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    MJDI22

    Abstract: No abstract text available
    Text: DPAK DEVICES continued Bipolar Power Transistors Device NPN PNP MJD340 MJD47 MJD350 MJD31 MJD31C MJD148 MJD6O39 W MJD243 MJD200 MJD41C MJD44H11 MJDI22 W MJD30S5 MJD44E3 (1) VCEO(sus) Volts Min Min/Max Am ps 0.5 300 250 350 400 400 100 40 100 45 80 100 25


    OCR Scan     		PDF MJD340 MJD47 MJD50 MJD13003 MJD350 MJD5731 1k/12k MJD31 MJD31C MJDI22

    JE3055

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS MJD3055 INC 42E D B 7^4142 000=1031 1 OSÍ1GK NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER. LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • « • • • Lead Formed for Surface Mount Applications No Suffix


    OCR Scan     		PDF MJD3055 JE3055 500mA 300/tS, MJD30S5 G00TD32 T-33-Ã JE3055