRFP7430PbF Applications l l l l l l l l l HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies
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IRFP7430PbF
O-247AC
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Untitled
Abstract: No abstract text available
Text: StrongIRFET IRFS7430PbF IRFSL7430PbF HEXFET Power MOSFET Applications l Brushed motor drive applications l BLDC motor drive applications l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies
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IRFS7430PbF
IRFSL7430PbF
O-262
IRFS7430TRLPbF
1452mJ
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sprague 53D
Abstract: ge 4110 53D101F 53D101
Text: Type 53D Vishay Sprague Aluminum Capacitors + 85°C, Tubular, Axial Lead, General Purpose FEATURES • General purpose capacitor • Rugged construction • Largest CV ratings in axial leaded capacitor Life Validation Test: 1000 hours at + 85°C: ∆ CAP ≤ 15%
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21-Sep-00
sprague 53D
ge 4110
53D101F
53D101
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Untitled
Abstract: No abstract text available
Text: International IG R Rectifier PD - 9.1455A IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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IRG4BC40S
TQ-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 9 .1 4 5 6 D International I R Rectifier IRG4BC40U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • U ltraFast: O p tim ize d for high o perating VcES = 600V fre q u e n c ie s 8 -4 0 k H z in hard sw itching, > 2 0 0
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IRG4BC40U
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Q405
Abstract: vqe 24 d q405 transistor vqe 23 IRGBC26 TO220AB IGBT t303 3i03 a y8e
Text: INTERNATIONAL RECTIFIER EbE D 4055455 00105=11 7 • Data Sheet No. PD-9.669 T-3Ì-03 International Usi Rectifier INSULATED GATE BIPOLAR TRANSISTOR IRGBCS6 600V, 19A FEATURES 600V, 19A, TO-220AB IGBT International Rectifier’s IR G series o f Insulated Gate
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Q01QS11
O-220AB
Q405
vqe 24 d
q405 transistor
vqe 23
IRGBC26
TO220AB IGBT
t303
3i03
a y8e
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors PHP8N50E, PHB8N50E, PHW8N50E Avalanche energy rated_ SYMBOL FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics
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PHP8N50E,
PHB8N50E,
PHW8N50E
PHP8N50E
PHW8N50E
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HRM2H-SDC24V
Abstract: relay hrm2h dc24v dc9v HRM2H-S-DC48V HRM2H-S-DC24V hrm2-s-dc24v HRM2H-S-DC5V relay DC9V DC24V DC48V
Text: HRM2 H Relay - kinds of single relays , power relays , automotive relays , telecom rel. Page 1 of 4 HRM2(H) Relay 1.COIL DATA 3 VDC to 48 VDC Refer to Table 1 Refer to Table 1 Refer to Table 1 1-1 .Nominal Voltage 1-2.Coil Resistance 1-3.Operate Voltage
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240VAC
30VDC
240VAD
VDC/250
250VAC
HRM2H-SDC24V
relay hrm2h dc24v
dc9v
HRM2H-S-DC48V
HRM2H-S-DC24V
hrm2-s-dc24v
HRM2H-S-DC5V
relay DC9V
DC24V
DC48V
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Untitled
Abstract: No abstract text available
Text: Miniature 1.0" x 2.0" x 0.40” Wide Input Voltage Range (9-I8Vdc, 18-36Vdc, 36-72Vdc) LWA15 SERIES Regulated DC/DC Converters 15 Watt FEATURES: •U L and CE approved ^ ^ ' nP r Ri:nSeT u / • - 4 0 ° C to +71°C Operating 1 emp. Range •L ow Profile Package (1.00” \ 2.00” x 0.375”)
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18-36Vdc,
36-72Vdc)
LWA15
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Untitled
Abstract: No abstract text available
Text: Coaxial Transmission Line Technical Data Figure 1 - Variation of Attenuation with Ambient Temperature Figure 2 - Effect of Load VSW R on Transmission Loss V S W R at T erm in ation Attenuation Effect of Connector on Transmission Line Loss The attenuation versus frequency characteristics of
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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Untitled
Abstract: No abstract text available
Text: Type 53D VISHAY Vishay Sprague ▼ Aluminum Capacitors + 85 C, Tubular, Axial Lead, G eneral Purpose FEATURES • General purpose capacitor • Rugged construction • Largest CV ratings in axial leaded capacitor PERFORMANCE C HARACTERISTICS Life Validation Test: 1000 hours at + 85°C: A CAP < 15%
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53D282G050HL6
53D382G050JL6
53D502G050JP6
53D102G063GJ6
53D222G063HL6
53D351F200JL6
53D461F200JP6
53D560F250GE6
53D101F250GJ6
53D131F250HJ6
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